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DYNEX[Dynex Semiconductor]
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| Part No. |
GP200MHS12
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| OCR Text |
...= 200A, VR = 50% VCES, dIF/dt = 2500a/s Test Conditions IC = 200A VGE = 15V VCE = 600V RG(ON) = RG(OFF) = 4.7 L ~ 100nH Min. Typ. 500 150 25 400 80 20 13 Max. 700 200 35 550 110 30 20 Units ns ns mJ ns ns mJ C
Tcase = 125C unless stated ... |
| Description |
Half Bridge IGBT Module
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| File Size |
98.36K /
10 Page |
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it Online |
Download Datasheet
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Dynex Semiconductor, Ltd.
DYNEX[Dynex Semiconductor]
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| Part No. |
GP200MKS12
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| OCR Text |
...= 200A, VR = 50% VCES, dIF/dt = 2500a/s Test Conditions IC = 200A VGE = 15V VCE = 600V RG(ON) = RG(OFF) = 4.7 L ~ 100nH Min. Typ. 500 150 25 400 80 20 20 Max. 700 200 35 550 110 30 30 Units ns ns mJ ns ns mJ C
Tcase = 125C unless stated ... |
| Description |
IGBT Chopper Module Preliminary Information 200 A, 1200 V, N-CHANNEL IGBT
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| File Size |
126.08K /
10 Page |
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it Online |
Download Datasheet |
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DYNEX[Dynex Semiconductor]
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| Part No. |
GP200MLS12
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| OCR Text |
...= 200A, VR = 50% VCES, dIF/dt = 2500a/s Test Conditions IC = 200A VGE = 15V VCE = 600V RG(ON) = RG(OFF) = 4.7 L ~ 100nH Min. Typ. 500 150 25 400 80 20 20 Max. 700 200 35 550 110 30 30 Units ns ns mJ ns ns mJ C
Tcase = 125C unless stated ... |
| Description |
IGBT Chopper Module Preliminary Information
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| File Size |
126.55K /
10 Page |
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it Online |
Download Datasheet |
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DYNEX[Dynex Semiconductor]
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| Part No. |
GP201MHS18
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| OCR Text |
...= 200A, VR = 50% VCES, dIF/dt = 2500a/s Test Conditions IC = 200A VGE = 15V VCE = 900V RG(ON) = RG(OFF) = 4.7 L ~ 100nH Min. Typ. 500 250 90 450 90 70 50 Max. 650 350 180 600 120 100 80 Units ns ns mJ ns ns mJ C
Tcase = 125C unless state... |
| Description |
Low VCE(SAT) Half Bridge IGBT Module
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| File Size |
128.70K /
10 Page |
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it Online |
Download Datasheet |
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Dynex Semiconductor Ltd.
DYNEX[Dynex Semiconductor]
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| Part No. |
GP401DDM18
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| OCR Text |
...= 400A, VR = 50% VCES, dIF/dt = 2500a/s Test Conditions IC = 400A VGE = 15V VCE = 900V RG(ON) = RG(OFF) = 2.2 L ~ 100nH Min. Typ. 1010 450 250 600 310 200 110 300 190 Max. 1200 500 320 800 400 270 150 Units ns ns mJ ns ns mJ C A mJ
4/7
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| Description |
OPTOISOLATOR W/BASE SMD
Hi-Reliability Dual Switch Low VCE(SAT) IGBT Module Advance Information
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| File Size |
94.75K /
7 Page |
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it Online |
Download Datasheet |
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DYNEX[Dynex Semiconductor]
Dynex Semiconductor, Ltd.
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| Part No. |
GP401DDS18
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| OCR Text |
...= 400A, VR = 50% VCES, dIF/dt = 2500a/s Test Conditions IC = 400A VGE = 15V VCE = 900V RG(ON) = RG(OFF) = 2.2 L ~ 100nH Min. Typ. 1010 450 250 600 310 200 110 300 190 Max. 1200 500 320 800 400 270 150 Units ns ns mJ ns ns mJ C A mJ
4/10
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| Description |
Low VCE(SAT) Dual Switch IGBT Module Preliminary Information
Low VCE(SAT) Dual Switch IGBT Module Preliminary Information 400 A, 1800 V, N-CHANNEL IGBT
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| File Size |
159.60K /
11 Page |
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it Online |
Download Datasheet |
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LITTELFUSE[Littelfuse]
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| Part No. |
SL0902A420 SL0902A090 SL0902A230 SL0902A350
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| OCR Text |
...robust and are able to divert a 2500a pulse without destruction. For AC Power Cross of long duration, overcurrent protection is recommended.
FEATURES
* RoHS compliant * GHz working frequency * Excellent stability on multiple pulse duty ... |
| Description |
High Performance Beta Range
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| File Size |
144.29K /
2 Page |
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it Online |
Download Datasheet |
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Price and Availability
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