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IRF
MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
RA03M8894M RA03M8894M-101 RDHA710SE10A2FK
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| OCR Text |
...silicone. The MOSFET transistor chips are die bonded onto metal, wire bonded to the substrate, and coated with resin. Lines on the substrate (eventually inductors), chip capacitors, and resistors form the bias and matching circuits. Wire le... |
| Description |
889-941MHz 3.6W 7.2V, 2 Stage Amp. For PORTABLE RADIO
Radiation Hardended, Solid-State Relay with Buffered Inputs
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| File Size |
90.50K /
8 Page |
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it Online |
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SKYWORKS SOLUTIONS INC
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| Part No. |
CME7660-203
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| OCR Text |
...rier diodes: packaged, bondable chips and beam leads applications ? detectors ? mixers features ? available in both p - type and n - type low barrier and zbd designs ? low 1/f noise ? large bond pad chip design ?... |
| Description |
SILICON, MIXER DIODE
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| File Size |
537.01K /
9 Page |
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it Online |
Download Datasheet |
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| Part No. |
CME7660-000
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| OCR Text |
...wer limiters. rf parameters on chips and beamlead diodes are tested on a sample basis, while breakdown voltage and capacitance measurements are 100% tested. packaged diodes are 100% rf tested. tss is the one parameter that best describes ... |
| Description |
SILICON, MEDIUM BARRIER SCHOTTKY, KU BAND, MIXER DIODE
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| File Size |
83.31K /
6 Page |
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it Online |
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POWEREX INC
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| Part No. |
CM450DY-24S
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| OCR Text |
...he heatsink side just under the chips. refer to the figure to the right for chip location. the heatsink thermal resistance should be measured just under the chips. *3 pulse width and repetition rate should be such that device junctio... |
| Description |
410 A, 1200 V, N-CHANNEL IGBT
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| File Size |
596.43K /
4 Page |
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it Online |
Download Datasheet |
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Price and Availability
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