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  c-mos Datasheet PDF File

For c-mos Found Datasheets File :: 31936    Search Time::3.297ms    
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    Microsemi
Part No. APT5018BLLG
OCR Text ...t (v ds = 400v, v gs = 0v, t c = 125c) gate-source leakage current (v gs = 30v, v ds = 0v) gate threshold voltage (v ds = v gs , i ...mos 7 ? is a new generation of low loss, high voltage, n-channel enhancement mode power mosfets. ...
Description MOSFET

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    Microsemi
Part No. APT5016BLLG
OCR Text c 11-2003 maximum ratings all ratings: t c = 25c unless otherwise specified. g d s caution: these devices are sensitive to electrostat...mos 7 ? is a new generation of low loss, high voltage, n-channel enhancement mode power mosfets. ...
Description MOSFET

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    Microsemi
Part No. APT4016BVFRG
OCR Text ...s = 320v v dss , v gs = 0v, t c =125c) gate-source leakage current (v gs = 30v, v ds = 0v) gate threshold voltage (v ds = v gs , i d...mos v ? is a new generation of high voltage n-channel enhancement mode power mosfets. this new tech...
Description FREDFETs

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    Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Part No. APT6021SFLL APT6021BFLL APT6021BFLL_04 APT6021BFLL04
OCR Text ...che Current 1 Volts Watts W/C C Amps mJ (Repetitive and Non-Repetitive) 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy 1300 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Character...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

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    Microsemi
Part No. APT10090BLLG
OCR Text c = 25c unless otherwise speci ? ed. static electrical characterist...mos 7 ? is a new generation of low loss, high voltage, n-channel enhancement mode power mosfets. ...
Description MOSFET

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    Microsemi
Part No. APT10086BVRG
OCR Text ...ds = 0.8 v dss , v gs = 0v, t c = 125 c) gate-source leakage current (v gs = 30v, v ds = 0v) gate threshold voltage (v ds = v gs ...mos v ? is a new generation of high voltage n-channel enhancement mode power mosfets. this new tech...
Description MOSFET

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    Microsemi
Part No. APT10078BLLG
OCR Text c 4-2004 maximum ratings all ratings: t c = 25c unless otherwise specified. caution: these devices are sensitive to electrostatic disc...mos 7 ? is a new generation of low loss, high voltage, n-channel enhancement mode power mosfets. ...
Description MOSFET

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    Microsemi
Part No. APT10045B2LLG APT10045LLLG
OCR Text ...t (v ds = 800v, v gs = 0v, t c = 125c) gate-source leakage current (v gs = 30v, v ds = 0v) gate threshold voltage (v ds = v gs , i ...mos 7 ? is a new generation of low loss, high voltage, n-channel enhancement mode power mosfets. ...
Description MOSFET

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    Microsemi
Part No. APT10035B2LLG APT10035LLLG
OCR Text ...t (v ds = 800v, v gs = 0v, t c = 125c) gate-source leakage current (v gs = 30v, v ds = 0v) gate threshold voltage (v ds = v gs , i ...mos 7 ? is a new generation of low loss, high voltage, n-channel enhancement mode power mosfets. ...
Description MOSFET

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    ADPOW[Advanced Power Technology]
Part No. APT50M85LVR APT50M85B2VR
OCR Text ...petitive) 1 4 Volts Watts W/C C Amps mJ 3000 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) On State Drain Cur...
Description POWER MOS V 500V 56A 0.085 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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Price and Availability




 
Price & Availability of c-mos
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