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KA339 A1201 LS421 35V4X M6322 GJ03N70 5KP110C 330M35
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    MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. MH8S72BALD-6 B99028
OCR Text ...pplied.BA must be set with ACT ,PRE ,READ ,WRITE commands CKE0 Input /S0,2 /RAS,/CAS,/W Input Input A0-11 Input BA0-1 D...Action READ/WRITE ILLEGAL*2 MIT-DS-0316-0.0 MITSUBISHI ELECTRIC 11/May. /1999 7 MI...
Description From old datasheet system
603,979,776-BIT ( 8,388,608-WORD BY 72-BIT ) Synchronous DYNAMIC RAM

File Size 580.88K  /  40 Page

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    MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. MH8S64BALD-6 B99027
OCR Text ...pplied.BA must be set with ACT ,PRE ,READ ,WRITE commands CKE0 Input /S0,2 /RAS,/CAS,/W Input Input A0-11 Input BA0-1 ...Action READ/WRITE ILLEGAL*2 MIT-DS-0317-0.0 MITSUBISHI ELECTRIC 11/May. /1999 7 MI...
Description From old datasheet system
536,870,912-BIT ( 8,388,608-WORD BY 64-BIT ) Synchronous DYNAMIC RAM

File Size 569.90K  /  40 Page

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    MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. MH32S72QJA-8 MH32S72QJA-7
OCR Text ...applied.BA must be set with ACT,PRE,READ,WRITE commands CKE0 Input /S0,2 /RAS,/CAS,/W Input Input A0-11 Input BA0-1 ...Action READ/WRITE ILLEGAL*2 ACT Bank Active,Latch RA PRE/PREA REFA MRS DESEL NOP TBST READ/READA ...
Description 2415919104-BIT ( 33554432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM

File Size 951.21K  /  56 Page

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    MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. MH32S72PHB-6
OCR Text ...pplied.BA must be set with ACT ,PRE ,READ ,WRITE commands CKE0,1 Input /S0-3 /RAS,/CAS,/W Input Input A0-11 Input BA0-1...Action READ/WRITE ILLEGAL*2 MIT-DS-0318-0.0 MITSUBISHI ELECTRIC 12/May. /1999 7 MI...
Description 2,415,919,104-BIT ( 33,554,432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM

File Size 579.00K  /  40 Page

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    M2V64S50ETP-I

Elpida Memory
Part No. M2V64S50ETP-I
OCR Text .... ba0,1 must be set with act, pre, read, write commands. input ba0,1 a0-11 specify the row / column address in conjunction with ba0,1. t...action idle h x x x x desel nop lhhhx nop nop l h h l x tbst illegal*2 l h l x ba, ca, a10 read / wr...
Description 64M Single Data Rate Synchronous DRAM WTR (Wide Temperature Range)

File Size 722.70K  /  49 Page

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    MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. MH32S64PHB-6 B99033
OCR Text ...pplied.BA must be set with ACT ,PRE ,READ ,WRITE commands CKE0,1 Input /S0-3 /RAS,/CAS,/W Input Input A0-11 Input BA0-1...Action READ/WRITE ILLEGAL*2 MIT-DS-0319-0.0 MITSUBISHI ELECTRIC 12/May. /1999 7 MI...
Description From old datasheet system
2,147,483,648-BIT ( 33,554,432-WORD BY 64-BIT ) Synchronous DYNAMIC RAM

File Size 576.68K  /  40 Page

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    MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. MH16S72VJB-6 B99037
OCR Text ...pplied.BA must be set with ACT ,PRE ,READ ,WRITE commands CKE0 Input /S0,2 /RAS,/CAS,/W Input Input A0-11 Input BA0-1 D...Action READ/WRITE ILLEGAL*2 MIT-DS-0313-0.0 MITSUBISHI ELECTRIC 10/May. /1999 7 MI...
Description From old datasheet system
1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM

File Size 926.78K  /  56 Page

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    M5M4V64S30ATP-10L M5M4V64S30ATP-8A M5M4V64S30ATP-8L A98008_A M5M4V64S30ATP-8

MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. M5M4V64S30ATP-10L M5M4V64S30ATP-8A M5M4V64S30ATP-8L A98008_A M5M4V64S30ATP-8
OCR Text ...ed. BA0,1 must be set with ACT, PRE, READ, WRITE commands. Data In and Data out are referenced to the rising edge of CLK. Din Mask / Output ...Action READ / WRITE ILLEGAL*2 ACT PRE / PREA REFA MRS DESEL NOP TBST READ / READA WRITE / WRITEA ...
Description From old datasheet system
64M (4-BANK x 2097152-WORD x 8-BIT) Synchronous DRAM

File Size 1,079.19K  /  51 Page

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    M5M4V64S30ATP-10 M5M4V64S20ATP-8A A98007_A M5M4V64S30ATP-8A M5M4V64S20ATP-10 M5M4V64S20ATP-10L M5M4V64S20ATP-8 M5M4V64S2

Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. M5M4V64S30ATP-10 M5M4V64S20ATP-8A A98007_A M5M4V64S30ATP-8A M5M4V64S20ATP-10 M5M4V64S20ATP-10L M5M4V64S20ATP-8 M5M4V64S20ATP-8L M5M4V64S30ATP-8
OCR Text ...ed. BA0,1 must be set with ACT, PRE, READ, WRITE commands. Data In and Data out are referenced to the rising edge of CLK. Din Mask / Output ...Action READ / WRITE ILLEGAL*2 ACT PRE / PREA REFA MRS DESEL NOP TBST READ / READA WRITE / WRITEA ...
Description 64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM
From old datasheet system

File Size 1,159.44K  /  51 Page

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    M5M4V64S30ATP-12 M5M4V64S30ATP-8 M64S30A1

Mitsubishi Electric Semiconductor
Part No. M5M4V64S30ATP-12 M5M4V64S30ATP-8 M64S30A1
OCR Text ...ed. BA0,1 must be set with ACT, PRE, READ, WRITE commands. Data In and Data out are referenced to the rising edge of CLK. Din Mask / Output ...Action BA, CA, A10 BA, RA BA, A10 X Op-Code, Mode-Add X X BA BA, CA, A10 BA, CA, A10 BA, RA BA, A...
Description 64M (4-BANK x 2097152-WORD x 8-BIT) Synchronous DRAM
From old datasheet system

File Size 1,093.40K  /  48 Page

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