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  z-mos Datasheet PDF File

For z-mos Found Datasheets File :: 7304    Search Time::1.094ms    
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    2SJ574

HITACHI[Hitachi Semiconductor]
Part No. 2SJ574
OCR Text Z) 3rd.Edition. June 1999 Features * Low on-resistance R DS = 1.1 typ. (VGS = -10 V , I D = -150 mA) R DS = 2.2 typ. (VGS = -4 V , I D = -150 mA) * 4 V gate drive device. * Small package (MPAK) Outline MPAK 3 1 D 3 2 2 G ...
Description Silicon P Channel MOS FET High Speed Switching

File Size 38.90K  /  8 Page

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    2SJ575

Hitachi Semiconductor
Part No. 2SJ575
OCR Text Z) 3rd.Edition. June 1999 Features * Low on-resistance R DS =2.8 typ. (V GS = -10 V , I D = -50 mA) R DS =5.7 typ. (V GS = -4 V , ID = -50 mA) * 4 V gate drive device. * Small package (MPAK) Outline MPAK 3 1 D 3 2 2 G 1....
Description Silicon P Channel MOS FET High Speed Switching

File Size 38.55K  /  8 Page

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    2SJ576

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HITACHI[Hitachi Semiconductor]
Part No. 2SJ576
OCR Text Z) 3rd.Edition. June 1999 Features * Low on-resistance R DS =2.8 typ. (V GS = -10 V , I D = -50 mA) R DS =5.7 typ. (V GS = -4 V , ID = -50 mA) * 4 V gate drive device. * Small package (CMPAK) Outline CMPAK 3 1 2 D 3 2 G 1...
Description Silicon P Channel MOS FET High Speed Switching

File Size 26.18K  /  5 Page

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    2SJ586

HITACHI[Hitachi Semiconductor]
Part No. 2SJ586
OCR Text Z) 2nd.Edition. June 1999 Features * Low on-resistance R DS = 4.1 typ. (VGS = -4 V , I D = -50 mA) R DS = 6.0 typ. (VGS = -2.5 V , ID = -50 mA) * 2.5 V gate drive device. * Small package (CMPAK) Outline CMPAK 3 1 2 D 3 2 G ...
Description Silicon P Channel MOS FET High Speed Switching

File Size 40.34K  /  8 Page

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    2SJ587

HITACHI[Hitachi Semiconductor]
Part No. 2SJ587
OCR Text Z) 1st.Edition. June 1999 Features * Low on-resistance R DS = 8.5 typ. (VGS = -4 V , I D = -25 mA) R DS = 15 typ. (VGS = -2.5 V , ID = -10 mA) * 2.5 V gate drive device. * Small package (SMPAK) Outline SMPAK 3 1 2 D 3 2 G 1. ...
Description Silicon P Channel MOS FET High Speed Switching

File Size 38.71K  /  8 Page

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    2SJ588

HITACHI[Hitachi Semiconductor]
Part No. 2SJ588
OCR Text Z) 1st.Edition. June 1999 Features * Low on-resistance R DS =2.8 typ. (V GS = -10 V , I D = -50 mA) R DS =5.7 typ. (V GS = -4 V , I D = -50 mA) * 4 V gate drive device. Outline SPAK D 3 12 3 2 G 1. Source 2. Drain 3. Gate...
Description Silicon P Channel MOS FET High Speed Switching

File Size 25.19K  /  5 Page

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