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high radiometric power per led Datasheet PDF File

For high radiometric power per led Found Datasheets File :: 150+ Page :: | 1 | 2 | 3 | 4 | 5 | 6 | <7> | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |

				Anadigics Inc ANADIGICS, Inc
Part No.	AWT6114
Description	The AWT6114 is a high power, high efficiency amplifier module for Korean Band PCS CDMA wireless handset applications. power Amplifiers KPCS CDMA 3.4V/28dBm Linear power Amplifier Module
File Size	121.68K / 8 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V.
Part No.	CGD1046HI
Description	1 GHz, 27 dB gain GaAs high output power doubler 40 MHz - 1003 MHz RF/MICROWAVE NARROW BAND high power AMPLIFIER
File Size	78.51K / 8 Page	View it Online	Download Datasheet

				Vicor, Corp. VICOR[Vicor Corporation]
Part No.	08-130097-B 08-130097
Description	Compant high-Insulation power Relay, Polarized, 10A 外形图式PFC MEGAPAC大功率（2.4KW OUTLINE DRAWING PFC MEGAPAC high power (2.4KW)
File Size	122.13K / 2 Page	View it Online	Download Datasheet

				CREE power
Part No.	W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L000 W4NXD8D-0000 W4NXD8C-S000 W4NXD8D-S000 W4NXD8G-0000 W6NRE0X-0000 W6NRD0X-0000 W6PXD3O-0000 W6NXD3L-0000 W6NXD0K-0000 W6NXD3K-0000
Description	Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
File Size	273.34K / 17 Page	View it Online	Download Datasheet

				ADPOW[Advanced power Technology] Advanced power Technology Ltd.
Part No.	APT1001RBLC APT1001RSLC APT1001
Description	power MOS VI 1000V 11A 1.000 Ohm power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs N-CHANNEL ENHANCEMENT MODE high VOLTAGE power MOSFETS
File Size	34.77K / 2 Page	View it Online	Download Datasheet

				UTC ROHM[Rohm]
Part No.	2SB1713 2SB1714 2SB852K1 2SC2412K1 2SC41021 2SC47261 2SC58241 2SC58661 2SC58761 2SD1383K1 2SD16641 2SD18981 2SD20981 2SD2114K1 2SD26721 2SK20941 2SK25031 2SK25041 2SK27151 2SK30181 2SK30191 2SK30501 2SK35411 4N60-TA3-T 4N60-TF3-T 4N60L-TA3-T
Description	-3A / -12V Bipolar transistor -2A / -30V Bipolar transistor high-gain Amplifier Transistor (?32V, ?0.3A) General purpose transistor (50V, 0.15A) high-voltage Amplifier Transistor (120V, 50mA) high-Frequency Amplifier Transistor (11V, 50mA, 3.2GHz) power transistor (60V, 3A) Medium power transistor (60V, 2A) Medium power transistor (60V, 0.5A) high-gain Amplifier Transistor (32V , 0.3A) Medium power Transistor (32V, 1A) power Transistor (80V, 1A) Low VCE(sat) transistor (strobe flash) high-current Gain Medium power Transistor (20V, 0.5A) Low frequency amplifier 4V Drive Nch MOS FET 10V Drive Nch MOS FET 2.5V Drive Nch MOS FET 4 Amps, 600 Volts N-CHANNEL power MOSFET
File Size	93.04K / 3 Page	View it Online	Download Datasheet

				Fujitsu Component Limited. Fujitsu Microelectronics Fujitsu Media Devices Limited Toshiba Semiconductor Fujitsu Limited Fujitsu, Ltd.
Part No.	2SC2429
Description	SILICON high SPEED TRIPLE DIFFUSED NPN power TRANSISTOR 10 AMP,400 VOLT From old datasheet system SILICON high SPPED power TRANSISTORS 高硅SPPED功率晶体
File Size	138.86K / 3 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	MJB18004D2T4-D
Description	high Speed, high Gain Bipolar NPN power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network D2PAK For Surface Mount power TRANSISTORS 5 AMperES 1000 VOLTS 75 WATTS
File Size	224.23K / 16 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	BTS716G BTS716 Q67060-S7025
Description	high Speed CMOS Logic Decade Counter/Divider with 10 Decoded Outputs 16-SO -55 to 125 Smart high Side Switches - 3,0-40V, 4x140mΩ Limit(scr) 6,5A DSO-20-9 Smart high-Side power Switch Four Channels: 4 x 140m Status Feedback Smart high-Side power Switch Four Channels: 4 x 140mз Status Feedback
File Size	399.43K / 14 Page	View it Online	Download Datasheet

				TT electronics Semelab, Ltd. SEME-LAB[Seme LAB]
Part No.	BUX39
Description	high CURRENT high SPEED high power SILICON NPN PLANAR TRANSISTOR 30 A, 90 V, NPN, Si, power TRANSISTOR, TO-3
File Size	20.34K / 2 Page	View it Online	Download Datasheet

For high radiometric power per led Found Datasheets File :: 150+ Page :: | 1 | 2 | 3 | 4 | 5 | 6 | <7> | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |

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