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TOSHIBA
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Part No. |
TPC8014
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OCR Text |
...nt: IDSS = 10 A (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA) Unit: mm
Maximum Ratings (Ta = 25C)
Char...pluse) * 10
(A)
10 ms*
Drain current
ID
1 0.1
0.01 0.01
* Single pulse Ta = 25C C... |
Description |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)
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File Size |
210.53K /
7 Page |
View
it Online |
Download Datasheet |
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HSMC[Hi-Sincerity Mocroelectronics]
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Part No. |
H2N7002SN
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OCR Text |
............................... 60 V Drain-Gate Voltage (RGS=1M) .................................................................................pluse
0.01 0.1 1 10 100 1000
t ,Time(ms)
H2N7002SN
HSMC Product Specification
HI-SINC... |
Description |
N-Channel MOSFET (60V, 0.2A)
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File Size |
113.50K /
5 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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