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    VS-MBR1545CTPBF

Vishay Siliconix
Part No. VS-MBR1545CTPBF
OCR Text ...fier has been optimized for low reverse leak age at high temperature. the proprietary barrier technology allows for reliable operation up to 150 c junction temperature. typical applications are in switching power supplies, converters, freew...
Description Schottky Rectifier

File Size 127.62K  /  7 Page

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    Kersemi Electronic Co., Ltd.
Part No. VS-MBR15
OCR Text ...fier has been optimized for low reverse leak age at high temperature. the proprietary barrier technology allows for reliable operation up to 150 c junction tempera ture. typical applications are in switching power supplies, converters, fre...
Description Low forward voltage drop

File Size 1,952.23K  /  5 Page

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    AP2606GY-HF AP2606GY-HF-14

Advanced Power Electronics Corp.
Advanced Power Electron...
Part No. AP2606GY-HF AP2606GY-HF-14
OCR Text ...tance v ds =25v - 80 - pf c rss reverse transfer capacitance f=1.0mhz - 75 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =1.3a, v gs =0v - - 1.5 v t rr reverse recovery time 2 i ...
Description Fast Switching Characteristic, Lower Gate Charge

File Size 85.82K  /  5 Page

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    AP15T25H-HF AP15T25H-HF14

Advanced Power Electronics Corp.
Advanced Power Electronics ...
Part No. AP15T25H-HF AP15T25H-HF14
OCR Text ...tance v ds =25v - 85 - pf c rss reverse transfer capacitance f=1.0mhz - 55 - pf r g gate resistance f=1.0mhz - 1.5 3 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =4a, v gs =0v - - 1...
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Simple Drive Requirement

File Size 58.43K  /  4 Page

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    AP15T20GS-HF14

Advanced Power Electronics Corp.
Part No. AP15T20GS-HF14
OCR Text ...ance v ds =25v - 100 - pf c rss reverse transfer capacitance f=1.0mhz - 65 - pf r g gate resistance f=1.0mhz - 1.5 3 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =5a, v gs =0v - - 1...
Description Simple Drive Requirement

File Size 54.85K  /  4 Page

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    AP15T20GI-HF AP15T20GI-HF14

Advanced Power Electronics Corp.
Part No. AP15T20GI-HF AP15T20GI-HF14
OCR Text ...ance v ds =25v - 100 - pf c rss reverse transfer capacitance f=1.0mhz - 65 - pf r g gate resistance f=1.0mhz - 1.5 3 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =5a, v gs =0v - - 1...
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Simple Drive Requirement

File Size 56.44K  /  4 Page

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    AP15T20GH-HF14

Advanced Power Electronics Corp.
Part No. AP15T20GH-HF14
OCR Text ...ance v ds =25v - 100 - pf c rss reverse transfer capacitance f=1.0mhz - 65 - pf r g gate resistance f=1.0mhz - 1.5 3 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =5a, v gs =0v - - 1...
Description Simple Drive Requirement
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

File Size 54.81K  /  4 Page

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    AP15T20AGH-HF14

Advanced Power Electronics Corp.
Part No. AP15T20AGH-HF14
OCR Text ...ance v ds =25v - 100 - pf c rss reverse transfer capacitance f=1.0mhz - 70 - pf r g gate resistance f=1.0mhz - 1.5 3 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =5a, v gs =0v - - 1...
Description Simple Drive Requirement
Simple Drive Requirement, Lower Gate Charge, Fast Switching Characteristics

File Size 117.72K  /  4 Page

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    VISHAY INTERTECHNOLOGY INC
Part No. VSKJ91/04P
OCR Text ... rrm , maximum repetitive peak reverse voltage v v rsm , maximum non-repetitive peak reverse voltage v i rrm maximum at t j = 150 c ma vsk.91 04 400 500 10 06 600 700 08 800 900 10 1000 1100 12 1200 1300 14 1400 1500 16 1600 1700 fo...
Description 100 A, 400 V, SILICON, RECTIFIER DIODE

File Size 173.73K  /  8 Page

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