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090152 NTE26 CPC5603C D64L4Y5 3077P M81709FP F1310N CFD1275
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    NTE[NTE Electronics]
Part No. NTE2301
OCR Text to218 type package designed for use in large screen deflection circuits. Features: D Collector-Emitter Voltage: VCEX = 1500V D Glassivated Base-Collector Junction D Safe Operating Area @ 50s = 20A, 400V D Switching Times with Inductive Load...
Description Silicon NPN Transistor High Voltage Horizontal Output

File Size 21.40K  /  2 Page

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    NTE256

NTE Electronics
Part No. NTE256
OCR Text ... NPN Darlington transistor in a to218 type package with an integrated Base-Emitter speed-up diode. This device is particularly suitable for use as an output stage in high power, fast switching applications. Absolute Maximum Ratings: Collect...
Description Silicon NPN Transistor Darlington w/Damper Diode

File Size 23.78K  /  2 Page

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    SIGC42T120C Q67041-A4724-A001

INFINEON[Infineon Technologies AG]
Part No. SIGC42T120C Q67041-A4724-A001
OCR Text ...ata sheet BUP 314 Package to218 DESCRIPTION: AQL 0,65 for visual inspection according to failure catalog Electrostatic Discharge Sensitive Device according to MIL-STD 883 Test-Normen Villach/Pruffeld Published by Infineon Techno...
Description IGBT Chip in NPT-technology

File Size 64.08K  /  4 Page

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Part No. IRF351
OCR Text ...ates 400 125 1.2 3.5 1.0n to218 sgsp565 sgsates 400 125 1.2 3.5 1.0n to3 sgsp475 sgsates 400 150 .60 7.0 2.1n to21s sgsp575 sgsates 400 150 .60 7.0 2.1n to3 s0120100 topaz semi 400 40m 300m 500 5.0 8.0...
Description 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3

File Size 103.22K  /  1 Page

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    NTE56031 NTE56030

NTE[NTE Electronics]
Part No. NTE56031 NTE56030
OCR Text to218 type package with an isolated tab designed to be driven directly with IC and MOS devices. Absolute Maximum Ratings: Peak Repetitive Off-State Voltage (Gate Open, TJ = +110C, Note 1), VDRM NTE56030 . . . . . . . . . . . . . . . . . . ....
Description TRIAC, 40 Amp Isolated Tab

File Size 18.93K  /  2 Page

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