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  10.16m Datasheet PDF File

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    SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. M485L1624FT0-CA2 M470L3224FT0-CB0 M470L3224FT0-CB3 M470L1624FT0-CB3 M470L1624FT0-CB0 M470L1624FT0-CA2
OCR Text ...dd sda scl vddspd vddid 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40 42 44 46 48 50 52 54 56 58 60 62 64 66 vref vss dq4 dq5 vdd ...16m x 64 non ecc module (m470l1624ft0) (populated as 1 bank of x16 ddr sdram module) ck0/1/2 ck0/1...
Description DDR SDRAM SODIMM

File Size 265.49K  /  20 Page

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    HYB39S256160CT-8A HYB39S256160CTL-8A HYB39S256800CTL-8A

Infineon Technologies AG
Part No. HYB39S256160CT-8A HYB39S256160CTL-8A HYB39S256800CTL-8A
OCR Text ...7.5 8 8 ns tac3 5.4 6 6 ns tck2 10 10 12 ns tac2 6 6 6 ns  multiple burst read with single write operation  automatic and controlled prech...16m x 4 sdram hyb 39s256400ct-8 pc100-222-620 p-tsop-54-2 (400mil) 125mhz 4b x 16m x 4 sdram hyb 39s...
Description x16 SDRAM
179 POS FR-4 PGA SOCKET
x8 SDRAM x8 SDRAM内存

File Size 291.86K  /  49 Page

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    K9F5608D0C K9F5608D0C-D K9F5608D0C-H K9F5608D0C-P K9F5608D0C-Y K9F5616U0C-Y K9F5608Q0C K9F5608Q0C-D K9F5608Q0C-H K9F5608

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K9F5608D0C K9F5608D0C-D K9F5608D0C-H K9F5608D0C-P K9F5608D0C-Y K9F5616U0C-Y K9F5608Q0C K9F5608Q0C-D K9F5608Q0C-H K9F5608U0C K9F5608U0C-D K9F5608U0C-F K9F5608U0C-H K9F5608U0C-P K9F5608U0C-V K9F5608U0C-Y K9F5616D0C K9F5616D0C-D K9F5616D0C-H K9F5616D0C-P K9F5616D0C-Y K9F5616Q0C K9F5616Q0C-D K9F5616Q0C-H K9F5616U0C K9F5616U0C-D K9F5616U0C-H K9F5616U0C-P K9F5616Q0C-HCB0 K9F5616Q0C-DCB0 K9F5616Q0C-DIB0 K9F5616Q0C-HIB0
OCR Text ...Erase Cycles - Data Retention : 10 Years * Command Register Operation * Intelligent Copy-Back * Unique ID for Copyright Protection * Power-O...16M-word(X16 device) physical space requires 24 addresses(X8 device) or 23 addresses(X16 device), th...
Description 32M x 8 Bit / 16M x 16 Bit NAND Flash Memory
512Mb/256Mb 1.8V NAND Flash Errata
32M x 8 Bit , 16M x 16 Bit NAND Flash Memory

File Size 679.73K  /  42 Page

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    SPANSION[SPANSION]
Part No. MB84SD23280FE-70 MB84SD23280E-70PBS MB84SD23280FA MB84SD23280FA-70PBS MB84SD23280FE
OCR Text ... = VIH VCCs = VCCs Max, tCYCLE =10 MHz CE1s = VIL, CE2s = VIH CE1s = 0.2 V, CE2s = VCCs - 0.2 V tCYCLE = 10 MHz tCYCLE = 1 MHz 5 MHz 1 MHz Value Min -1.0 -1.0 -- -- -- -- -- -- -- -- -- -- -- -- -- Flash SRAM Flash SRAM Flash SRAM -0.2 VCCf...
Description 64M (X16) FLASH MEMORY 8M (X16) SRAM

File Size 217.39K  /  40 Page

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    SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. KS7333 KSC7333 S5C7333A
OCR Text ...mal/hi-band, DVC correspondence 10 bit S1S2 format A/D signal input (new) 10 bit S1S2 signal output for DCP I/F Sub-pixel resolution animati...16M SDRAM) (new) DPCM compression and recovery for effective memory use (80%) (new) Movement adaptab...
Description  
Digital Image Stabilization and Digital Zoom Processor

File Size 282.68K  /  44 Page

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    OKI electronic components
OKI[OKI electronic componets]
Part No. MSM6791 MSM6791GS-2K
OCR Text ...Row Address Multiplexer Row.A11 10 TAS Address Multiplexer 12 A0 A1 A2 A3 A4 A5 A6 A7 R Column Address Counter Rerfresh Counter 12 A8 A9 A10...16M-bit DRAM connection. Set the connecting pattern of DRAM. M1 I M2 Connecting Mode Mode 0 Mode 1 M...
Description DRAM Interface IC

File Size 196.39K  /  10 Page

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    HYS64V16221GDL-8-C2

INFINEON TECHNOLOGIES AG
Part No. HYS64V16221GDL-8-C2
OCR Text ... clock access time 5.4 6 ns 1 10.99 infineon technologies 2 5.00 hys64v8200gdl/hys64v16220/1gdl 144 pin so-dimm sdram mo...16m x 64 hys64v16220/1gdl-7.5 8 8mx16 12 ba0, ba1 9 4k 64 ms 16m x 64 hys64v16220/1gdl-8 8 8mx16...
Description 16M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA144

File Size 135.36K  /  16 Page

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    LEADIS Technology
Part No. LDS285
OCR Text ...5 5 functional description 10 5.1 mpu interface ......................................................................................16m-color tft driver lds285 confidential leadis technology version 2.00 5.10.1 case 1...
Description Display Module

File Size 3,230.02K  /  218 Page

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    SAMSUNG[Samsung semiconductor]
Part No. K5L5628JTM-DH18 K5L5628JBM K5L5628JBM-DH18 K5L5628JTM
OCR Text ... Preliminary 1.0 November 10, 2004 Final Note : For more detailed features and specifications including FAQ, please refer to Samsun...16M x16) Synchronous Burst , Multi Bank NOR Flash / 128M Bit(8M x16) Synchronous Burst UtRAM FEAT...
Description 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash / 128M Bit(8M x16) Synchronous Burst UtRAM

File Size 1,565.84K  /  98 Page

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    http://
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K4H560438D-GCA2 K4H561638D-GLB3 K4H560838D-GLB3 K4H561638D-GCA2 K4H561638D-GLB0 K4H560438D-GLB0 K4H560438D-GLB3 K4H560838D-GLB0 K4H560838D-GCB3 K4H560838D-GCA2 K4H561638D-GLA2
OCR Text ...x8 a0-a9 16mx16 a0-a8 8.0 0 0.10 14.00 0.10 14.0 0.10 0.10 max 0.45 0.05 0.35 0.05 1.10 0.10 1 2 3 4 5 6 7 8 9 encapsulant a...16m x 16 32m x 8 64m x 4 - 4 - 256mb ddr sdram rev. 2.2 mar. ?03 bank select timing register ad...
Description DIODE ZENER SINGLE 200mW 33Vz 0.05mA-Izt 0.05 0.05uA-Ir 25 SOD-323 3K/REEL 的DDR 256Mb
DIODE ZENER SINGLE 500mW 28Vz 0.05mA-Izt 0.05 0.05uA-Ir 21.2 SOD-123 3K/REEL 的DDR 256Mb
DIODE ZENER SINGLE 200mW 30Vz 0.05mA-Izt 0.05 0.05uA-Ir 22.8 SOD-323 3K/REEL 的DDR 256Mb
DIODE ZENER SINGLE 500mW 36Vz 0.05mA-Izt 0.05 0.05uA-Ir 27.3 SOD-123 3K/REEL 的DDR 256Mb
DIODE ZENER SINGLE 150mW 36Vz 0.05mA-Izt 0.05 0.05uA-Ir 27.3 SOD-523 3K/REEL 的DDR 256Mb
DIODE ZENER SINGLE 150mW 33Vz 0.05mA-Izt 0.05 0.05uA-Ir 25 SOD-523 3K/REEL 的DDR 256Mb
DIODE ZENER SINGLE 200mW 36Vz 0.05mA-Izt 0.05 0.05uA-Ir 27.3 SOD-323 3K/REEL
DIODE ZENER SINGLE 200mW 28Vz 0.05mA-Izt 0.05 0.05uA-Ir 21.2 SOD-323 3K/REEL
DIODE ZENER SINGLE 500mW 39Vz 0.05mA-Izt 0.05 0.05uA-Ir 29.6 SOD-123 3K/REEL
DIODE ZENER SINGLE 200mW 39Vz 0.05mA-Izt 0.05 0.05uA-Ir 29.6 SOD-323 3K/REEL

File Size 293.31K  /  26 Page

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