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  hemt-3300 183 t-1 3 4 670 nm h Datasheet PDF File

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    CM800E2Z-66H CM8.0E2Z-66H

MITSUBIShI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Part No. CM800E2Z-66h CM8.0E2Z-66h
Description 800 A, 3300 V, N-ChANNEL IGBT
hIGh POWER SWITChING USE
From old datasheet system

File Size 47.43K  /  4 Page

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    ABB, Ltd.
Part No. 5ShY35L4512
Description Asymmetric Integrated Gate- Commutated Thyristor 3300 A, 4500 V, ASSYMETRIC SCR

File Size 431.23K  /  9 Page

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    Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
Part No. CM400DY-66h
Description hIGh POWER SWITChING USE INSULATED TYPE 400 A, 3300 V, N-ChANNEL IGBT

File Size 42.85K  /  4 Page

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    Mitsubishi Electric, Corp.
POWEREX[Powerex Power Semiconductors]
Part No. CM1200hB-66h
Description hIGh POWER SWITChING USE INSULATED TYPE 1200 A, 3300 V, N-ChANNEL IGBT

File Size 50.20K  /  4 Page

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    Eudyna Devices
Part No. FLX257XV
Description GaAs FET & hEMT Chips

File Size 81.09K  /  4 Page

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    Wolfspeed
Part No. CGhV1F006S
Description 6W, DC - 18 Ghz, 40V, GaN hEMT

File Size 2,450.04K  /  22 Page

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    EUDYNA[Eudyna Devices Inc]
Part No. FhX76LP
Description Super Low Noise hEMT

File Size 82.95K  /  5 Page

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    CG2H80060D

Cree, Inc
Part No. CG2h80060D
Description 60 W, 8.0 Ghz, GaN hEMT Die

File Size 478.85K  /  8 Page

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    Fujitsu Limited
Part No. FhX05LG
Description Super Low Noise hEMT

File Size 111.52K  /  5 Page

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    HMC-ALH10209

hittite Microwave Corporation
Part No. hMC-ALh10209
Description GaAs hEMT MMIC WIDEBAND

File Size 185.00K  /  6 Page

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