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IXYS, Corp.
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Part No. |
MCK500-14IO1 MDC500-14IO1
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OCR Text |
...te current (non-repetitive) 4) 300 a/s v rgm peak reverse gate voltage 5 v p g(av) mean forward gate power 4 w p gm peak forward gate power...gd gate controlled turn-on delay time - 0.6 1.5 t gt turn-on time - 1.2 2.5 i fg = 2 a, t r = 0.5 ... |
Description |
1294 A, 1400 V, SCR MODULE-7 1294 A, 1400 V, SCR MODULE-5
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File Size |
436.23K /
11 Page |
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it Online |
Download Datasheet |
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Jewel Hill Electronic Co., Ltd.
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Part No. |
NUS5530MNR2G
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OCR Text |
... 5. pulse test: pulse width 300 s, duty cycle 2%. 6. guaranteed by design, not subject to production testing.
nus5530mn http:/...gd q gs i d = ? 3.9 a t j = 25 c q gd /q gs = 3.0 figure 8. diode forward voltage versus curren... |
Description |
Integrated Power MOSFET with PNP Low VCE(sat) Switching Transistor 3.9 A, 20 V, 0.083 ohm, P-CHANNEL, Si, POWER, MOSFET
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File Size |
156.21K /
9 Page |
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it Online |
Download Datasheet |
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Kersemi Electronic Co., Ltd.
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Part No. |
FQPF10N60C FQP10N60C
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OCR Text |
... 1/8 " from case for 5 seconds 300 c symbol parameter fqp10n60c fqpf10n60c units r jc thermal resistance, junction-to-case 0.8 2.5 c / w r...gd gate-drain charge -- 18.5 -- nc drain-source diode characteristics and maximum ratings i s maximu... |
Description |
600V N-Channel MOSFET
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File Size |
1,016.70K /
9 Page |
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it Online |
Download Datasheet |
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Kersemi Electronic Co., Ltd.
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Part No. |
FQPF12N60C FQP12N60C
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OCR Text |
... 1/8 " from case for 5 seconds 300 c symbol parameter fqp12n60c fqpf12n60c units r jc thermal resistance, junction-to-case 0.56 2.43 c / w...gd gate-drain charge -- 21 nc drain-source diode characteristics and maximum ratings i s maximum con... |
Description |
600V N-Channel MOSFET
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File Size |
1,064.41K /
9 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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