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  52.0v. Datasheet PDF File

For 52.0v. Found Datasheets File :: 329    Search Time::1.532ms    
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    FS6M07652 FS6M07652RTCTU FS6M07652RTCYDT FS6M07652RTC

FAIRCHILD[Fairchild Semiconductor]
Part No. FS6M07652 FS6M07652RTCTU FS6M07652RTCYDT FS6M07652RTC
OCR Text ...V, ID=250A VDS=650V, VGS=0V VDS=520V VGS=0V, TC=125C VGS=10V, ID=1.8A VDS=50V, ID=1.8A VGS=0V, VDS=25V, f = 1MHz VDD=325V, ID=6.5A (MOSFET switching time is essentially independent of operating temperature) VGS=10V, ID=6.5A, VDS=520V (MOSFE...
Description    Fairchild Power Switch(FPS)
7A/650V 70KHz Power Switch

File Size 542.04K  /  10 Page

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    HFU2N65

SemiHow Co.,Ltd.
Part No. HFU2N65
OCR Text ... ? q g total gate charge v ds = 520v, i d = 1.8 a , v gs = 10 v (note 4,5) -- 9.0 11.5 nc q gs gate - source charge -- 1.9 -- nc q gd gate - drain charge -- 3.8 -- nc switching characteristics source - drain diode maximum ratings and chara...
Description 650V N-Channel MOSFET

File Size 845.43K  /  7 Page

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    Xian Semipower Electronic Technology Co., Ltd.
Xian Semipower Electron...
Part No. SWP12N65 SW12N65 SWF12N65
OCR Text ...650v, v gs =0v - - 1 ua v ds =520v, t c =125 o c - - 50 ua gss gate to source leak age current, forward v gs =30v, v ds =0v - - 100 na v gs =-30v, v ds =0v - - -100 na gate to source leak age current, reverse on characteristics v gs(...
Description N-channel MOSFET
   N-channel MOSFET

File Size 1,029.78K  /  7 Page

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    HFS10N65S

SemiHow Co.,Ltd.
Part No. HFS10N65S
OCR Text ... ? q g total gate charge v ds = 520v, i d = 9.2 a, v gs = 10 v (note 4,5) -- 29 38 nc q gs gate - source charge -- 6.8 -- nc q gd gate - drain charge -- 10.3 -- nc switching characteristics source - drain diode maximum ratings and character...
Description 650V N-Channel MOSFET

File Size 877.94K  /  7 Page

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    SPGN0365A SPGP0365A

SemiHow Co.,Ltd.
Part No. SPGN0365A SPGP0365A
OCR Text ...ds = 325v v ds = 130v v ds = 520v * note : i d = 3.0a v gs , gate-source voltage [v] q g , total gate charge [nc] 10 -1 10 0 10 1 0 200 400 600 800 1000 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd * ...
Description The SemiHow Power Switch product family is specially designed for an off-line SMPS with minimal external components.

File Size 1,548.36K  /  11 Page

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    HFP4N65

SemiHow Co.,Ltd.
Part No. HFP4N65
OCR Text ... ? q g total gate charge v ds = 520v, i d = 3.6 a, v gs = 10 v (note 4,5) -- 15 20 nc q gs gate - source charge -- 3.2 -- nc q gd gate - drain charge -- 6.8 -- nc switching characteristics source - drain diode maximum ratings and characteri...
Description 650V N-Channel MOSFET

File Size 771.48K  /  8 Page

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    http://
Part No. SSD02N65
OCR Text ...nt i dss - - 2 a v ds =520v, v gs =0 static drain-source on-resistance 2 r ds(on) - 6.3 8 v gs =10v, i d =1a total gate charge q g - 8 - nc i d =1a v ds =520v v gs =10v gate-source charge q gs - 2.56 ...
Description 2A , 650V , RDS(ON) 8 N-Ch Enhancement Mode Power MOSFET

File Size 1,443.51K  /  4 Page

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    Fairchild Semiconductor Corporation
Part No. FS8S0965RCBYDTU
OCR Text ...650v, v gs =0v - - 200 a v ds =520v v gs =0v, t c =125 c - - 300 a static drain source on resistance (1) r ds(on) v gs =10v, i d =1.8a - 1.0 1.2 ? forward transconductance gfs v ds =50v, i d =1.8a - 8 - mho input capacitance ciss v gs ...
Description Fairchild Power Switch(FPS)

File Size 2,040.03K  /  20 Page

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    Advanced Power Electronics
Part No. AP2761P-A
OCR Text ...c q gs gate-source charge v ds =520v - 10 - nc q gd gate-drain ("miller") charge v gs =10v - 15 - nc t d(on) turn-on delay time 3 v dd =320v - 16 - ns t r rise time i d =10a - 20 - ns t d(off) turn-off delay time r g =10 , v gs =10v - 82 - ...
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET

File Size 89.16K  /  4 Page

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