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    MTB16N25E_D ON2396 MTB16N25E MTB16N25E-D MOTOROLAINC-MTB16N25E-T4

Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
ON Semiconductor
Part No. MTB16N25E_D ON2396 MTB16N25E MTB16N25E-D MOTOROLAINC-MTB16N25E-T4
OCR Text designer'sTM Data Sheet TMOS E-FET.TM High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate The D2PAK package has the capability of housing a larger die than any existing surface mount package which allo...
Description TMOS POWER FET 16 AMPERES 16 A, 250 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET
From old datasheet system
TMOS POWER FET 16 AMPERES 250 VOLTS
TMOS E-FET High Energy Power FET D2PAK for Surface Mount

File Size 259.50K  /  10 Page

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    List of Unclassifed Man...
Part No. VJDSNDTGSV62M
OCR Text ...teristics vjdsndtgsv62m vijeo designer 6.2, hmi configuration software single license main commercial status commercialised range of product vijeo designer product or component type configuration software user la...
Description Vijeo designer 6.2, HMI configuration software single license

File Size 48.47K  /  2 Page

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    MGP11N60ED_D ON1850 MGP11N60ED ON1849

ON Semiconductor
Part No. MGP11N60ED_D ON1850 MGP11N60ED ON1849
OCR Text designer'sTM Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) is co-packaged with a soft recovery ultra-fast rectifier and uses ...
Description IGBT IN TO-220 11 A @ 90C15 A @ 25C 600 VOLTS
From old datasheet system
SHORT CIRCUIT RATED LOW ON-VOLTAGE 15 A, 600 V, N-CHANNEL IGBT, TO-220AB

File Size 141.86K  /  6 Page

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    ONSEMI[ON Semiconductor]
Part No. MGP11N60E_D ON1851 MGP11N60E ON1848
OCR Text designer'sTM Data Sheet Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage-blocki...
Description From old datasheet system
IGBT IN TO-220 11 A @ 90C15 A @ 25C 600 VOLTS
SHORT CIRCUIT RATED LOW ON-VOLTAGE 15 A, 600 V, N-CHANNEL IGBT, TO-220AB

File Size 116.41K  /  5 Page

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    ON Semi
Part No. MMSF1308_D ON2250
OCR Text designer'sTM Data Sheet Low Power Surface Mount Products MMSF1308 Motorola Preferred Device Single N-Channel MiniMOSTM Field Effect Transistor MiniMOSTM devices are an advanced series of power MOSFETs which utilize Motorola's Hig...
Description Low Power Surface Mount Products
From old datasheet system

File Size 173.78K  /  10 Page

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    AVAGO TECHNOLOGIES LIMI...
Part No. HFBR-57E5APZ
OCR Text ... trans- ceiver gives the system designer a product to implement fddi/fast ethernet network with dmi and sonet oc-3 (sdh stm-1) physical layers for atm and other services. as an enhancement to the conventional sfp interface defi ned in s...
Description Multimode Small Form-Factor Pluggable Transceivers with LC connector and DMI for ATM, FDDI, Fast Ethernet and SONET OC-3/SDH STM-1

File Size 230.88K  /  15 Page

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    ONSEMI[ON Semiconductor]
Part No. MGP21N60E_D ON1869 MGP21N60E ON1868
OCR Text designer'sTM Data Sheet Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage-blocki...
Description IGBT IN TO-220 21 A @ 90 31 A @ 25 600 VOLTS
From old datasheet system
Insulated Gate Bipolar Transistor

File Size 119.33K  /  5 Page

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    MTV20N50E

ON Semiconductor
Part No. MTV20N50E
OCR Text designer?s ? data sheet tmos e?fet . ? power field effect transistor d 3 pak for surface mount n ? channel enhancement ? mode silicon gate the d 3 pak package has the capability of housing the largest chip size of any standard, plastic, s...
Description Power Field Effect Transistor

File Size 280.42K  /  11 Page

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