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  168a Datasheet PDF File

For 168a Found Datasheets File :: 10164    Search Time::1.688ms    
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    2SJ418

SANYO[Sanyo Semicon Device]
Part No. 2SJ418
OCR Text ...8 -9 -8 ID - VDS -8.0V -16 ID - VGS VDS=-10V -1 0.0 V .0V -6 -7 Drain Current, ID - A Drain Current, ID - A ...8A 0.8 DC Operation in this area is limited by RDS(on). 10 op er at ms 0.6 io ...
Description Ultrahigh-Speed Switching Applications

File Size 126.59K  /  4 Page

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    2SJ466

SANYO[Sanyo Semicon Device]
Part No. 2SJ466
OCR Text ... VGS=-10V ID=-18A, VGS=-4V -1.0 16 27 20 30 30 40 Conditions Ratings min -30 20 -100 10 -2.0 typ max Unit V V A A V S m m Continued on ne...8A, --4 S= V 3 2 1000 7 5 3 2 100 7 5 Coss Crss 20 -1 I D=- --10 S= 8A, VG ...
Description P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications

File Size 38.71K  /  4 Page

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    2SJ530 2SJ530L 2SJ530S

HITACHI[Hitachi Semiconductor]
Part No. 2SJ530 2SJ530L 2SJ530S
OCR Text ...70 Max -- -- -10 10 -2.0 0.10 0.16 -- -- -- -- -- -- -- -- -- -- Unit V V A A V S pF pF pF ns ns ns ns V ns I F = -15A, VGS = 0 I F = -15A...8A, VGS = -10V Note4 I D = -8A, VGS = -4V Note4 I D = -8A, VDS = -10V Note4 VDS = -10V VGS = 0 f = 1...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 56.07K  /  9 Page

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    2SJ541

HITACHI[Hitachi Semiconductor]
Part No. 2SJ541
OCR Text ...ID Drain Current I D (A) -16 Pulse Test -3.5 V -16 -12 -12 Drain Current -8 -3 V -4 VGS = -2.5 V 0 -2 -4 -6 Drain to Source Voltage -8 -10 V DS (V) -8 Tc = 75C -4 25C -25C -1 -2 -3 Gate to Source Voltage -4 -5 V G...
Description Silicon P-Channel MOS FET
Silicon P Channel MOS FET High Speed Power Switching

File Size 52.02K  /  9 Page

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    2SJ546

HITACHI[Hitachi Semiconductor]
Part No. 2SJ546
OCR Text ... DS = -10 V (A) I D (A) -16 -3.5 V -16 -12 ID Drain Current -12 Drain Current -8 -3 V -4 VGS = -2.5 V 0 -2 -4 -6 -8 V DS (V) -10 -8 Tc = 75C -4 25C -25C -1 -2 -3 -4 V GS (V) -5 0 Drain to Source Voltage ...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 51.21K  /  9 Page

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    2SJ548

HITACHI[Hitachi Semiconductor]
Part No. 2SJ548
OCR Text ...ID Drain Current I D (A) -16 Pulse Test -3.5 V -16 -12 -12 Drain Current -8 -3 V -4 VGS = -2.5 V 0 -2 -4 -6 Drain to Source Voltage -8 -10 V DS (V) -8 Tc = 75C -4 25C -25C -1 -2 -3 Gate to Source Voltage -4 -5 V G...
Description Silicon P-Channel MOS FET
Silicon P Channel MOS FET High Speed Power Switching

File Size 51.21K  /  9 Page

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    2SJ550 2SJ550L 2SJ550S

HITACHI[Hitachi Semiconductor]
http://
Part No. 2SJ550 2SJ550L 2SJ550S
OCR Text ... ID Drain Current (A) -16 -16 -12 Drain Current -8 -3 V -4 VGS = -2.5 V 0 -2 -4 -6 -8 V DS (V) -10 -8 Tc = 75C -4 25C -25C -1 -2 -3 -4 V GS (V) -5 0 Drain to Source Voltage Gate to Source Voltage 3 2SJ...
Description Power switching MOSFET
Silicon P Channel MOS FET High Speed Power Switching

File Size 55.48K  /  9 Page

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    2SJ562

SANYO[Sanyo Semicon Device]
Part No. 2SJ562
OCR Text ... -8 -10 -12 -14 -16 -18 -20 0 0 1 2 3 4 5 6 7 8 9 10 Drain-to-Source Voltage, VD...8A I D =- 2A DC Switching Time, SW Time - ns 3 2 100 7 5 3 2 10 7 5 3 2 1.0 7 -0.1 2 3 5 7 -1....
Description P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications

File Size 146.08K  /  4 Page

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    2SJ579

SANYO[Sanyo Semicon Device]
Part No. 2SJ579
OCR Text ...-2 --4 --6 --8 --10 --12 --14 --16 --18 --20 200 0 --60 --40 --20 0 20 40 60 80 100 120 C 140 160 IT01170 ...8A 10s 10 0 s 1m 10 s m s Gate-to-Source Voltage, VGS - V --9 --8 --7 --6 --5 --4 --3 --2 --1...
Description Ultrahigh-Speed Switching Applications

File Size 41.45K  /  4 Page

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    2SJ580

Sanyo Semicon Device
Part No. 2SJ580
OCR Text ...atings min typ 270 70 20 9 7 38 16 9.8 1.4 1.7 --0.81 --1.2 max Unit pF pF pF ns ns ns ns nC nC nC V Marking : JR Switching Time Test ...8A 4V = -V GS , 0V 8A --0. = --1 VGS I D= A, --1.0 I D= Gate-to-Source Voltage, VGS -- V IT...
Description Ultrahigh-Speed Switching Applications

File Size 29.05K  /  4 Page

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