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  bipolar transistor Datasheet PDF File

For bipolar transistor Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | <4> | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    INFINEON[Infineon Technologies AG]
Part No. BFS17W BFS17W.
Description RF-bipolar - For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA
RF-bipolar NPN Type transistors with transition frequency from 1 to 6 GHz
NPN Silicon RF transistor

File Size 44.03K  /  5 Page

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    BFP620E7764

Infineon Technologies AG
Part No. BFP620E7764
Description RF-bipolar - NPN Silicon Germanium RF transistor, high gain low noise RF transistor in SOT343 Package
C BAND, Si, NPN, RF SMALL SIGNAL transistor

File Size 184.23K  /  7 Page

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    IRG7PH35U-EP IRG7PH35UPBF IRG7PH35UPBF-15

International Rectifier
Part No. IRG7PH35U-EP IRG7PH35UPBF IRG7PH35UPBF-15
Description 55 A, 1200 V, N-CHANNEL IGBT, TO-247AD
INSULATED GATE bipolar transistor
   INSULATED GATE bipolar transistor

File Size 367.67K  /  10 Page

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    IRG4PH40KDPBF IRG4PH40KDPBF-15

International Rectifier
Part No. IRG4PH40KDPBF IRG4PH40KDPBF-15
Description INSULATED GATE bipolar transistor WITH ULTRAFAST SOFT RECOVERY DIODE
INSUALATED GATE bipolar transistor WITH YLTRAFAST SOFT RECOVERY DIODE

File Size 746.83K  /  11 Page

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    STE07DE220 E07DE220

ST Microelectronics
STMicroelectronics
Part No. STE07DE220 E07DE220
Description Hybrid emitter switched bipolar transistor ESBT 2200 V - 7 A - 0.07 Ohm power module
Hybrid emitter switched bipolar transistor ESBT 2200V - 7A - 0.07з power module
Hybrid emitter switched bipolar transistor ESBT 2200V - 7A - 0.07搂? power module
Hybrid emitter switched bipolar transistor ESBT 2200V - 7A - 0.07 power module

File Size 94.73K  /  7 Page

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    Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. AT-42036 AT-42036-TR1 AT-42036-BLK
Description AT-42036 · General purpose transistor
Agilent AT-42036 Up to 6 GHz Medium Power Silicon bipolar transistor
transistor | BJT | NPN | 12V V(BR)CEO | 80MA I(C) | MICRO-X

File Size 69.63K  /  6 Page

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    ST Microelectronics, Inc.
STMICROELECTRONICS[STMicroelectronics]
Part No. STE70IE120
Description Monolithic Emitter Switched bipolar transistor ESBT? 1200 V - 70 A - 0.014 Ω Power Module
Monolithic Emitter Switched bipolar transistor ESBT 1200V 70A 0.014Ohm Power Module
Monolithic Emitter Switched bipolar transistor ESBT㈢ 1200 V - 70 A - 0.014 ヘ Power Module

File Size 127.05K  /  7 Page

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    IRG4BC29F IRG4BC30F IRG4BC30

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRG4BC29F IRG4BC30F IRG4BC30
Description 600V Fast 1-8 kHz Discrete IGBT in a TO-220AB package
INSULATED GATE bipolar transistor WITH ULTRAFAST SOFT RECOVERY DIODE
INSULATED GATE bipolar transistor(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A) 绝缘栅双极晶体管(VCES和\u003d 600V电压的Vce(on)典\u003d 1.59V,@和VGE \u003d 15V的,集成电路\u003d 17A条)

File Size 164.74K  /  8 Page

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    IRG4PH40U

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRG4PH40U
Description 41 A, 1200 V, N-CHANNEL IGBT, TO-247AC
INSULATED GATE bipolar transistor WITH ULTRAFAST SOFT RECOVERY DIODE
INSULATED GATE bipolar transistor(Vces=1200V, Vce(on)typ.=2.43V, @Vge=15V, Ic=21A) 绝缘栅双极晶体管(VCES和\u003d 1200伏,的Vce(on)典\u003d 2.43V,@和VGE \u003d 15V的,集成电路\u003d 21A条)
INSULATED GATE bipolar transistor(Vces=1200V Vce(on)typ.=2.43V @Vge=15V Ic=21A)
1200V UltraFast 5-40 kHz Discrete IGBT in a TO-247AC package

File Size 160.52K  /  8 Page

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    TOSHIBA[Toshiba Semiconductor]
Part No. GT15M321
Description INSULATED GATE bipolar transistor SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS
TOSHIBA INSULATED GATE bipolar transistor SILICON N CHANNEL IGBT

File Size 257.03K  /  6 Page

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