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1N6041 PCF8593P L8C2041 05100 M4S63XBJ BTLRBC FOD852 GJ9973
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    PROMOS TECHNOLOGIES INC
Part No. V58C2256164SCE5B
OCR Text ...clock enable cs chip select ras row address strobe cas column address strobe we write enable dqs (udqs, ldqs) data strobe (bidirectional) a 0 ?a 12 address inputs ba0, ba1 bank select dq?s data input/output dm (udm, ldm) data mask v dd powe...
Description 16M X 16 DDR DRAM, 0.65 ns, PDSO66

File Size 917.36K  /  61 Page

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    INTEGRATED SILICON SOLUTION INC
Part No. IS42SM32400E-75EBLI
OCR Text ...k edge internal bank for hiding row access and pre - ? charge programmable cas latency: 2, 3 ? programmable burst length: 1, 2, 4, 8, and full ? page programmable burst sequence: ? sequential and interleave ? auto refresh (cbr) ? tcs...
Description 4M X 32 SYNCHRONOUS DRAM, 5.4 ns, PBGA90

File Size 764.69K  /  26 Page

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    ADV7129 ADV7129KS

AD[Analog Devices]
Part No. ADV7129 ADV7129KS
OCR Text ...PQFP PIN CONFIGURATION 228 229 row C 153 152 ADV7129 row D PQFP TOP VIEW (Not to Scale) row B PIN NO. 1 IDENTIFIER 304 1 row A 76 77 CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000...
Description 192-Bit, 360 MHz True-Color Video DAC with Onboard PLL

File Size 381.53K  /  20 Page

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    HYS72T64001HP

Qimonda AG
Part No. HYS72T64001HP
OCR Text ... ras-cas-delay t rcd 15 ns min. row precharge time t rp 15 ns min. row active time t ras 45 ns min. row cycle time t rc 60 ns internet data sheet rev. 1.01, 2006-09 4 03292006-zzhp-pr83 hys72t[32/64]xxxhp?[3s/3.7]?a registered ddr2 sdra...
Description 240-Pin Registered DDR2 SDRAM Modules

File Size 1,025.25K  /  53 Page

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Part No. K4E151611C-TC50
OCR Text ...of memory cells within the same row, so called hyper page mode. power supply voltage (+5.0v or +3.3v), refresh cycle (1k ref. or 4k ref.), access time (-45, -5 0 or -6 0 ), power consumption(normal or low power) and package type(soj or tso...
Description 1M X 16 EDO DRAM, 50 ns, PDSO44

File Size 558.18K  /  35 Page

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    HYB18TC256800AF-3.7

QIMONDA AG
Part No. HYB18TC256800AF-3.7
OCR Text ...t address bus is used to convey row, column and bank address information in a ras -cas multiplexing style. the ddr2 device operates with a 1.8 v 0.1 v power supply. an auto-refresh and self-refresh mode is provided along with various pow...
Description 32M X 8 DDR DRAM, 0.5 ns, PBGA60

File Size 1,885.92K  /  60 Page

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    HYNIX SEMICONDUCTOR INC
Part No. HMT325S6BFR6C-H9
OCR Text ...8k/64ms 8k/64ms 8k/64ms 8k/64ms row address a0-a13 a0-a13 a0-a14 a0-a14 column address a0-a9 a0-a9 a0-a9 a0-a9 bank address ba0-ba2 ba0-ba2 ba0-ba2 ba0-ba2 page size 2kb 2kb 1kb 1kb b48614/178.104.2.80/2010-07-13 16:20 a pcpcwm_4828539:wp...
Description 256M X 64 DDR DRAM MODULE, DMA204

File Size 474.71K  /  54 Page

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    NANYA TECHNOLOGY CORP
Part No. NT5DS128M4BT-6K
OCR Text ...are used to select the bank and row to be accessed. the address bits registered coincident with the read or write command are used to select the bank and the starting column location for the burst access. the ddr sdram provides for progr...
Description 128M X 4 DDR DRAM, 0.7 ns, PDSO66

File Size 2,500.58K  /  80 Page

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    HYNIX SEMICONDUCTOR INC
Part No. HY5DU561622ELTP-L
OCR Text ...ii 0.65mm pin pitch (lead free) row and column address table items 32mx8 16mx16 organization 8m x 8 x 4banks 4m x 16 x 4banks row address a0 - a12 a0 - a12 column address a0-a9 a0-a8 bank address ba0, ba1 ba0, ba1 auto precharge flag a10 a1...
Description 16M X 16 DDR DRAM, 0.75 ns, PDSO66

File Size 235.08K  /  29 Page

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    Mosel Vitelic Corp
Part No. V58C2256164S V58C2256164SXT6 V58C2256164SXT7 V58C2256164SXT75 V58C2256164SXT8 V58C2256804SXT8 V58C2256404SXT8
OCR Text ...clock enable cs chip select ras row address strobe cas column address strobe we write enable dqs (udqs, ldqs) data strobe (bidirectional) a 0 ?a 12 address inputs ba0, ba1 bank select dq?s data input/output dm (udm, ldm) data mask v dd powe...
Description HIGH PERFORMANCE 2.5 VOLT 256 Mbit DDR SDRAM
High performance 2.5V 128MB DDR SDRAM

File Size 800.32K  /  61 Page

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