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Part No. MT48V4M32LFF5-10XTG
OCR Text ...cle ? internal banks for hiding row access/precharge ? programmable burst lengths: 1, 2, 4, 8, or full page ? auto precharge, includes co ncurrent auto precharge, and auto refresh modes ? self refresh mode; standard and low power ? 64ms, ...
Description 4M X 32 SYNCHRONOUS DRAM, 7 ns, PBGA90

File Size 2,701.10K  /  79 Page

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Part No. MT16VR12816AG-745B1
OCR Text ...ity ? control bus with separate row and column buses for easier command scheduling ? programmable output delay timing for round-trip delay of one to five cycles ? write buffer to reduce read latency ? three precharge mechanisms for controll...
Description 128M X 16 RAMBUS MODULE, 45 ns, DMA84

File Size 181.72K  /  8 Page

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    Micron Technology, Inc.
Part No. MT16LSDT464A
OCR Text ...cle ? internal banks for hiding row access/precharge ? programmable burst lengths: 1, 2, 4, 8 or full page ? auto precharge and auto refresh modes ? self refresh mode ? 64ms, 4,096-cycle refresh ? lvttl-compatible inputs and outputs ? seria...
Description 4 Meg x 64 SDRAM DIMMs(4M x 64????ㄦ?RAM,????存?瀛???ㄦā??

File Size 261.57K  /  19 Page

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Part No. MR16R082CBN1-CG6 MR16R082CBN1-CK7
OCR Text ...nd data buses with independent row and column control yield over 95% bus efficiency. the rdram's 32-bank architecture supports up to four simultaneous transactions per device. features h igh speed 800, 711 and 600mhz rdram storage ...
Description 96M X 16 RAMBUS MODULE, 53.3 ns, DMA184
96M X 16 RAMBUS MODULE, 45 ns, DMA184

File Size 268.08K  /  14 Page

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    Multicomp
Part No. MCAK304NWWB
OCR Text ...put pin number symbol 1 col 2 2 row 1 3 col 1 4 row 4 5 col 3 6 row 3 7 row 2 standard matrix circuit diagram: mcak304nwwb keypads page 2 08/09/06 v1.0 actuating force : 100 30 grams. stroke : 1.4 0.4mm dimensions : millimetres part nu...
Description Keypads

File Size 172.88K  /  2 Page

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Part No. HYM71V16735AT8-K
OCR Text ... /cas activity a0 ~ a11 address row address : ra0 ~ ra11, co lumn address : ca0 ~ ca9 auto-precharge flag : a10 /ras, /cas, /we row address strobe, column address strobe, write enable /ras, /cas and /we define the operation refer function ...
Description x72 SDRAM Module

File Size 211.45K  /  14 Page

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    UPD45128163 UPD45128163G5-A10 UPD45128163G5-A10-9JF UPD45128163G5-A10B UPD45128163G5-A10B-9JF UPD45128163G5-A75 UPD45128

NEC[NEC]
Part No. UPD45128163 UPD45128163G5-A10 UPD45128163G5-A10-9JF UPD45128163G5-A10B UPD45128163G5-A10B-9JF UPD45128163G5-A75 UPD45128163G5-A75-9JF UPD45128163G5-A80 UPD45128163G5-A80-9JF UPD45128441 UPD45128441G5-A10 UPD45128441G5-A10-9JF UPD45128441G5-A10B UPD45128441G5-A10B-9JF UPD45128441G5-A75 UPD45128441G5-A75-9JF UPD45128441G5-A80 UPD45128441G5-A80-9JF UPD45128841 UPD45128841G5-A10 UPD45128841G5-A10-9JF UPD45128841G5-A10B UPD45128841G5-A10B-9JF UPD45128841G5-A75 UPD45128841G5-A75-9JF UPD45128841G5-A80 UPD45128841G5-A80-9JF
OCR Text ... : Clock enable : Chip select : row address strobe : Column address strobe : Write enable : DQ mask enable : Supply voltage : Ground : Supply voltage for DQ : Ground for DQ : No connection Note A0 to A11 : row address inputs A0 to A9, A11 :...
Description 128M-bit Synchronous DRAM 4-bank, LVTTL

File Size 1,081.23K  /  92 Page

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    HYNIX SEMICONDUCTOR INC
Part No. HY5PS12821F-Y6
OCR Text ...vddq nc vddq nc vdd odt vdd vss row and column address table items 128mx4 organization 32m x 4 x 4banks row address a0 - a13 column address a0-a9, a11 bank address ba0, ba1 auto precharge flag a10 refresh 8k rev. 0.6 / apr.2003 ...
Description 64M X 8 DDR DRAM, PBGA60

File Size 885.74K  /  67 Page

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    PROMOS TECHNOLOGIES INC
Part No. V58C2256164SCE5B
OCR Text ...clock enable cs chip select ras row address strobe cas column address strobe we write enable dqs (udqs, ldqs) data strobe (bidirectional) a 0 ?a 12 address inputs ba0, ba1 bank select dq?s data input/output dm (udm, ldm) data mask v dd powe...
Description 16M X 16 DDR DRAM, 0.65 ns, PDSO66

File Size 917.36K  /  61 Page

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