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  photosensitive Datasheet PDF File

For photosensitive Found Datasheets File :: 496    Search Time::2.141ms    
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    S4282-51

Hamamatsu Corporation
Part No. S4282-51
OCR Text ...27 (SPECIFIED AT THE LEAD ROOT) photosensitive SURFACE 10 0.7 0.15 0.25 -0.1 +0.15 Vout GND CATHODE (LED) Vcc Tolerance unless otherwise noted: 0.1, 2 Shaded area indicates burr. Values in parentheses are not guaranteed, but for...
Description Light modulation photo IC

File Size 123.57K  /  4 Page

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    S8551 S8552 S8553

Hamamatsu Corporation
Part No. S8551 S8552 S8553
OCR Text ....0 0.2 1.4 anode terminal mark photosensitive surface cap without window 0.5 max. lead 13.9 0.2 12.35 0.1 10.5 0.1 0.45 7.5 0.2 1.0 max. active area 5.8 5.8 anode terminal mark 0.5 lead photosensitive surface 16.5 0.2 15.0 0....
Description Photodiodes for VUV (Vacuum UV) detection

File Size 114.32K  /  2 Page

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    S9972-1007 S9972-1008 S9973-1007 S9973-1008 S997209

Hamamatsu Corporation
Part No. S9972-1007 S9972-1008 S9973-1007 S9973-1008 S997209
OCR Text ...48 1.1 0.3 1st pin index mark photosensitive surface 0.51 0.05 3.0 0.3 2.54 0.13 27.94 0.13 photosensitive surface 6 kmpda0205eb active area 24.576 40.64 0.41 112 24 13 10.05 0.25 2.976 1.1 0.3 1st pin index mark photosensitive su...
Description CCD area image sensor Front-illuminated FFT-CCD, high near IR sensitivity

File Size 451.14K  /  10 Page

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    BPW34SE9087 BPW34S BPW34 Q62702-P73 Q62702-P1602 Q62702-P1790

Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
Part No. BPW34SE9087 BPW34S BPW34 Q62702-P73 Q62702-P1602 Q62702-P1790
OCR Text ... 0.4 0 ... 5 5.08 mm spacing photosensitive area 2.65 mm x 2.65 mm GEO06643 3.5 3.0 0.6 0.4 2.2 1.9 BPW 34 Mae in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale q Spezie...
Description    Silicon PIN Photodiode
Silizium-PIN-Fotodiode NEU: in SMT und als Reverse Gullwing Silicon PIN Photodiode NEW: in SMT and as Reverse Gullwing

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    S6986

Hamamatsu Corporation
Part No. S6986
OCR Text ...r) (specified at the lead root) photosensitive surface vout gnd cathode (led) vcc 2.0 (depth 0.15 max.) 1.0 (depth 0.15 max.) 2.5 0.2 5.0 2.05 0.2 16.5 1.0 (0.8) (1.0) 1.27 1.27 1.27 10 ? 5 ? 0.7 0.15 10 ? 5 ? 0.25 +0.15 -0.1 0....
Description Light modulation photo IC

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    G6122ETCKIRD1036E13

Hamamatsu Corporation
Part No. G6122ETCKIRD1036E13
OCR Text ...nput) 0.7 0.4 20 75.2 3.3 0.2 photosensitive surface 45 40 20 26 26 (4 ) 3.2 depth 14.5 + m3 depth 5 (mounting threaded hole) active area g6122/-03, g6126, p4638, p4639, p4631/-02 kirda0009ee 2 infrared detector module with preamp...
Description Infrared detector module with preamp

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    S4111-35Q S4111-16Q S4111-16R S4111-46Q S4114-35Q S4114-46Q S4111

Hamamatsu Corporation
Part No. S4111-35Q S4111-16Q S4111-16R S4111-46Q S4114-35Q S4114-46Q S4111
OCR Text ...15.9 18 17 16 15 14 13 12 11 10 photosensitive SURFACE 0.5 0.2 S4111/S4114 series S4111-16R 22.86 0.3 18.8 CH 1 1.45 photosensitive SURFACE 0.5 0.2 ACTIVE AREA CH 16 15.9 18 17 16 15 14 13 12 11 10 7.49 0.2 7.87 0.3 ...
Description Si photodiode array 16, 35, 46 element Si photodiode array for UV to NIR

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    S3921-512Q S3921-256Q S3921-128Q S3921-1024Q

Hamamatsu Corporation
Part No. S3921-512Q S3921-256Q S3921-128Q S3921-1024Q
OCR Text ...8 x 2.5 5.0 0.2 31.75 photosensitive SURFACE 1.3 0.2* 31.75 photosensitive SURFACE 1.3 0.2* 3.0 0.51 2.54 25.4 10.16 0.25 0.51 2.54 25.4 * Optical distance from the outer surface of the quartz window to the ...
Description NMOS linear image sensor Voltage output type with current-integration readout circuit and impedance conversion circuit

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    S3902-256Q S3902-128Q S3902-512Q S3903-1024Q S3903-256Q S3903-512Q S3902 S3903

Hamamatsu Corporation
Part No. S3902-256Q S3902-128Q S3902-512Q S3903-1024Q S3903-256Q S3903-512Q S3902 S3903
OCR Text ...8 x 0.5 5.2 0.2 31.75 photosensitive SURFACE 1.3 0.2* 31.75 photosensitive SURFACE 1.3 0.2* 3.0 0.51 2.54 25.4 10.16 0.25 0.51 2.54 25.4 * Optical distance from the outer surface of the quartz window to the ...
Description NMOS linear image sensor Current output, high UV sensitivity, excellent linearity, low power consumption

File Size 222.54K  /  6 Page

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    G1962 G1963 G1961

HAMAMATSU[Hamamatsu Corporation]
Hamamatsu Photonics
Part No. G1962 G1963 G1961
OCR Text ... WINDOW 5.9 0.1 8.1 0.1 photosensitive SURFACE 0.45 LEAD photosensitive SURFACE 0.45 LEAD 2.4 14 5.08 0.2 2.54 0.2 CONNECTED TO CASE CONNECTED TO CASE KGPDA0005EA KGPDA0006EA GaP photodiode G1963 13.9 ...
Description    GaP photodiode

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Price & Availability of photosensitive
TTI

Part # Manufacturer Description Price BuyNow  Qty.
OPB941W51Z
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TT Electronics plc Optical Switches, Transmissive, Photo IC Output Photologic Slotted 10: USD6.21
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400: USD5.56
500: USD5.43
1000: USD5.32
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ILQ2
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4N49U
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VOM1271T
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4000: USD1.3
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