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				TY Semiconductor Co., Ltd
Part No.	2SK3640
OCR Text	...0.25 -0.1 1.50 +0.28 -0.1 0.127 max 3 .8 0 to-252 unit: mm 1. gate 2. drain 3. source features low on-state resistance r ds(on)1 =21m max. (v gs =10v,i d =9a) r ds(on)2 =40m max. (v gs =4.5v,i d =9a) low ciss: ciss = 570 pf typ. built-in ga...
Description	Low on-state resistance RDS(on)1 = 21 m max. Built-in gate protection diode
File Size	196.44K / 2 Page	View it Online	Download Datasheet

				Ecliptek, Corp.
Part No.	EC1145ETTTS-4.000M
OCR Text	...orient a tion 7.620 0.203 13.2 max 20.8 max 15.240 0.203 1 7 8 14 dia 0.457 0.100 (x4) 5.08 min 5.08 max 0.9 max output disable (high imped ance st a te) output w a veform & timing dia gram v oh v ol 80% or 2.4v dc 50% or 1.4v dc 20%...
Description	OSCILLATORS 50PPM -40 85 5.0V 4 4.000MHZ TS CMOS FULL 14PIN DIP CRYSTAL OSCILLATOR, CLOCK, 4 MHz, HCMOS/TTL OUTPUT
File Size	185.30K / 7 Page	View it Online	Download Datasheet

				TOSHIBA
Part No.	TPHR9003NL
OCR Text	...akage current: i dss = 10 a (max) (v ds = 30 v) (5) enhancement mode: v th = 1.3 to 2.3 v (v ds = 10 v, i d = 1.0 ma) 3. 3. 3. 3. packaging and internal circuit packaging and internal circuit packaging and internal circuit packag...
Description	Power MOSFET (N-ch single VDSS≤30V)
File Size	229.59K / 9 Page	View it Online	Download Datasheet

				TOSHIBA
Part No.	TPCA8059-H
OCR Text	...akage current: i dss = 10 a (max) (v ds = 30 v) (6) enhancement mode: v th = 1.3 to 2.3 v (v ds = 10 v, i d = 0.5 ma) 3. 3. 3. 3. packaging and internal circuit packaging and internal circuit packaging and internal circuit packag...
Description	Power MOSFET (N-ch single VDSS≤30V)
File Size	230.10K / 9 Page	View it Online	Download Datasheet

				ZETTLER electronics GmbH HITACHI[Hitachi Semiconductor]
Part No.	2SA1188 2SA1189 2SA1189E 2SA1189D
OCR Text	... I CBO I EBO hFE* 1 2SA1189 Max -- -- -- -0.1 -0.1 800 Min Typ Max -- -- -- -0.1 -0.1 800 Unit V V V A A Test conditions I C = -10 A, IE = 0 I C = -1 mA, RBE = I E = -10 A, IC = 0 VCB = -70 V, IE = 0 VEB = -2 V, IC = 0 VCE = -12 V, I C...
Description	5-Pin µP Supervisory Circuits with Watchdog and Manual Reset 5个引amp;#181;带看门狗和手动复位的P监控电路 TRANSISTOR \| BJT \| PNP \| 120V V(BR)CEO \| 100MA I(C) \| TO-92 Silicon PNP Epitaxial
File Size	23.47K / 5 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SA1190 2SA1191
OCR Text	... I CBO I EBO hFE* 1 2SA1191 Max -- -- -- -0.1 -0.1 800 Min Typ Max -- -- -- -0.1 -0.1 800 Unit V V V A A Test conditions I C = -10 A, IE = 0 I C = -1 mA, RBE = I E = -10 A, IC = 0 VCB = -70 V, IE = 0 VEB = -2 V, IC = 0 VCE = -12 V, I C...
Description	Silicon PNP Epitaxial
File Size	44.42K / 10 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SA1193 2SA1193K
OCR Text	...- Typ -- -- -- -- -- -- 0.3 0.9 Max -- -1.0 -1.0 -- -1.5 -2.0 -- -- V V s s I C = -250 mA I B1 = -IB2 = -0.5 mA Unit V A A Test conditions I C = -1 mA, RBE = VCB = -60 V, IE = 0 VEB = -7 V, IC = 0 VCE = -3 V, IC = -250 mA*1 I C = -250 mA, ...
Description	Silicon PNP Epitaxial/ Darlington Silicon PNP Epitaxial, Darlington
File Size	33.83K / 6 Page	View it Online	Download Datasheet

				Ecliptek, Corp.
Part No.	EC1125HSET-1.544M
OCR Text	...7.620 0.203 7.620 0.203 13.2 max 13.2 max 1 4 8 5 dia 0.457 0.1 (x4) 5.08 min 5.6 max 0.8 0.1 (x3) marking orient a tion output w a veform v oh v ol 80% or 2.4v dc 50% or 1.4v dc 20% or 0.4v dc f all time rise time t w t duty cycle...
Description	OSCILLATORS 25PPM -40 85 5.0V 4 1.544MHZ NC CMOS HALF 8PIN DIP CRYSTAL OSCILLATOR, CLOCK, 1.544 MHz, HCMOS/TTL OUTPUT
File Size	188.05K / 7 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	TK72E08N1
OCR Text	...akage current: i dss = 10 a (max) (v ds = 80 v) (3) enhancement mode: v th = 2.0 to 4.0 v (v ds = 10 v, i d = 1.0 ma) 3. 3. 3. 3. packaging and internal circuit packaging and internal circuit packaging and internal circuit packag...
Description	Switching Voltage Regulators
File Size	247.40K / 9 Page	View it Online	Download Datasheet

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