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  MR856-GT3 Datasheet PDF File

For MR856-GT3 Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | <6> | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    SENSITRON SEMICONDUCTOR
Part No. SA110-G SA24-GT3 SA13C-T3 SA10A-T3
Description 500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-15
500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-15

File Size 272.27K  /  5 Page

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HUA FENG CIRCUIT





    GT30J322

Toshiba Corporation
Toshiba Semiconductor
Part No. GT30J322
Description N CHANNEL MOS TYPE ( THE 4TH GENERATION CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS)

File Size 255.96K  /  5 Page

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    TOSHIBA
Part No. GT35J321
Description IGBT for soft switching applications

File Size 302.02K  /  6 Page

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    Toshiba
Part No. GT35J321
Description Fourth Generation IGBT

File Size 313.79K  /  6 Page

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    TOSHIBA
Part No. GT30J322
Description INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT THE 4TH GENERATION CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS

File Size 263.32K  /  6 Page

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    Toshiba
Part No. GT30J126
Description Silicon N-Channel IGBT

File Size 203.30K  /  6 Page

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    GT30J122

Toshiba Corporation
Toshiba Semiconductor
Part No. GT30J122
Description 4TH GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING

File Size 493.66K  /  6 Page

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    GT30J341

Toshiba Semiconductor
Part No. GT30J341
Description Discrete IGBTs Silicon N-Channel IGBT

File Size 296.92K  /  10 Page

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    GT30J101

TOSHIBA[Toshiba Semiconductor]
Part No. GT30J101
Description Silicon N Channel IGBT

File Size 290.01K  /  6 Page

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    TOSHIBA
Part No. GT30J301
Description Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control Applications

File Size 322.97K  /  7 Page

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Part: MR856
Maker: ON/TSC
Pack: DO-201
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Unit price for :
    50: $0.16
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