oc-12 3 pdf Datasheet P6 Full Text Search --- IC-ON-LINE


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oc-12 3 Datasheet PDF File

For oc-12 3 Found Datasheets File :: 25978 Search Time::1.797ms
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				IRF[International Rectifier]
Part No.	IRF1310N
OCR Text	... 4.5V 20us PULSE WIDTH TJ = 25 oC 1 10 100 1 0.1 1 0.1 20us PULSE WIDTH TJ = 175 o C 1 10 100 VDS , Drain-to-Source Voltage (...12 8 1000 Coss Crss 4 500 0 1 10 100 0 0 20 40 60 FOR TEST CIRCUIT SEE FIGUR...
Description	Power MOSFET(Vdss=100V/ Rds(on)=0.036ohm/ Id=42A) Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A)
File Size	92.91K / 8 Page	View it Online	Download Datasheet

				HARRIS SEMICONDUCTOR INTERSIL[Intersil Corporation] Intersil, Corp.
Part No.	IRF234 IRF235 IRF236 IRF237
OCR Text	...0 300 260 UNITS V V A A A V W W/oC mJ oC oC oC CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent da...12) VDD = 125V, ID 8.1A, RG = 12, RL = 1.1 VGS = 10V, (Figures 17, 18) MOSFET Switching Times are E...
Description	8.1A and 6.5A/ 275V and 250V/ 0.45 and 0.68 Ohm/ N-Channel Power MOSFETs 8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs 6.5 A, 275 V, 0.68 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
File Size	68.51K / 7 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	IRF244 IRF245 IRF246 IRF247
OCR Text	...0 300 260 UNITS V V A A A V W W/oC mJ oC oC oC CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent da...12) VDD = 125V, ID 14A, RG = 9.1, RL = 8.9 (Figures 17, 18) MOSFET Switching Times are Essentially ...
Description	14A and 13A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs 14A and 13A/ 275V and 250V/ 0.28 and 0.34 Ohm/ N-Channel Power MOSFETs
File Size	70.04K / 7 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF3415L IRF3415S
OCR Text	... 4.5V 20us PULSE WIDTH TJ = 25 oC 1 10 100 4.5V 20us PULSE WIDTH TJ = 175 o C 1 10 100 10 10 VDS , Drain-to-Source Voltage (...12 8 2000 Coss Crss 1000 4 0 1 10 100 0 0 40 80 FOR TEST CIRCUIT SEE FIGURE ...
Description	Power MOSFET(Vdss=150V/ Rds(on)=0.042ohm/ Id=43A) Power MOSFET(Vdss=150V, Rds(on)=0.042ohm, Id=43A) Power MOSFET(Vdss=150V Rds(on)=0.042ohm Id=43A)
File Size	152.65K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF3415
OCR Text	... TJ , Junction Temperature ( oC) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature IRF3415...12 8 2000 Coss Crss 1000 4 0 1 10 100 0 0 40 80 FOR TEST CIRCUIT SEE FIGURE ...
Description	Power MOSFET(Vdss=150V/ Rds(on)=0.042ohm/ Id=43A) Power MOSFET(Vdss=150V, Rds(on)=0.042ohm, Id=43A) Power MOSFET(Vdss=150V Rds(on)=0.042ohm Id=43A)
File Size	90.69K / 8 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	IRF530A
OCR Text	...5 V 5.0 V Bottom : 4.5 V 175 oC 100 25 oC @ Notes : 1. V = 0 V GS - 55 oC 2. V = 40 V DS 3. 250 s Pulse Test 6 8 10 10 0 @ Notes...12 . 14 . 16 . 18 . 20 . 22 . 1 5 oC 7 2 oC 5 1 -1 0 04 . 06 . ID , Drain Current [A] VSD ,...
Description	N-CHANNEL POWER MOSFET Advanced Power MOSFET
File Size	253.11K / 7 Page	View it Online	Download Datasheet

				SGS Thomson Microelectronics STMicroelectronics
Part No.	IRF530FI IRF530 3003
OCR Text	...CAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbo l V (BR)DSS I DSS IGSS Parameter Drain-source Breakdown Voltage Te...12 Max. 4 0.16 Unit V A V DS > ID(o n) x R DS(on )ma x V GS = 10 V DYNAMIC Symbo l g f s () ...
Description	From old datasheet system N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
File Size	46.69K / 6 Page	View it Online	Download Datasheet

				SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics]
Part No.	IRF530FP 5758
OCR Text	...CAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol V (BR)DSS I DSS I GSS Parameter Drain-source Breakdown Voltage Te...12 10 Max. 4 0.16 Unit V A Static Drain-source On V GS = 10V I D = 8 A Resistance On State Drain...
Description	N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR From old datasheet system
File Size	76.48K / 5 Page	View it Online	Download Datasheet

				Samsung semiconductor International Rectifier Intersil Corporation
Part No.	IRF9150
OCR Text	...o 150 300 UNITS V V A A A V W W/oC mJ A oC oC Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . ....12.5 (Figure 12) VDD = -50V, ID -25A, RG = 6.8, RL = 2.0, (Figures 17, 18) MOSFET Switching Times a...
Description	-25A, -100V, 0.150 Ohm, P-Channel Power MOSFET
File Size	56.86K / 7 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	IRF9520 FN2281
OCR Text	...0 300 260 UNITS V V A A A V W W/oC mJ oC oC oC Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . ...12) VDD = 0.5 x Rated BVDSS, ID -6.0A, RG = 50 , RL = 7.7 for VDSS = 50 MOSFET Switching Times are ...
Description	6A, 100V, 0.600 Ohm, P-Channel Power MOSFET(6A, 100V, 0.600 惟, P娌?????MOS?烘?搴??) From old datasheet system 6A 100V 0.600 Ohm P-Channel Power MOSFET 6A/ 100V/ 0.600 Ohm/ P-Channel Power MOSFET
File Size	57.36K / 7 Page	View it Online	Download Datasheet

For oc-12 3 Found Datasheets File :: 25978 Search Time::1.797ms
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