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    2SA2056

TOSHIBA[Toshiba Semiconductor]
Part No. 2SA2056
OCR Text ...BO VCEO VEBO IC ICP IB PC (Note 1) Tj Tstg Rating -50 -50 -7 -2.0 -3.5 -200 1000 625 150 -55 to 150 Unit V V V A mA mW C C JEDEC JEITA TO...40 -30 -20 1000 -1.8 10000 hFE - IC (A) Ta = 100C Collector current DC current gain ...
Description TOSHIBA Transistor Silicon PNP Epitaxial Type

File Size 189.75K  /  5 Page

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    2SA2057

PANASONIC[Panasonic Semiconductor]
Part No. 2SA2057
OCR Text ....90.3 4.60.2 2.90.2 3.20.1 13.70.2 4.20.2 Solder Dip 1.40.2 1.60.2 0.80.1 3.00.5 2.60.1 0.550.15 Absolute Maximum Ratings TC = 25C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base op...
Description Silicon PNP epitaxial planar type

File Size 72.39K  /  3 Page

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    2SA2058

TOSHIBA[Toshiba Semiconductor]
Part No. 2SA2058
OCR Text ...ote) Tj Tstg Rating -20 -10 -7 -1.5 -2.5 -150 500 750 150 -55 to 150 Unit V V V A mA mW C C JEDEC JEITA TOSHIBA 2-3S1A Weight: 0....40 Common emitter Ta = 25C Single nonrepetitive pulse -20 10000 Common emitter VCE = -2 V Single non...
Description TOSHIBA Transistor Silicon PNP Epitaxial Type

File Size 194.32K  /  5 Page

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    2SA2059

TOSHIBA[Toshiba Semiconductor]
Part No. 2SA2059
OCR Text ...ating -20 -20 -7 -3.0 -5.0 -300 1.0 2.5 150 -55 to 150 Unit V V V A mA JEDEC W C C SC-62 2-5K1A JEITA TOSHIBA Weight: 0.05 g (...40 Max -100 -100 500 -0.19 -1.10 ns V V pF Unit nA nA V 1 2001-10-29 2SA2059 Marking...
Description SILICON PNP EPITAXIAL TYPE

File Size 181.01K  /  5 Page

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    2SA2061

TOSHIBA[Toshiba Semiconductor]
Part No. 2SA2061
OCR Text ...nted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 2 645 mm ) Electrical Characteristics (Ta = 25C) Characteristics Collector cut-of...40 Max -100 -100 500 -0.19 -1.10 ns V V pF Unit nA nA V 1 2001-10-29 2SA2061 Marking...
Description Silicon PNP Epitaxial Type

File Size 167.29K  /  5 Page

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    2SA2062 2SC5774

Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
Part No. 2SA2062 2SC5774
OCR Text ... Fall Time Symbol ICBO IEBO hFE(1) hFE(2) fT Cob VBE VCE(sat) V(BR)CBO V(BR)CEO V(BR)EBO ton tstg tf Conditions VCB=(--)160V, IE=0 VEB=(--)4...40 C --4 --3 --2 --1 0 0 --0.5 Ta= 120 C 0.2 0.6 --1.0 --1.5 IT03412 25C --40C 0.8 ...
Description 140V / 10A, AF70W Output Applications

File Size 34.06K  /  4 Page

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    2SA2064

PANASONIC[Panasonic Semiconductor]
Part No. 2SA2064
OCR Text ....90.3 4.60.2 2.90.2 3.20.1 13.70.2 4.20.2 Solder Dip 1.40.2 1.60.2 0.80.1 3.00.5 2.60.1 0.550.15 Absolute Maximum Ratings TC = 25C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base op...
Description Silicon PNP epitaxial planar type

File Size 70.35K  /  3 Page

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    2SA2067

PANASONIC[Panasonic Semiconductor]
Part No. 2SA2067
OCR Text ...tion eith radial taping 2.50.1 Features 13.00.2 1.20.1 1.480.2 90 Power supply for audio & visual equipments such as TVs ...40 - 0.8 V MHz s s s Min -60 -100 -100 -1 320 Typ Max Unit V A A mA Note) 1. Measuring methods a...
Description Silicon PNP epitaxial planar type

File Size 66.39K  /  3 Page

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    2SA2069

TOSHIBA[Toshiba Semiconductor]
Part No. 2SA2069
OCR Text ...BO VCEO VEBO IC ICP IB PC (Note 1) Tj Tstg Rating -20 -20 -7 -1.5 -2.5 -150 2.0 1.0 150 -55 to 150 Unit V V V A mA W C C JEDEC JEITA TOSH...40 135 37 Max -100 -100 500 -0.14 -1.10 ns V V pF Unit nA nA V 1 2001-10-29 2SA2069 ...
Description High-Speed Switching Applications DC-DC Converter Applications

File Size 194.91K  /  5 Page

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    2SA2070

TOSHIBA[Toshiba Semiconductor]
Part No. 2SA2070
OCR Text ...gain: hFE = 200 to 500 (IC = -0.1 A) Low collector-emitter saturation voltage: VCE (sat) =- 0.20 V (max) High-speed switching: tf = 70 ns (t...40 -30 -20 -15 -0.6 -10 -5 -0.4 -2 IB = -1mA -0.2 Common emitter Ta = 25C Single nonrepetitive pulse...
Description TOSHIBA Transistor Silicon PNP Epitaxial Type

File Size 131.46K  /  5 Page

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