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For 10.16m Found Datasheets File :: 2799 Search Time::2.063ms
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				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4S560832E-NCL75 K4S561632E-NCL60 K4S561632E-NCL75 K4S560432E-NC K4S560432E-NCL75 K4S561632E-NC75
OCR Text	...50.05 0.2100.05 7.6 (1.10) 0.10 MAX (R 0.2 5) (R 5) (14 0.1 0. 30 ) (14) NOTE 1. ( ) IS REFERENCE 2. [ ]...16M x 4 / 8M x 8 / 4M x 16 Sense AMP 16M x 4 / 8M x 8 / 4M x 16 16M x 4 / 8M x 8 / 4M x 16 16M x 4 /...
Description	16M x 16 SDRAM, LVTTL, 133MHz 256Mb E-die SDRAM Specification 54pin sTSOP-II
File Size	205.22K / 14 Page	View it Online	Download Datasheet

				Cypress Semiconductor, Corp.
Part No.	CYU01M16ZCCU-55BVXI
OCR Text	...12 a 13 a 14 a 15 a 16 a 9 a 10 a 17 a 19 a 18 a 7 a 6 a 5 a 2 column decoder a 4 a 3 a 0 a 1 preliminary cyu01m16zcc mobl3? do...16m 1 1 1 1/4 th of the array c0000h - fffffh (a19 = a18 = 1) 256k x 16 4m 1 1 0 1/2 th of the arr...
Description	1M X 16 PSEUDO STATIC RAM, 55 ns, PBGA48 6 X 8 MM, 1 MM HEIGHT, LEAD FREE, VFBGA-48
File Size	218.00K / 14 Page	View it Online	Download Datasheet

				OKI electronic components OKI[OKI electronic componets]
Part No.	MSM5116400B
OCR Text	...tion * Single 5 V power supply, 10% tolerance * Input : TTL compatible, low input capacitance * Output : TTL compatible, 3-state * Refresh :...16M 207 , MSM5116400B Semiconductor PIN CONFIGURATION (TOP VIEW) VCC 1 26 VSS VCC 1 ...
Description	4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
File Size	68.94K / 8 Page	View it Online	Download Datasheet

				Vishay Intertechnology, Inc.
Part No.	M55342E12B53E6PTS M55342E12B53E6PT3 M55342E12B53E6PT0 M55342E12B53E6PTF M55342E12B53E6PT5 M55342E12B53E6PT1 M55342K04B1T69MT3V M55342H04B1T69MWS M55342E04B1T69MT3 M55342H04B1T69MT1 M55342H04B1T69MTS M55342K04B1T69MT0V M55342H04B1T69MTF M55342H04B1T69MT0 M55342H04B1T69MT5 M55342E04B1T69MWS M55342E04B1T69MTS M55342K04B1T69MT1V M55342H04B1T69MT3 M55342K04B1T69MBSV M55342E04B1T69MT0 M55342E04B1T69MTF M55342E04B1T69MT1 M55342H04B1T69MBS M55342E04B1T69MBS M55342E04B1T69MT5
OCR Text	...ted nichrome - resistance range 10 to 6.19 m - tcr: absolute 25 ppm/c to 300 ppm/c - 55 c to + 125 c tolerance: absolute 0.1 % to 10...16m 49.9 to 3.16m 10 to 3.16m 10 to 3.16m m55342/06 150 50 49.9 to 475k 49.9 to 475k 10 to 475k 10 t...
Description	RESISTOR, THIN FILM, 0.1 W, 1 %, 25 ppm, 53600 ohm, SURFACE MOUNT, 0603 CHIP RESISTOR, THIN FILM, 0.15 W, 2 %, 100 ppm, 1690000 ohm, SURFACE MOUNT, 1505 CHIP RESISTOR, THIN FILM, 0.15 W, 2 %, 50 ppm, 1690000 ohm, SURFACE MOUNT, 1505 CHIP RESISTOR, THIN FILM, 0.15 W, 2 %, 25 ppm, 1690000 ohm, SURFACE MOUNT, 1505 CHIP
File Size	218.54K / 4 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K9F2808Q0B K9F2808Q0B-D K9F2808Q0B-DCB0 K9F2808Q0B-DIB0 K9F2808U0B-D K9F2808U0B-DCB0 K9F2808U0B-DIB0 K9F2808U0B-V K9F2808U0B-VCB0 K9F2808U0B-VIB0 K9F2808U0B-Y K9F2808U0B-YCB0 K9F2808U0B-YIB0 K9F2808Q0C K9F2808Q0C-DCB0
OCR Text	...Erase Cycles - Data Retention : 10 Years * Command Register Operation * Package - K9F2808U0B-YCB0/YIB0 : 48 - Pin TSOP I (12 x 20 / 0.5 mm p...16M(16,777,216)x8bit NAND Flash Memory with a spare 512K(524,288)x8bit. The device is offered in 1.8...
Description	16M x 8 Bit / 8M x 16 Bit NAND Flash Memory 16M x 8 Bit NAND Flash Memory
File Size	302.44K / 29 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K9F2808Q0C K9F2808Q0C-DCB0 K9F2808U0C-DCB0 K9F2808U0C-DIB0 K9F2808U0C-VCB0 K9F2808U0C-VIB0 K9F2816Q0C-DCB0 K9F2816Q0C-DIB0 K9F2816U0C-DCB0 K9F2816U0C-DIB0 K9F2816U0C-YCB0 K9F2816U0C-YIB0 K9F2G08Q0M K9F2808U0C-YCB0 K9F2808U0C-YIB0
OCR Text	...Erase Cycles - Data Retention : 10 Years * Command Register Operation * Unique ID for Copyright Protection * Package - K9F28XXU0C-YCB0/YIB0 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch) - K9F28XXU0C-PCB0/PIB0 48 - Pin TSOP I (12 x 20 / 0.5 mm pi...
Description	16M x 8 Bit / 8M x 16 Bit NAND Flash Memory 16M x 8 Bit , 8M x 16 Bit NAND Flash Memory 16M x 8 bit NAND flash memory, 2.7 - 3.6V
File Size	579.95K / 33 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K9F2808U0M- K9F2808U0M-YCB0 K9F2808U0M-YIB0
OCR Text	...x.) 10s(Max.) 2. Changed Nop : 10 cycles(Max.) Main Array 2 cycles(Max.) Spare Array 3 cycles(Max.) t 3. Added CE don' care mode during th...16M x 8 Bit NAND Flash Memory FEATURES * Voltage supply : 2.7V~3.6V * Organization - Memory Cell A...
Description	16M x 8 Bit NAND Flash Memory
File Size	344.24K / 26 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K9F2808U0 K9F2808U0A K9F2808U0A- K9F2808U0A-YCB0 K9F2808U0A-YIB0
OCR Text	...Erase Cycles - Data Retention : 10 Years * Command Register Operation * Package : 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch) FLASH MEMORY GENERAL DESCRIPTION The K9F2808U0A is a 16M(16,777,216)x8bit NAND Flash Memory with a spare 512K(...
Description	16M x 8 Bit NAND Flash Memory
File Size	351.20K / 26 Page	View it Online	Download Datasheet

				Sanyo Semicon Device
Part No.	LC78620E
OCR Text	...rs TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 92895HA (OT) No. 5130-1/34 LC78620E Equivalent Circui...16M mode XIN, XOUT: In 32M mode 16.9344 33.8688 400 1.0 1.0 10 min 4.5 0.7 VDD 0.6 VDD 0 0 400 400 4...
Description	Compact Disc Player DSP CMOS LSI
File Size	473.08K / 34 Page	View it Online	Download Datasheet

				SANYO[Sanyo Semicon Device]
Part No.	LC78621E 2069
OCR Text	...rs TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 83095HA (OT) No. 5223-1/34 LC78621E Equivalent Circui...16M mode XIN, XOUT: In 32M mode 16.9344 33.8688 400 1.0 1.0 10 min 3.6 0.7 VDD 0.6 VDD 0 0 400 400 4...
Description	Compact Disc Player DSP CMOS LSI From old datasheet system
File Size	413.22K / 34 Page	View it Online	Download Datasheet

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