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For irrm Found Datasheets File :: 7610    Search Time::4.453ms    
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    APT5014BFLL APT5014SFLL

Advanced Power Technology
Part No. APT5014BFLL APT5014SFLL
OCR Text ...Peak Diode Recovery t rr Qrr irrm Reverse Recovery Time (IS = -ID [Cont.], di/dt = 100A/s) Reverse Recovery Charge (IS = -ID [Cont.], di/dt = 100A/s) Peak Recovery Current (IS = -ID [Cont.], di/dt = 100A/s) AL IC HN EC ION E T AT N...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

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    APT5016 APT5016BFLL APT5016SFLL

ADPOW[Advanced Power Technology]
Part No. APT5016 APT5016BFLL APT5016SFLL
OCR Text ...Peak Diode Recovery t rr Qrr irrm Reverse Recovery Time (IS = -ID [Cont.], di/dt = 100A/s) Reverse Recovery Charge (IS = -ID [Cont.], di/dt = 100A/s) Peak Recovery Current (IS = -ID [Cont.], di/dt = 100A/s) AL IC HN EC ION E T AT N...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 53.90K  /  2 Page

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    APT5017BVFR

ADPOW[Advanced Power Technology]
Part No. APT5017BVFR
OCR Text ...[Cont.]) 5 dv/ t rr Q rr irrm Reverse Recovery Time (IS = -ID [Cont.], di/dt = 100A/s) Reverse Recovery Charge (IS = -ID [Cont.], di/dt = 100A/s) Peak Recovery Current (IS = -ID [Cont.], di/dt = 100A/s) 250 525 1.6 6.0 13 21 ...
Description POWER MOS V 500V 30A 0.170 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 62.45K  /  4 Page

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    APT5018BFLL APT5018SFLL

ADPOW[Advanced Power Technology]
Part No. APT5018BFLL APT5018SFLL
OCR Text ...Peak Diode Recovery t rr Qrr irrm Reverse Recovery Time (IS = -ID [Cont.], di/dt = 100A/s) Reverse Recovery Charge (IS = -ID [Cont.], di/dt = 100A/s) Peak Recovery Current (IS = -ID [Cont.], di/dt = 100A/s) AL IC HN EC ION E T AT N...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS

File Size 53.84K  /  2 Page

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    APT5020BVFR

ADPOW[Advanced Power Technology]
Part No. APT5020BVFR
OCR Text ...[Cont.]) 5 dv/ t rr Q rr irrm Reverse Recovery Time (IS = -ID [Cont.], di/dt = 100A/s) Reverse Recovery Charge (IS = -ID [Cont.], di/dt = 100A/s) Peak Recovery Current (IS = -ID [Cont.], di/dt = 100A/s) 250 500 1.3 4.5 12 18 ...
Description POWER MOS V 500V 26A 0.200 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 61.42K  /  4 Page

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    APT5020SVFR APT5020

Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
Part No. APT5020SVFR APT5020
OCR Text ...[Cont.]) 5 dv/ t rr Q rr irrm Reverse Recovery Time (IS = -ID [Cont.], di/dt = 100A/s) Reverse Recovery Charge (IS = -ID [Cont.], di/dt = 100A/s) Peak Recovery Current (IS = -ID [Cont.], di/dt = 100A/s) 250 500 1.3 4.5 12 18 ...
Description 24 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 500V 26A 0.200 Ohm

File Size 64.36K  /  4 Page

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    APT5024BFLL APT5024SFLL APT10078BFLL APT10078SFLL

ADPOW[Advanced Power Technology]
Part No. APT5024BFLL APT5024SFLL APT10078BFLL APT10078SFLL
OCR Text ...Peak Diode Recovery t rr Qrr irrm Reverse Recovery Time (IS = -ID [Cont.], di/dt = 100A/s) Reverse Recovery Charge (IS = -ID [Cont.], di/dt = 100A/s) Peak Recovery Current (IS = -ID [Cont.], di/dt = 100A/s) AL IC HN EC ION E T AT N...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 58.44K  /  2 Page

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    APT5024BVFR

Advanced Power Technology Ltd.
Part No. APT5024BVFR
OCR Text ...[Cont.]) 5 dv/ t rr Q rr irrm Reverse Recovery Time (IS = -ID [Cont.], di/dt = 100A/s) Reverse Recovery Charge (IS = -ID [Cont.], di/dt = 100A/s) Peak Recovery Current (IS = -ID [Cont.], di/dt = 100A/s) 250 450 1.8 6.0 14 24 ...
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 500V 22A 0.240 Ohm

File Size 61.69K  /  4 Page

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    APT50GF120JRD

ADPOW[Advanced Power Technology]
Part No. APT50GF120JRD
OCR Text ...t Change Through Zero Crossing. irrm - Peak Reverse Recovery Current. 1 4 6 Zero 5 trr - Reverse Recovery Time Measured from Point of IF 3 Current Falling Through Zero to a Tangent Line { 6 diM/dt} Extrapolated Throu...
Description Fast IGBT & FRED 1200V 75A
The Fast IGBT is a new generation of high voltage power IGBTs.
The Fast IGBT⑩ is a new generation of high voltage power IGBTs.

File Size 51.80K  /  4 Page

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    APT50GF60B2RD APT50GF60LRD

ADPOW[Advanced Power Technology]
Advanced Power Technology, Ltd.
Part No. APT50GF60B2RD APT50GF60LRD
OCR Text ...tage Drop vs Forward Current 50 irrm, REVERSE RECOVERY CURRENT (AMPERES) TJ = 100C VR = 350V 0 0 10 50 100 500 1000 diF /dt, CURRENT SLEW RATE (AMPERES/SEC) Figure 2, Reverse Recovery Charge vs Current Slew Rate 2.0 Kf, DYNAMIC PA...
Description Fast IGBT & FRED 600V 80A
The Fast IGBT⑩ is a new generation of high voltage power IGBTs.
The Fast IGBT is a new generation of high voltage power IGBTs.
Thin Film RF/Microwave Capacitor; Capacitance:3.9pF; Capacitance Tolerance: /- 0.1 pF; Working Voltage, DC:50V; Package/Case:0603; Leaded Process Compatible:Yes; Operating Temp. Max:125 C; Operating Temp. Min:-55 C ⑩的快速IGBT是一种高压IGBT的新一代

File Size 112.47K  /  7 Page

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