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  power self-refresh Datasheet PDF File

For power self-refresh Found Datasheets File :: 6924    Search Time::2.5ms    
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    MT48LC8M16A2 MT48LC8M16A2TG-6A

MICRON[Micron Technology]
Part No. MT48LC8M16A2 MT48LC8M16A2TG-6A
OCR Text ... Refresh Mode; standard and low power * LVTTL-compatible inputs and outputs * Single +3.3V 0.3V power supply * 64ms, 4,096-cycle refresh ...Self Refresh Standard * Operating Temperature Range Commercial (0oC to +70oC) NOTE: 1. Refer to Mic...
Description SYNCHRONOUS DRAM

File Size 37.23K  /  4 Page

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    V53C318165A V53C318165A50 V53C318165A60 V53C318165A70

MOSEL[Mosel Vitelic, Corp]
Part No. V53C318165A V53C318165A50 V53C318165A60 V53C318165A70
OCR Text ..., 70 ns s Dual CAS Inputs s Low power dissipation s Read-Modify-Write, RAS-Only Refresh, CAS-Before-RAS Refresh, Hidden Refresh, and Self Refresh. s Refresh Interval: 1024 cycles/16 ms s Available in 42-pin 400 mil SOJ and 50/44-pin 400 mil...
Description 3.3 VOLT 1M X 16 EDO PAGE MODE CMOS DYNAMIC RAM

File Size 266.08K  /  18 Page

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    EM658160 EM658160TS-33 EM658160TS-35 EM658160TS-4 EM658160TS-5 EM658160TS-6 EM658160TS-7 EM658160TS-8

ETRON[Etron Technology, Inc.]
ETRON[Etron Technology Inc.]
Part No. EM658160 EM658160TS-33 EM658160TS-35 EM658160TS-4 EM658160TS-5 EM658160TS-6 EM658160TS-7 EM658160TS-8
OCR Text ...les / 64ms * Precharge & active power down * power supplies: VDD = 3.3V 0.3V VDDQ = 2.5V 0.2V * Interface: SSTL_2 I/O Interface * Package:...self-timed row precharge that is initiated at the end of the burst sequence. The refresh functions, ...
Description 4M x 16 DDR Synchronous DRAM (SDRAM)

File Size 154.94K  /  26 Page

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    K4E160411D K4E160412D K4E170411D K4E170412D K4E16704112D K4E160411D-B K4E160412D-B K4E160411D-F K4E160412D-F K4E170411D-

SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4E160411D K4E160412D K4E170411D K4E170412D K4E16704112D K4E160411D-B K4E160412D-B K4E160411D-F K4E160412D-F K4E170411D-B K4E170411D-F K4E170412D-F K4E170412D-B
OCR Text ...row, so called Hyper Page Mode. power supply voltage (+5.0V or +3.3V), refresh cycle (2K Ref. or 4K Ref.), access time (-50 or -60), power c...self-refresh operation is available in L-version. This 4Mx4 EDO DRAM family is fabricated using Sams...
Description 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle.
4M x 4Bit CMOS Dynamic RAM with Extended Data Out Data Sheet
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle.
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle.
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle.

File Size 254.50K  /  21 Page

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    K4F160411D K4F160412D K4F170411D K4F170412D K4F160411D-B K4F160411D-F K4F160412D-B K4F160412D-F

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4F160411D K4F160412D K4F170411D K4F170412D K4F160411D-B K4F160411D-F K4F160412D-B K4F160412D-F
OCR Text ...mory cells within the same row. power supply voltage (+5.0V or +3.3V), refresh cycle (2K Ref. or 4K Ref.), access time (-50 or -60), power c...self-refresh operation is available in L-version. This 4Mx4 Fast Page Mode DRAM family is fabricated...
Description 4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle.
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle.
4M x 4Bit CMOS Dynamic RAM with Fast Page Mode

File Size 223.25K  /  20 Page

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    K4F151611 K4F151611D K4F151612D K4F171611D K4F171612D K4F151612D-J K4F151611D-T K4F151612D-T K4F171612D-J

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4F151611 K4F151611D K4F151612D K4F171611D K4F171612D K4F151612D-J K4F151611D-T K4F151612D-T K4F171612D-J
OCR Text ...mory cells within the same row. power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-50 or -60), power c...self-refresh operation is available in L-version. This 1Mx16 Fast Page Mode DRAM family is fabricate...
Description 1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 4K refresh cycle.
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 1K refresh cycle.
1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 1K refresh cycle.

File Size 525.70K  /  34 Page

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    KM416C4000B KM416C4100B KM416C4000BS-6 KM416C4000BS-5

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. KM416C4000B KM416C4100B KM416C4000BS-6 KM416C4000BS-5
OCR Text ...to realize high band-width, low power consumption and high reliability. FEATURES * Part Identification - KM416C4000B(5.0V, 8K Ref.) - KM...self refresh) RAS precharge time (C-B-R self refresh) CAS hold time (C-B-R self refresh) Symbol Min ...
Description 4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 8K refresh, 50ns
4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 8K refresh, 60ns

File Size 826.10K  /  35 Page

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    KM416C4000C KM416C4100C KM416C4000CS-5

SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. KM416C4000C KM416C4100C KM416C4000CS-5
OCR Text ...to realize high band-width, low power consumption and high reliability. FEATURES * Part Identification - KM416C4000C(5.0V, 8K Ref.) - KM...self refresh) RAS precharge time (C-B-R self refresh) CAS hold time (C-B-R self refresh) Symbol Min ...
Description 4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 8K refresh, 50ns

File Size 898.34K  /  35 Page

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    KM416C4004C KM416C4104C KM416C4004CS-5

SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. KM416C4004C KM416C4104C KM416C4004CS-5
OCR Text ...to realize high band-width, low power consumption and high reliability. FEATURES * Part Identification - KM416C4004C(5.0V, 8K Ref.) - KM...self refresh) RAS precharge time (C-B-R self refresh) CAS hold time (C-B-R self refresh) Symbol Min ...
Description 4M x 16Bit CMOS dynamic RAM with extended data out, 5V, 8K refresh, 50ns

File Size 943.13K  /  36 Page

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    HYNIX SEMICONDUCTOR INC
Part No. HYMP512U64CP8-S6
OCR Text ...dr2 sdrams) with 1.8v +/- 0.1v power supply ? all inputs and outputs are compatible with sstl_1.8 interface ?4 bank architecture ?posted c...self refresh supported ? partial array self refresh supported ? 8192 refresh cycles / 64ms ? serial ...
Description 128M X 64 DDR DRAM MODULE, 0.4 ns, ZMA240

File Size 571.57K  /  30 Page

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