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methodology Datasheet PDF File

For methodology Found Datasheets File :: 1655 Search Time::1.109ms
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				NXP Semiconductors
Part No.	AFT18H357-24N AFT18H357-24NR6
OCR Text	...protection characteristics test methodology class human body model (per jesd22--a114) 2 machine model (per eia/jesd22--a115) b charge device model (per jesd22--c101) iv table 4. moisture sensitivity level test methodology rating package pea...
Description	N-Channel Enhancement-Mode Lateral MOSFET
File Size	517.87K / 17 Page	View it Online	Download Datasheet

				Freescale Semiconductors
Part No.	MRF6S21100NBR1 MRF6S21100N
OCR Text	... to AN1955, Thermal Measurement methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reason...
Description	Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz
File Size	510.14K / 12 Page	View it Online	Download Datasheet

				Freescale Semiconductor, Inc
Part No.	MD8IC970NR1
OCR Text	...rotection Characteristics Test methodology Human Body Model (per JESD22--A114) Machine Model (per EIA/JESD22--A115) Charge Device Model (per JESD22--C101) Class 1A (Minimum) A (Minimum) I (Minimum) Table 4. Moisture Sensitivity Level T...
Description	RF LDMOS Wideband Integrated Power Amplifier
File Size	399.75K / 14 Page	View it Online	Download Datasheet

				Freescale Semiconductor, Inc
Part No.	MRFG35003N6AT1
OCR Text	...rotection Characteristics Test methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 2 (Minimum) A (Minimum) IV (Minimum) Table 4. Moisture Sensitivity Level...
Description	Gallium Arsenide PHEMT RF Power Field Effect Transistor
File Size	213.06K / 11 Page	View it Online	Download Datasheet

				Freescale Semiconductor, Inc
Part No.	MW7IC2725GNR1 MW7IC2725NBR1 MW7IC2725NR1
OCR Text	...rotection Characteristics Test methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1B (Minimum) A (Minimum) II (Minimum) Table 4. Moisture Sensitivity Leve...
Description	RF LDMOS Wideband Integrated Power Amplifiers
File Size	809.04K / 24 Page	View it Online	Download Datasheet

				Freescale Semiconductor, Inc
Part No.	MW7IC2750GNR1 MW7IC2750NBR1 MW7IC2750NR1
OCR Text	...rotection Characteristics Test methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1C (Minimum) A (Minimum) III (Minimum) Table 4. Moisture Sensitivity Lev...
Description	RF LDMOS Wideband Integrated Power Amplifiers
File Size	875.75K / 25 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	MRF8P9040GNR1 MRF8P9040NBR1 MRF8P9040NR1
OCR Text	...protection characteristics test methodology class human body model (per jesd22--a114) 1b (minimum) machine model (per eia/jesd22--a115) a (minimum) charge device model (per jesd22--c101) iii (minimum) table 4. moisture sensitivity level tes...
Description	N-Channel Enhancement-Mode Lateral MOSFET
File Size	903.14K / 23 Page	View it Online	Download Datasheet

				Freescale Semiconductor, Inc http://
Part No.	MW7IC2750NR110 MW7IC2750GNR1 MW7IC2750NBR1
OCR Text	...rotection Characteristics Test methodology Human Body Model (per JESD22-A114) Machine Model (per EIA/JESD22-A115) Charge Device Model (per JESD22-C101) Class 1C (Minimum) A (Minimum) III (Minimum) Table 4. Moisture Sensitivity Level Te...
Description	RF LDMOS Wideband Integrated Power Amplifiers
File Size	893.11K / 25 Page	View it Online	Download Datasheet

				Freescale Semiconductor, Inc Freescale Semiconductor...
Part No.	MRF6VP11KHR609
OCR Text	... to AN1955, Thermal Measurement methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. (c) Freescale Semiconductor, Inc., 2008-2009. All rights reserved. MRF6VP11KHR6 1 ...
Description	RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
File Size	460.92K / 11 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	AFT09S282N AFT09S282NR3
OCR Text	...protection characteristics test methodology class human body model (per jesd22--a114) 2 machine model (per eia/jesd22--a115) b charge device model (per jesd22--c101) iv table 4. moisture sensitivity level test methodology rating package pea...
Description	N-Channel Enhancement-Mode Lateral MOSFET
File Size	522.54K / 14 Page	View it Online	Download Datasheet

For methodology Found Datasheets File :: 1655 Search Time::1.109ms
Page :: | 1 | 2 | 3 | 4 | <5> | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |