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Microsemi
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| Part No. |
APT5018BLLG
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| OCR Text |
...t (v ds = 400v, v gs = 0v, t c = 125c) gate-source leakage current (v gs = 30v, v ds = 0v) gate threshold voltage (v ds = v gs , i ...mos 7 ? is a new generation of low loss, high voltage, n-channel enhancement mode power mosfets. ... |
| Description |
MOSFET
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| File Size |
162.39K /
5 Page |
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Microsemi
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| Part No. |
APT5016BLLG
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| OCR Text |
c 11-2003 maximum ratings all ratings: t c = 25c unless otherwise specified. g d s caution: these devices are sensitive to electrostat...mos 7 ? is a new generation of low loss, high voltage, n-channel enhancement mode power mosfets. ... |
| Description |
MOSFET
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| File Size |
102.77K /
5 Page |
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it Online |
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Microsemi
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| Part No. |
APT4016BVFRG
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| OCR Text |
...s = 320v v dss , v gs = 0v, t c =125c) gate-source leakage current (v gs = 30v, v ds = 0v) gate threshold voltage (v ds = v gs , i d...mos v ? is a new generation of high voltage n-channel enhancement mode power mosfets. this new tech... |
| Description |
FREDFETs
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| File Size |
67.63K /
4 Page |
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Advanced Power Technolo...
ADPOW[Advanced Power Technology]
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| Part No. |
APT6021SFLL APT6021BFLL APT6021BFLL_04 APT6021BFLL04
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| OCR Text |
...che Current
1
Volts Watts W/C C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
1300
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Character... |
| Description |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
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| File Size |
163.68K /
5 Page |
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Microsemi
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| Part No. |
APT10090BLLG
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| OCR Text |
c = 25c unless otherwise speci ? ed. static electrical characterist...mos 7 ? is a new generation of low loss, high voltage, n-channel enhancement mode power mosfets. ... |
| Description |
MOSFET
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| File Size |
191.85K /
5 Page |
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it Online |
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Microsemi
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| Part No. |
APT10086BVRG
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| OCR Text |
...ds = 0.8 v dss , v gs = 0v, t c = 125 c) gate-source leakage current (v gs = 30v, v ds = 0v) gate threshold voltage (v ds = v gs ...mos v ? is a new generation of high voltage n-channel enhancement mode power mosfets. this new tech... |
| Description |
MOSFET
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| File Size |
52.13K /
4 Page |
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it Online |
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Microsemi
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| Part No. |
APT10078BLLG
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| OCR Text |
c 4-2004 maximum ratings all ratings: t c = 25c unless otherwise specified. caution: these devices are sensitive to electrostatic disc...mos 7 ? is a new generation of low loss, high voltage, n-channel enhancement mode power mosfets. ... |
| Description |
MOSFET
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| File Size |
153.35K /
5 Page |
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Microsemi
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| Part No. |
APT10045B2LLG APT10045LLLG
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| OCR Text |
...t (v ds = 800v, v gs = 0v, t c = 125c) gate-source leakage current (v gs = 30v, v ds = 0v) gate threshold voltage (v ds = v gs , i ...mos 7 ? is a new generation of low loss, high voltage, n-channel enhancement mode power mosfets. ... |
| Description |
MOSFET
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| File Size |
156.58K /
5 Page |
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it Online |
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Microsemi
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| Part No. |
APT10035B2LLG APT10035LLLG
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| OCR Text |
...t (v ds = 800v, v gs = 0v, t c = 125c) gate-source leakage current (v gs = 30v, v ds = 0v) gate threshold voltage (v ds = v gs , i ...mos 7 ? is a new generation of low loss, high voltage, n-channel enhancement mode power mosfets. ... |
| Description |
MOSFET
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| File Size |
157.57K /
5 Page |
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it Online |
Download Datasheet |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT50M85LVR APT50M85B2VR
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| OCR Text |
...petitive)
1 4
Volts Watts W/C C Amps mJ
3000
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) On State Drain Cur... |
| Description |
POWER MOS V 500V 56A 0.085 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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| File Size |
37.06K /
2 Page |
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it Online |
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Price and Availability
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