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mos-fets Datasheet PDF File

For mos-fets Found Datasheets File :: 1457 Search Time::2.047ms
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				M/A-COM Technology Solu... M/A-COM Technology Solutions, Inc.
Part No.	MRF136 MRF136-15
OCR Text	...lifier applications. M/A-COM RF MOS FETs feature a vertical structure with a planar design, thus avoiding the processing difficulties associated with V- groove vertical power FETs. M/A-COM Application Note AN211A, FETs in Theory andPractice...
Description	The RF MOSFET Line The RF MOSFET Line 15W, to 400MHz, 28V
File Size	597.74K / 12 Page	View it Online	Download Datasheet

				M/A-COM Technology Solutions, Inc.
Part No.	MRF137
OCR Text	...lifier applications. M/A-COM RF MOS FETs feature a vertical structure with a planar design, thus avoiding the processing difficulties associated with V- groove vertical power FETs. M/A-COM Application Note AN211A, FETs in Theory andPractice...
Description	The RF MOSFET Line 30W, to 400MHz, 28V
File Size	430.72K / 11 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BF1202WR BF1202R BF1202
OCR Text	mos-fets Product specification Supersedes data of 1999 Dec 01 2000 Mar 29 Philips Semiconductors Product specification N-channel dual-gate PoLo mos-fets FEATURES * Short channel transistor with high forward transfer admittance to...
Description	N-channel dual-gate PoLo mos-fets
File Size	118.13K / 16 Page	View it Online	Download Datasheet

				Quanzhou Jinmei Electro... PHILIPS[Philips Semiconductors] NXP Semiconductors
Part No.	BF1201WR BF1201R BF1201 BF1201-15 BF1201-2015
OCR Text	mos-fets Product specification Supersedes data of 1999 Dec 01 2000 Mar 29 Philips Semiconductors Product specification N-channel dual-gate PoLo mos-fets FEATURES * Short channel transistor with high forward transfer admittance to...
Description	N-channel dual-gate PoLo mos-fets
File Size	116.07K / 16 Page	View it Online	Download Datasheet

				Philips Semiconductors
Part No.	BF1105R
OCR Text	mos-fets Product specification Supersedes data of 1997 Dec 01 File under Discrete Semiconductors, SC07 1997 Dec 02 Philips Semiconductors Product specification N-channel dual-gate mos-fets FEATURES * Short channel transistor with...
Description	N-channel dual-gate mos-fets
File Size	151.80K / 16 Page	View it Online	Download Datasheet

				Matsshita / Panasonic
Part No.	2SK3048
OCR Text	MOS FETs 2SK3048 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown unit: mm 9.90.3 4.60.2 2.90.2 s Applications q Contactless ...
Description	Power F-MOS FETs
File Size	53.72K / 4 Page	View it Online	Download Datasheet

				Quanzhou Jinmei Electro... PHILIPS[Philips Semiconductors] NXP Semiconductors ETC
Part No.	BF1211 BF1211WR BF1211R BF1211-15 BF1211-2015
OCR Text	mos-fets Product specification 2003 Dec 16 Philips Semiconductors Product specification N-channel dual-gate mos-fets FEATURES * Short channel transistor with high forward transfer admittance to input capacitance ratio * Low noise...
Description	BF1211; BF1211R; BF1211WR; N-channel dual-gate mos-fets
File Size	104.17K / 15 Page	View it Online	Download Datasheet

				Guilin Strong Micro-Ele...
Part No.	BSS84
OCR Text	...hancement-mode enhancement-mode mos mos mos mos fets fets fets fets p p p p ? mos mos mos mos ? maximum maximum maximum maximum ratings ratings ratings ratings ~? thermal thermal thermal thermal characteristics characteristics characteris...
Description	SOT-23 Field Effect Transistors
File Size	298.22K / 3 Page	View it Online	Download Datasheet

				Matsshita / Panasonic
Part No.	2SK3047
OCR Text	MOS FETs 2SK3047 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 15mJ q VGSS = 30V guaranteed q High-speed switching: tf = 25ns q No secondary breakdown unit: mm 9.90.3 4.60.2 2.90.2 s A...
Description	Power F-MOS FETs
File Size	52.56K / 4 Page	View it Online	Download Datasheet

				Matsshita / Panasonic
Part No.	2SK3046
OCR Text	MOS FETs 2SK3046 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 130mJ q VGSS = 30V guaranteed q High-speed switching: tf = 60ns q No secondary breakdown unit: mm 9.90.3 4.60.2 2.90.2 s ...
Description	Power F-MOS FETs
File Size	53.84K / 4 Page	View it Online	Download Datasheet

For mos-fets Found Datasheets File :: 1457 Search Time::2.047ms
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