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For geometry Found Datasheets File :: 3452    Search Time::1.484ms    
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    TDA9113

STMicroelectronics
Part No. TDA9113
OCR Text ...iation EW section s Symmetrical geometry corrections: Pin cushion, Keystone, Top/Bottom corners separately s Horizontal size adjustment s Tracking of EW waveform with Vertical size and position and adaptation to frequency s Compensation of ...
Description LOW-COST I2C CONTROLLED DEFLECTION PROCESSOR FOR MULTISYNC MONITOR

File Size 579.60K  /  50 Page

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    TE28F320S3-100 TE28F320S3-120 TE28F160S3-100 TE28F160S3-120 DT28F320S3-100 DT28F320S3-120 GT28F160S3-100 GT28F160S3-120

INTEL[Intel Corporation]
Part No. TE28F320S3-100 TE28F320S3-120 TE28F160S3-100 TE28F160S3-120 DT28F320S3-100 DT28F320S3-120 GT28F160S3-100 GT28F160S3-120 DT28F160S3-100 DT28F160S3-120 GT28F320S3-100 GT28F320S3-120 DT28F320S3-110 TE28F160S3-130 TE28F160S3-75 DT28F160S3-130 DT28F160S3-75 DT28F320S3-140
OCR Text ...n...............22 4.2.6 Device geometry Definition .................23 4.2.7 Intel-Specific Extended Query Table ...24 4.3 Read Identifier Codes Command ...............25 4.4 Read Status Register Command................25 4.5 Clear Status ...
Description WORD-WIDE FlashFile MEMORY FAMILY

File Size 1,234.30K  /  52 Page

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    IRFY140CM

IRF[International Rectifier]
Part No. IRFY140CM
OCR Text ...SFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast...
Description POWER MOSFET N-CHANNEL(BVdss=100V, Rds(on)=0.077ohm, Id=16*A)

File Size 248.13K  /  6 Page

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    LXE16350X

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. LXE16350X
OCR Text ... excellent lifetime * Multicell geometry gives good balance of dissipated power and low thermal resistance * Internal input and output prematching ensures good stability and allows an easier design of wideband circuits. APPLICATIONS Common ...
Description NPN microwave power transistor

File Size 84.33K  /  12 Page

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    MMBT6517LT1 MMBT6517LT1_D ON2130

MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
ON Semi
Part No. MMBT6517LT1 MMBT6517LT1_D ON2130
OCR Text ...e package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm SOT-23 SOT-23 POWER DISSIPATION The power dissipatio...
Description From old datasheet system
Motorola Preferred Device
High Voltage Transistor

File Size 229.86K  /  8 Page

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    PZT651T1 ON2780 PZT65

ONSEMI[ON Semiconductor]
Part No. PZT651T1 ON2780 PZT65
OCR Text ...e package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. 0.248 6.3 0.091 2.3 0.079 2.0 0.059 1.5 0.059 1.5 0.059 1.5 inches mm 0.091 2.3 SOT-223 POWER DISSIPATION The power...
Description From old datasheet system
HIGH CURRENT NPN SILICON TRANSISTOR SURFACE MOUNT

File Size 101.17K  /  6 Page

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    MBRV7030CTL MBRV7030CTL_D ON0481

Motorola, Inc.
ON Semi
MOTOROLA[Motorola, Inc]
Part No. MBRV7030CTL MBRV7030CTL_D ON0481
OCR Text ...e package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. 0.165 4.191 0.100 2.54 0.118 3.0 0.063 1.6 0.190 4.826 0.243 6.172 inches mm POWER DISSIPATION FOR A SURF...
Description TOOLS, ELECTRONIC KITS RoHS Compliant: NA
SWIRCHMODE Schottky Power Rectifier(D3PAK Power Surface Mount Pakage)
70 AMPERES 30 VOLTS
From old datasheet system
SWIRCHMODE⑩ Schottky Power Rectifier(D3PAK Power Surface Mount Pakage)

File Size 154.71K  /  8 Page

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    MMUN2111LT1 MMUN2134LT1 MMUN2133LT1 MMUN2130LT1 MMUN2112LT1 MMUN2113LT1 MMUN2114LT1 MMUN2115LT1 MMUN2116LT1 MMUN2131LT1

Motorola, Inc.
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
Part No. MMUN2111LT1 MMUN2134LT1 MMUN2133LT1 MMUN2130LT1 MMUN2112LT1 MMUN2113LT1 MMUN2114LT1 MMUN2115LT1 MMUN2116LT1 MMUN2131LT1 MMUN2132LT1
OCR Text ...e package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm SOT-23 SOT-23 POWER DISSIPATION The power dissipatio...
Description PNP SILICON BIAS RESISTOR TRANSISTOR

File Size 266.84K  /  10 Page

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    MMUN2112LT1 MMUN2113LT1 MMUN2114LT1 MMUN2115LT1 MMUN2116LT1 MMUN2130LT1 MMUN2131LT1 MMUN2132LT1 MMUN2133LT1 MMUN2134LT1

MOTOROLA INC
ONSEMI[ON Semiconductor]
Part No. MMUN2112LT1 MMUN2113LT1 MMUN2114LT1 MMUN2115LT1 MMUN2116LT1 MMUN2130LT1 MMUN2131LT1 MMUN2132LT1 MMUN2133LT1 MMUN2134LT1 MMUN2111LT1_D ON2286 MMUN2114LT3
OCR Text ...e package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm SOT-23 SOT-23 POWER DISSIPATION The power dissipatio...
Description 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
From old datasheet system
PNP SILICON BIAS RESISTOR TRANSISTOR

File Size 186.54K  /  10 Page

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    MUN211 MUN2111T1 MUN2112T1 MUN2113T1 MUN2114T1 MUN2115T1 MUN2116T1 MUN2130T1 MUN2131T1 MUN2132T1 MUN2133T1 MUN2134T1 DTA

MOTOROLA[Motorola, Inc]
ONSEMI[ON Semiconductor]
MOTOROLA[Motorola Inc]
Motorola, Inc.
Part No. MUN211 MUN2111T1 MUN2112T1 MUN2113T1 MUN2114T1 MUN2115T1 MUN2116T1 MUN2130T1 MUN2131T1 MUN2132T1 MUN2133T1 MUN2134T1 DTA144W MUN2111T1_D ON2721 MUN21XXT1
OCR Text ...e package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. 0.037 0.95 0.098-0.118 2.5-3.0 0.094 2.4 0.039 1.0 0.031 0.8 inches mm SC-59 POWER DISSIPATION The power dissipatio...
Description    PNP SILICON BIAS RESISTOR TRANSISTOR
From old datasheet system

File Size 237.11K  /  10 Page

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For geometry Found Datasheets File :: 3452    Search Time::1.484ms    
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