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For mosfets Found Datasheets File :: 20130    Search Time::0.86ms    
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    ALD[Advanced Linear Devices]
Part No. ALD114935SA ALD114835 ALD114835PC ALD114835SC ALD114935 ALD114935PA
OCR Text ... monolithic quad/dual N-Channel mosfets matched at the factory using ALD's proven EPAD CMOS technology. These devices are intended for low voltage, small signal applications. They are excellent functional replacements for normally-closed re...
Description QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD MATCHED PAIR MOSFET ARRAYS

File Size 33.92K  /  2 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. AN-53
OCR Text ... capacitors, and external power mosfets. This regulator forms a step down DC-DC converter that can deliver up to 14.5A of continuous load current at voltages ranging from 1.3V to 3.5V. A specific application circuit, design considerations, ...
Description Implementing an RC5051 DC-DC Converter on Pentium II Motherboards

File Size 140.19K  /  20 Page

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    VISAY[Vishay Siliconix]
Part No. AN101
OCR Text ...Ts) and Insulated Gate FETs (or mosfets, metal-oxide- semiconductor field-effect transistors). Junction FETs are inherently depletion-mode devices, and are available in both n- and p-channel configurations. mosfets are available in both enh...
Description mosfets

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    VISAY[Vishay Siliconix]
Part No. AN709
OCR Text mosfets Wharton McDaniel INTRODUCTION The Si9976DY is a fully integrated half-bridge driver IC which was designed to work with the LITTLE FOOT family of power MOSFET products in 20- to 40-V systems. The Si9976DY provides the gate drive...
Description Designing with the Si9976DY N-Channel Half-Bridge Driver and LITTLE FOOT Dual mosfets

File Size 86.52K  /  8 Page

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    CMKDM8005

Central Semiconductor Corp
Part No. CMKDM8005
OCR Text mosfets maximum ratings: (t a =25c) symbol units drain-source voltage v ds 20 v gate-source voltage v gs 8.0 v continuous drain current (steady state) i d 650 ma continuous source current (body diode) i s 250 ma maximum pulsed...
Description SURFACE MOUNT DUAL P-CHANNEL ENHANCEMENT-MODE SILICON mosfets

File Size 478.36K  /  2 Page

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    IRF3710 IRF3710PBF

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF3710 IRF3710PBF
OCR Text ...ption Advanced HEXFET(R) Power mosfets from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device ...
Description Power MOSFET(Vdss=100V, Rds(on)=23mohm, Id=57A) 功率MOSFET(减振钢板基本\u003d 100V的,的Rds(on)\u003d 23mohm,身份证\u003d 57A条)
Power MOSFET(Vdss=100V Rds(on)=23mohm Id=57A)
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

File Size 92.57K  /  8 Page

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    Vishay Intertechnology, Inc.
Part No. SIC521A
OCR Text ...t per phase. the internal power mosfets utilize vishays state-of-the-art gen iv trench fet technology that delivers industry benchmark performan ce to significantly reduce switching and conduction losses. the sic521 and sic521a incorpora...
Description 25A VRPower庐 Integrated Power Stage Solutions Optimized

File Size 328.85K  /  15 Page

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    Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
Part No. AN804
OCR Text mosfets, the Best Choice for High-Side Switching Historically, p-channel FETs were not considered as useful as their n-channel counterparts. The higher resistivity of p-type silicon, resulting from its lower carrier mobility, put it at a...
Description P-Channel mosfets, the Best Choice for High-Side Switching

File Size 39.88K  /  4 Page

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    MAX17552

Maxim Integrated Products
Part No. MAX17552
OCR Text mosfets operates over a 4v to 60v input voltage range. the converter can deliver output current up to 100ma at output voltages of 0.8v to 0.9 x v in . the output voltage is accurate to within 1.75% over the -40c to +125c temperature ran...
Description Synchronous Step-Down DC-DC Converter

File Size 1,306.82K  /  20 Page

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Part No. JANSG2N7469U2
OCR Text ...provides high performance power mosfets for space applications. these devices have been characterized for single event effects (see) with useful performance up to an let of 80 (mev/(mg/cm 2 )). the combination of low r ds(on) and low ga...
Description 75 A, 100 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET

File Size 127.64K  /  8 Page

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