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NXP Semiconductors N.V.
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Part No. |
BUK652R1-30C
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OCR Text |
...te-drain charge i d =25a; v ds =24v; v gs = 10 v; see figure 17 ; see figure 18 -45-nc table 1. quick reference data ?continued symbol p...15a; t j =25c; see figure 14 -11.113m ? v gs =4.5v; i d =25a; t j =25c; see figure 13 - 2.65 3.5 m... |
Description |
N-channel TrenchMOS intermediate level FET 100 A, 30 V, 0.0021 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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File Size |
185.35K /
16 Page |
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