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  2.5-ghz Datasheet PDF File

For 2.5-ghz Found Datasheets File :: 23317    Search Time::1.922ms    
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    AS179-92

Alpha Industries Inc
Skyworks Solutions Inc.
Part No. AS179-92
OCR Text ...) 0.0256 (0.65 mm) BSC 0.049 (1.25 mm) 0.004 (0.10 mm) 0.087 (2.20 mm) 0.008 (0.20 mm) PIN 1 INDICATOR 0.035 (0.90 mm) 0.004 (0.10 ...GHz DC-3.0 GHz DC-1.0 GHz DC-2.0 GHz DC-3.0 GHz DC-1.0 GHz DC-2.0 GHz DC-3.0 GHz 22 22 20 Min. Typ. ...
Description PHEMT GaAs IC SPDT Switch DC GHz
PHEMT GaAs IC SPDT Switch DC-3 GHz

File Size 22.94K  /  2 Page

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    BLF2045

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BLF2045
OCR Text ...NCE DATA RF performance at Th = 25 C in a common source test circuit. MODE OF OPERATION 2-tone, class-AB f (MHz) f1 = 2000; f2 = 2000.1 VDS ...GHz) -6 1.8 2 RL XL -4 2.2 f (GHz) VDS = 26 V; IDQ = 180 mA; PL = 45 W; T h 25 C. ...
Description UHF power LDMOS transistor

File Size 131.69K  /  11 Page

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    SBFP420D

Sanyo Semicon Device
Part No. SBFP420D
OCR Text ...absolute maximum ratings at ta=25 c parameter symbol conditions ratings unit collector-to-base voltage v cbo 15 v collector-to-emitter vol...ghz f t 2v ce =3v, i c =30ma 18 25 ghz reverse transfer capacitance cre v cb =1v, f=1mhz 0.17 0.27 ...
Description UHF to C Band Low Noise Amplifier Oscillation Applications

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    HMC318MS8G

HITTITE[Hittite Microwave Corporation]
Part No. HMC318MS8G
OCR Text ...lectrical Specifications, TA = +25 C, Vdd = +3V Parameter* Frequency Range Gain Gain Variation over Temperature Gain Control Range Noise Fi...GHz dB dB/C dB dB dB dB dBm dBm mA * Specifications refer to the maximum gain state (Vctl = 0V) u...
Description GaAs MMIC LOW NOISE AMPLIFIER with AGC 5.0 - 6.0 GHz
GaAs MMIC LOW NOISE AMPLIFIER with AGC, 5.0 - 6.0 GHz

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    MSA-9970

Avago Technologies, Ltd.
HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
Part No. MSA-9970
OCR Text ...abricated using HP's 10 GHz fT, 25 GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias...
Description Cascadable Silicon Bipolar MMIC Amplifier 级联硅双极MMIC放大

File Size 44.98K  /  4 Page

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    NE68139R-T1 NE68139-T1 NE68133-T1 NE68118-T1 NE68100 NE68119-T1 NE681 NE68130-T1 NE68133-T1B NE68135

NEC[NEC]
Part No. NE68139R-T1 NE68139-T1 NE68133-T1 NE68118-T1 NE68100 NE68119-T1 NE681 NE68130-T1 NE68133-T1B NE68135
OCR Text ...0 1.0 1.0 0.45 0.2 0.7 80 600 0.25 0.8 833 150 1000 100 833 150 160 1.0 1.0 0.9 0.45 40 240 1.0 1.0 0.9 2.5 1.4 1.8 14 10 14 8 7.0 1.5 1.6 1...GHz f = 2 GHz Associated Gain at VCE = 8 V, IC = 7 mA, f = 1 GHz f = 2 GHz Insertion Power Gain at V...
Description NECs NPN SILICON HIGH FREQUENCY TRANSISTOR

File Size 215.81K  /  20 Page

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    NJM12901 NJM12901D1 NJM12901E NJM12901M NJM12901V PH2729-25M

MACOM[Tyco Electronics]
Part No. NJM12901 NJM12901D1 NJM12901E NJM12901M NJM12901V PH2729-25M
OCR Text 25 WATTS, 2.70-2.90 GHz, 100s PULSE, 10% DUTY OUTLINE DRAWING FEATURES NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballast...
Description RADAR PULSED POWER TRANSISTOR 25 WATTS, 2.70-2.90 GHz, 100ms PULSE, 10% DUTY
PH2729-25M RADAR PULSED POWER TRANSISTOR 25 WATTS, 2.70-2.90 GHz, 100s PULSE, 10% DUTY
RADAR PULSED POWER TRANSISTOR 25 WATTS 2.70-2.90 GHz 100ms PULSE 10% DUTY
PH2729-25M RADAR PULSED POWER TRANSISTOR 25 WATTS / 2.70-2.90 GHz / 100s PULSE / 10% DUTY
RADAR PULSED POWER TRANSISTOR 25 WATTS/ 2.70-2.90 GHz/ 100ms PULSE/ 10% DUTY
PH2729-25M RADAR PULSED POWER TRANSISTOR 25 WATTS, 2.70-2.90 GHz, 100?? PULSE, 10% DUTY

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    ROSENBERGER HOCHFREQUENZTECHNIK GMBH & CO KG
Part No. 53QS20C-3Y8N
OCR Text ...n loss (straight connector): 25 db 3- 6 ghz (typ.) ? quick locking system compatible to n ? excellent intermodulation ? high packing density ? 360 rotatable ? toolless mounting. ? interface stecker kompatibel mit: iec 60169- 16, cecc 2...
Description CABLE TERMINATED, MALE, RF CONNECTOR, CRIMP, PLUG

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