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| Part No. |
HYS72T128000HP
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| OCR Text |
...6m 72 module organization, and 512m 8, 512m 4 chip organization ? registered dimm parity bit for address and control bus ? 512 mb, 1 gb, and 2 gb module built with 512 mbit ddr2 sdrams in p-tfbga-60 chipsize packages. ? standard double... |
| Description |
240-Pin Registered DDR2 SDRAM Modules
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| File Size |
1,465.47K /
65 Page |
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List of Unclassifed Man...
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| Part No. |
KVR13S9S8-4
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| OCR Text |
512m x 64-bit pc3-10600 cl9 204-pin sodimm description this document describes valueram's 512m x 64-bit (4gb) ddr3-1333 cl9 sdram (synchronous dram), 1rx8 memory module, based on eight 512m x 8-bit ddr3-1333 fbga compo- nents. the spd is pr... |
| Description |
4GB 1Rx8 512M x 64-Bit PC3-10600
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| File Size |
205.71K /
2 Page |
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it Online |
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List of Unclassifed Man...
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| Part No. |
KVR13S9S8K2-8
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| OCR Text |
512m x 64-bit x 2 pcs.) pc3-10600 cl9 204-pin sodimm kit description valueram's kvr13s9s8k2/8 is a kit of two 512m x 64-bit (4gb) ddr3-1333 cl9 sdram (synchronous dram), 1rx8 memory modules, based on eight 512m x 8-bit fbga compo- nents per... |
| Description |
8GB (4GB 1Rx8 512M x 64-Bit x 2 pcs.)
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| File Size |
205.75K /
2 Page |
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it Online |
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List of Unclassifed Man...
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| Part No. |
HX316C10F-4
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| OCR Text |
512m x 64-bit (4gb) ddr3-1600 cl10 sdram (synchronous dram) 1rx8 memory module, based on eight 512m x 8-bit ddr3 fbga components. this module has been tested to run at ddr3-1600 at a low latency timing of 10-10-10 at 1.5v. additional timing... |
| Description |
4GB 512M x 64-Bit DDR3-1600
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| File Size |
422.66K /
2 Page |
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it Online |
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Eon Silicon Solution In...
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| Part No. |
EN27LN4G08
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| OCR Text |
...zation - memory cell array : (512m + 16m) x 8bit - data register : (2k + 64) x 8bit ? automatic program and erase - page program :...bit/512 byte - endurance: 100k program/erase cycles - data retention: 10 years ? command reg... |
| Description |
4 Gigabit (512M x 8), 3.3 V NAND Flash Memory
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| File Size |
3,090.18K /
54 Page |
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it Online |
Download Datasheet |
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Samsung Electronic
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| Part No. |
KBE00F005A-D411
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| OCR Text |
...e multi-chip package memory 512m bit(64mx8) nand flash*2 / 256m bit (2mx32x4ban ks) mobile sdram*2 revision history the attached datasheets are prepared and approved by samsung el ectronics. samsung electronics co., ltd. reserve th... |
| Description |
512Mb NAND*2 256Mb Mobile SDRAM*2
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| File Size |
1,354.35K /
87 Page |
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it Online |
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List of Unclassifed Man...
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| Part No. |
HX316C10FBK2-8
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| OCR Text |
512m x 64-bit (4gb) ddr3-1600 cl10 sdram (synchronous dram) 1rx8 memory modules, based on eight 512m x 8-bit ddr3 fbga components per module. total kit capacity is 8gb. each module kit has been tested to run at ddr3-1600 at a low latency ti... |
| Description |
DDR3-1600 CL10 240-Pin DIMM Kit
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| File Size |
421.56K /
2 Page |
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it Online |
Download Datasheet |
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List of Unclassifed Man...
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| Part No. |
HX316C10FK2-8
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| OCR Text |
512m x 64-bit (4gb) ddr3-1600 cl10 sdram (synchronous dram) 1rx8 memory modules, based on eight 512m x 8-bit ddr3 fbga components per module. total kit capacity is 8gb. each module kit has been tested to run at ddr3-1600 at a low latency ti... |
| Description |
DDR3-1600 CL10 240-Pin DIMM Kit
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| File Size |
422.92K /
2 Page |
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it Online |
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SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
KBE00F005A-D411
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| OCR Text |
...e multi-chip package memory 512m bit(64mx8) nand flash*2 / 256m bit (2mx32x4ban ks) mobile sdram*2 revision history the attached datasheets are prepared and approved by samsung el ectronics. samsung electronics co., ltd. reserve th... |
| Description |
512Mb NAND*2 256Mb Mobile SDRAM*2
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| File Size |
1,363.49K /
87 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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