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For irrm Found Datasheets File :: 7494    Search Time::1.625ms    
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    Z0103MA1AA2 Z0103MA2AL2 Z0103MA5AA4 Z0103MN Z0103MN1AA2 Z0103MN2AL2 Z0103MN5AA4 Z0103NA1AA2 Z0103NA2AL2 Z0103NA5AA4 Z010

STMicroelectronics
ST Microelectronics
Part No. Z0103MA1AA2 Z0103MA2AL2 Z0103MA5AA4 Z0103MN Z0103MN1AA2 Z0103MN2AL2 Z0103MN5AA4 Z0103NA1AA2 Z0103NA2AL2 Z0103NA5AA4 Z0103NN1AA2 Z0103NN2AL2 Z0103NN5AA4 Z0103SA Z0103SA1AA2 Z0103SA2AL2 Z0103SA5AA4 Z0103SN Z0103SN1AA2 Z0103SN2AL2 Z0103SN5AA4 Z0107MA Z0107MA1AA2 Z0107MA2AL2 Z0107MA5AA4 Z0107MN Z0107MN1AA2 Z0107MN2AL2 Z0107MN5AA4 Z0107SA Z0107SA1AA2 Z0107SA2AL2 Z0107SA5AA4 Z0107SN Z0107SN1AA2 Z0107SN2AL2 Z0107SN5AA4 Z0109MA1AA2 Z0109MA2AL2 Z0109MA5AA4 Z0109MN Z0109MN1AA2 Z0109MN2AL2 Z0109MN5AA4 Z0109SA Z0109SA1AA2 Z0109SA2AL2 Z0109SA5AA4 Z0109SN Z0109SN1AA2 Z0109SN2AL2 Z0109SN5AA4 Z0110MA Z0110MA1AA2 Z0110MA2AL2 Z0110MA5AA4 Z0110MN Z0110MN1AA2 Z0110MN2AL2 Z0110MN5AA4 Z0110SA Z0110SA1AA2 Z0110SA2AL2 Z0110SA5AA4 Z0110SN Z0110SN1AA2 Z0110SN2AL2 Z0110SN5AA4 Z0109NN Z0109NA Z0110NN Z0110NA Z0103NN Z0103NA Z0107NA Z0107NA1AA2 Z0107NA2AL2 Z0107NA5AA4 Z0107NN1AA2 Z0107NN2AL2 Z0107NN5AA4 Z0103MA Z0110NA5AA4 Z0109NN2AL2 Z0110NN2AL2 Z0110NN1AA2 Z0110NN5AA4 Z0109NN1AA2 Z0109NA1AA2 Z0109NA5AA4 Z01
OCR Text ...bol VTM (2) Vto (2) Rd (2) IDRM irrm Note 1: minimum IGT is guaranted at 5% of IGT max. Note 2: for both polarities of A2 referenced to A1 Test Conditions ITM = 1.4 A tp = 380 s Tj = 25C Tj = 125C Tj = 125C Tj = 25C Tj = 125C MAX. MAX. ...
Description IC FLEX 10K FPGA 40K 208-RQFP
1A TRIACS

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    2N6505 2N6507 2N6509 2N6504 2N6508 2N6504/D

ONSEMI[ON Semiconductor]
Part No. 2N6505 2N6507 2N6509 2N6504 2N6508 2N6504/D
OCR Text ... VDRM or VRRM, Gate Open) IDRM, irrm TJ = 25C TJ = 125C - - - - 10 2.0 A mA ON CHARACTERISTICS *Forward On-State Voltage (Note 2.) (ITM = 50 A) *Gate Trigger Current (Continuous dc) (VAK = 12 Vdc, RL = 100 Ohms) *Gate Trigger Voltage (C...
Description 5-Pin &#181;P Supervisory Circuits with Watchdog and Manual Reset 5个引amp;#181;带看门狗和手动复位的P监控电路
Silicon Controlled Rectifiers

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    ACS302-5T3 ACS302-5T3-TR

ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
Part No. ACS302-5T3 ACS302-5T3-TR
OCR Text ... = 10mA Tj=25C TYP MAX VTM IDRM irrm dV/dt (dI/dt)c IOUT = 0.3A VOUT = VDRM VOUT = VRRM VOUT = 400V gate open (dV/dt)c = 5V/s IOUT > 0 tp = 380s Tj=25C Tj=25C Tj=125C Tj=110C Tj=110C Tj=110C Tj=25C MAX MAX MAX MIN MIN MIN TYP Values 5 0.9 0...
Description THREE LINES AC SWITCH ARRAY
THREE LINES AC SWITCH ARRAY

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    APT5010B2VFR

Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Microsemi, Corp.
Part No. APT5010B2VFR
OCR Text ...[Cont.]) 6 dv/ t rr Q rr irrm Reverse Recovery Time (IS = -ID [Cont.], di/dt = 100A/s) Reverse Recovery Charge (IS = -ID [Cont.], di/dt = 100A/s) Peak Recovery Current (IS = -ID [Cont.], di/dt = 100A/s) 250 500 1.6 5.5 15 27 ...
Description POWER MOS V 500V 47A 0.100 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
TERM BLOCK 10MM VERT 3POS PCB 电源MOS V是一个高电压N新一代通道增强型功率MOSFET

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    APT5010B2 APT5010B2FLL APT5010LFLL

ADPOW[Advanced Power Technology]
Part No. APT5010B2 APT5010B2FLL APT5010LFLL
OCR Text ...ode Recovery dv/dt t rr Q rr irrm Reverse Recovery Time (IS = -ID [Cont.], di/dt = 100A/s) Reverse Recovery Charge (IS = -ID [Cont.], di/dt = 100A/s) Peak Recovery Current (IS = -ID [Cont.], di/dt = 100A/s) AL IC HN EC ION TT CE MA...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

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    APT5010JFLL

ADPOW[Advanced Power Technology]
Part No. APT5010JFLL
OCR Text ...ode Recovery dv/dt t rr Q rr irrm Reverse Recovery Time (IS = -ID [Cont.], di/dt = 100A/s) Reverse Recovery Charge (IS = -ID [Cont.], di/dt = 100A/s) Peak Recovery Current (IS = -ID [Cont.], di/dt = 100A/s) AL IC HN EC ION TT CE MA...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS

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    APT5010JVFR

ADPOW[Advanced Power Technology]
Part No. APT5010JVFR
OCR Text ...[Cont.]) 5 dv/ t rr Q rr irrm Reverse Recovery Time (IS = -ID [Cont.], di/dt = 100A/s) Reverse Recovery Charge (IS = -ID [Cont.], di/dt = 100A/s) Peak Recovery Current (IS = -ID [Cont.], di/dt = 100A/s) 250 500 1.6 5.5 15 27 ...
Description POWER MOS V 500V 44A 0.100 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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    APT5010JVRU2

Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
Part No. APT5010JVRU2
OCR Text ...tage Drop vs Forward Current 40 irrm, REVERSE RECOVERY CURRENT (AMPERES) TJ = 100C VR = 350V 0 0 10 50 100 500 1000 diF /dt, CURRENT SLEW RATE (AMPERES/SEC) Figure 16, Reverse Recovery Charge vs Current Slew Rate 2.0 Kf, DYNAMIC P...
Description POWER MOS V 500V 44A 0.100 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 110.72K  /  7 Page

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    APT5010JVRU3

Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
Part No. APT5010JVRU3
OCR Text ...tage Drop vs Forward Current 40 irrm, REVERSE RECOVERY CURRENT (AMPERES) TJ = 100C VR = 350V 0 0 10 50 100 500 1000 diF /dt, CURRENT SLEW RATE (AMPERES/SEC) Figure 16, Reverse Recovery Charge vs Current Slew Rate 2.0 Kf, DYNAMIC P...
Description POWER MOS V 500V 44A 0.100 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 111.65K  /  7 Page

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    APT5010LVFR APT20M22LVFR

Advanced Power Technology, Ltd.
ADPOW[Advanced Power Technology]
Part No. APT5010LVFR APT20M22LVFR
OCR Text ...[Cont.]) 5 dv/ t rr Q rr irrm Reverse Recovery Time (IS = -ID [Cont.], di/dt = 100A/s) Reverse Recovery Charge (IS = -ID [Cont.], di/dt = 100A/s) Peak Recovery Current (IS = -ID [Cont.], di/dt = 100A/s) 250 500 1.6 5.5 15 27 ...
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
POWER MOS V 500V 47A 0.100 Ohm

File Size 66.12K  /  4 Page

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For irrm Found Datasheets File :: 7494    Search Time::1.625ms    
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