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				International Rectifier
Part No.	IRLML5203TRPBF
OCR Text	...ssing techniques to achieve the extremely low on-resistance per silicon area. this benefit provides the designer with an extremely efficient device for use in battery and load management applications. a thermally enhanced large pad leadfra...
Description	-30V Single P-Channel HEXFET Power MOSFET in a Micro 3 package
File Size	236.72K / 10 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRLML5203GPBF IRLML5203GTRPBF
OCR Text	...ssing techniques to achieve the extremely low on-resistance per silicon area. this benefit provides the designer with an extremely efficient device for use in battery and load management applications. a thermally enhanced large pad leadfra...
Description	-30V Single P-Channel Lead Free HEXFET Power MOSFET in a Halogen Free Micro3 package
File Size	202.69K / 9 Page	View it Online	Download Datasheet

				Level One
Part No.	FCS-1131-18 CAS-1400
OCR Text	...ge) to enhance visibility under extremely bright or dark environments - features 3dnr (3-dimension noise reduction) to produce extremely clear picture quality even under low light condition - removable ir-cut filter for day and night survei...
Description	Fixed IP Network Camera, 2-Megapixel, 802.3af PoE
File Size	402.66K / 5 Page	View it Online	Download Datasheet

				ZP Semiconductor
Part No.	IRLML2502TRPBF
OCR Text	...rocessing techniques to achieve extremely low on-resistance per silicon area. this benefit, combined with the fast switching speed and ruggedized device design that hexfet ? power mosfets are well known for, provides the designer with an...
Description	HEXFETPower MOSFET
File Size	319.49K / 2 Page	View it Online	Download Datasheet

				SiTime Corp.
Part No.	SIT1576
OCR Text	... 1000c. episeal creates an extremely strong, clean, vacuum chamber that encapsulate s the mems resonator and ensures the best performance and reliability. during episeal, a poly silicon cap is grown on top of the reso...
Description	1.2mm2 uPower, Low-Jitter, 1Hz - 2.5 MHz Super-TCXO
File Size	992.51K / 10 Page	View it Online	Download Datasheet

				SiTime Corp.
Part No.	SIT1568
OCR Text	...1000c. episeal creates an extremely strong, clean, vacuum chamber that encapsulates the mems resonator and ensures the best performance and reliability. during episeal, a poly silicon cap is gro wn on top ...
Description	1.2mm2Micropower, 5 ppm, 32.768 kHz TCXO with In-System Auto-Calibration
File Size	825.66K / 12 Page	View it Online	Download Datasheet

				SiTime Corp.
Part No.	SIT1566
OCR Text	... 1000c. episeal creates an extremely strong, clean, vacuum chamber that encapsulates the mems resonator and e nsures the best performance and reliability. during episeal, a poly silicon cap is grown on top of the reso...
Description	1.2mm2 uPower, Low-Jitter, 3 & 5 ppm, 32.768 kHz Super-TCXO
File Size	798.93K / 9 Page	View it Online	Download Datasheet

				SiTime Corp.
Part No.	SIT1552
OCR Text	... 1000c. episeal creates an extremely strong, clean, vacuum chamber that encapsulates the mems resonator and ensures the best performance and reliability. during episeal, a poly silicon cap is grown on top of the reso...
Description	Smallest (1.2mm2), Smallest (1.2mm2), Ultra-Low Power, 32.768 kHz
File Size	682.68K / 11 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	74LVC1G79GX 74LVC1G79GF
OCR Text	... 40 ? cto+125 ? c xson6 plastic extremely thin small outline package; no leads; 6 terminals; body 1 ? 1.45 ? 0.5 mm sot886 74lvc1g79gf ? 40 ? c to +125 ? c xson6 plastic extremely thin small outline package; no leads; 6 terminals; body ...
Description	Single D-type flip-flop; positive-edge trigger
File Size	369.88K / 21 Page	View it Online	Download Datasheet

				Advanced Linear Devices
Part No.	ALD210808PCL ALD210808APCL ALD210808ASCL ALD210808SCL
OCR Text	...ages can be built to operate at extremely low supply/bias voltage levels. for example, a nanopower input amplifier stage operating at less than 1.0v supply voltage has been successfully built with these devices. ald210808a epad mosfets feat...
Description	PRECISION N-CHANNEL EPAD MOSFET ARRAY QUAD HIGH DRIVE MATCHED PAIR
File Size	111.36K / 12 Page	View it Online	Download Datasheet

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Price & Availability of extremely

Part #	Manufacturer	Description	Price	BuyNow Qty.
UPM1J470MPD UPM1J470MPD	Nichicon Corporation	Aluminum Electrolytic Capacitors - Radial Leaded 63volts 47uF AEC-Q200	100: USD0.139 500: USD0.137 1000: USD0.134 1800: USD0.131 3000: USD0.129 6000: USD0.126 9000: USD0.124	48900
UPM1H101MPD6 UPM1H101MPD6	Nichicon Corporation	Aluminum Electrolytic Capacitors - Radial Leaded 50volts 100uF AEC-Q200	100: USD0.237 200: USD0.233 500: USD0.228 1000: USD0.224 1800: USD0.209 3600: USD0.205 9000: USD0.201	98500
UPM1H221MPD UPM1H221MPD	Nichicon Corporation	Aluminum Electrolytic Capacitors - Radial Leaded 50volts 220uF AEC-Q200	100: USD0.244 500: USD0.239 1000: USD0.234 4000: USD0.23	600
RCWE1210R330FKEA RCWE1210R330FKEA	Vishay Intertechnologies	Current Sense Resistors - SMD 1watt .33ohms 1% 100ppm	5000: USD0.112	80000
RCWE1210R750FKEA RCWE1210R750FKEA	Vishay Intertechnologies	Current Sense Resistors - SMD 1watt .75ohms 1% 100ppm	5000: USD0.114 10000: USD0.112 15000: USD0.109 20000: USD0.097 25000: USD0.096 40000: USD0.094	35000