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  c-mos Datasheet PDF File

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    IRF[International Rectifier]
Part No. IRIS-G6651
OCR Text ...nput voltage for control part O.C.P/F.B Pin voltage Power dissipation for MOSFET *3 Power dissipation for control part (Control IC) *4 Inter...MOS FET A.S.O curve *2 MOS FET Tch-EAS curve *3 Refer to MOS FET Ta-PD1 curve *4 Refer to TF-PD2 cur...
Description IRIS-G6651 is a hybrid IC consists from power MOSFET and a controller IC
IRIS-G6651 is a hybrid IC consists from power MOSFET and a controller IC

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    Microsemi
Part No. APT8020LLLG
OCR Text c 7-2004 maximum ratings all ratings: t c = 25c unless otherwise specified. g d s caution: these devices are sensitive to electrostati...mos 7 ? is a new generation of low loss, high voltage, n-channel enhancement mode power mosfets. ...
Description MOSFET

File Size 242.17K  /  5 Page

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    Microsemi
Part No. APT6017LLLG
OCR Text c = 25c unless otherwise specified. caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be ...mos 7 ? is a new generation of low loss, high voltage, n-channel enhancement mode power mosfets. ...
Description MOSFET

File Size 152.32K  /  5 Page

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    Microsemi
Part No. APT6013LLLG APT6013B2LLG
OCR Text c 9-2004 maximum ratings all ratings: t c = 25c unless otherwise specified. caution: these devices are sensitive to electrostatic disc...mos 7 ? is a new generation of low loss, high voltage, n-channel enhancement mode power mosfets. ...
Description MOSFET

File Size 149.60K  /  5 Page

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    Microsemi
Part No. APT20M20LLLG
OCR Text c = 25c unless otherwise specified. caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be ...mos 7 ? is a new generation of low loss, high voltage, n-channel enhancement mode power mosfets. ...
Description MOSFET

File Size 151.01K  /  5 Page

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    IRF[International Rectifier]
Part No. IRIS-G6653
OCR Text ...nput voltage for control part O.C.P/F.B Pin voltage Power dissipation for MOSFET *3 Power dissipation for control part (Control IC) *4 Inter...MOS FET A.S.O curve *2 MOS FET Tch-EAS curve *3 Refer to MOS FET Ta-PD1 curve *4 Refer to TF-PD2 cur...
Description INTEGRATED SWITCHER

File Size 268.47K  /  7 Page

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    Microsemi
Part No. APT8056BVRG
OCR Text ...ds = 0.8 v dss , v gs = 0v, t c = 125 c) gate-source leakage current (v gs = 30v, v ds = 0v) gate threshold voltage (v ds = v gs ...mos v ? is a new generation of high voltage n-channel enhancement mode power mosfets. this new tech...
Description MOSFET

File Size 47.47K  /  4 Page

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    Microsemi
Part No. APT8014L2LLG
OCR Text ...t (v ds = 640v, v gs = 0v, t c = 125c) gate-source leakage current (v gs = 30v, v ds = 0v) gate threshold voltage (v ds = v gs , i ...mos 7 ? is a new generation of low loss, high voltage, n-channel enhancement mode power mosfets. ...
Description MOSFET

File Size 85.28K  /  5 Page

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    Microsemi
Part No. APT6025BLLG
OCR Text c = 25c unless otherwise specified. caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be ...mos 7 ? is a new generation of low loss, high voltage, n-channel enhancement mode power mosfets. ...
Description MOSFET

File Size 151.40K  /  5 Page

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    Microsemi
Part No. APT6021BLLG
OCR Text c 9-2004 maximum ratings all ratings: t c = 25c unless otherwise specified. g d s caution: these devices are sensitive to electrostati...mos 7 ? is a new generation of low loss, high voltage, n-channel enhancement mode power mosfets. ...
Description MOSFET

File Size 155.05K  /  5 Page

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