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TY Semicondutor
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Part No. |
2SJ181S
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OCR Text |
... to source voltage v dss -600 v gate to source voltage v gss 15 v drain current i d(ds) -0.5 a drain peak current * i d(pulse) -1 a channel dissipation (tc=25 ) p ch 20 w channel temperature t ch 150 storage temperature t stg -55to+150 *pw ... |
Description |
P-Channel MOSFET
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File Size |
176.67K /
2 Page |
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UTC
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Part No. |
UTCCD4069
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OCR Text |
...ge input capacitance c in any gate 6 15 pf power dissipation capacitance c pd any gate (note 4) 12 pf *ac parameters are guaranteed by dc correlated testing. note 1: ''absolute maximum ratings'' are those values beyond whi... |
Description |
Inverter Circuits
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File Size |
147.33K /
5 Page |
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it Online |
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TOSHIBA
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Part No. |
TPN7R506NH
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OCR Text |
... high-speed switching (2) small gate charge: q sw = 9.2 nc (typ.) (3) low drain-source on-resistance: r ds(on) = 6.0 m ? (typ.) (v gs = 10 v) (4) low leakage current: i dss = 10 a (max) (v ds = 60 v) (5) enhancement mode: v th = 2.... |
Description |
Power MOSFET (N-ch single 30V<VDSS≤60V)
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File Size |
237.68K /
9 Page |
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it Online |
Download Datasheet |
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Price and Availability
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