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multi-epitaxial Datasheet PDF File

For multi-epitaxial Found Datasheets File :: 478 Search Time::1.406ms
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				ETC[ETC] http://
Part No.	SXA-3318B
OCR Text	...ty makes it an ideal choice for multi-carrier as well as digital applications. SXA-3318B 400-2500 MHz Balanced 1/2 W Medium Power GaAs HBT Amplifier with Active Bias Product Features * On-chip Active Bias Control * Balanced for exce...
Description	400-2500兆赫平衡1 / 2瓦中功率GaAs HBT的功放音箱，有源偏置 400-2500 MHz Balanced 1/2 W Medium Power GaAs HBT Amplifier with Active Bias
File Size	812.77K / 8 Page	View it Online	Download Datasheet

				STMICROELECTRONICS[STMicroelectronics]
Part No.	BUL903ED 5992 BUL903
OCR Text	...manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. The device has been designed in order to operate without baker clamp and transil protection. This enables saving from 2...
Description	From old datasheet system HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
File Size	65.50K / 6 Page	View it Online	Download Datasheet

				STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
Part No.	STX93003 STX93003-AP
OCR Text	...manufactured using high voltage multi-epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the w...
Description	HIGH VOLTAGE FAST-SWITCHING PNP POWER TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR HIGH VOLTAGE FAST-SWITCHING PNP POWER TRANSISTOR
File Size	246.63K / 7 Page	View it Online	Download Datasheet

				STMicroelectronics
Part No.	BUL312FP
OCR Text	...manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining a wide ...
Description	HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
File Size	222.61K / 6 Page	View it Online	Download Datasheet

				STMICROELECTRONICS[STMicroelectronics]
Part No.	BUL1102E 7929
OCR Text	...manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining a wide ...
Description	From old datasheet system HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
File Size	208.90K / 6 Page	View it Online	Download Datasheet

				ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
Part No.	STX83003 9087
OCR Text	...manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the w...
Description	HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR From old datasheet system
File Size	248.84K / 7 Page	View it Online	Download Datasheet

				STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
Part No.	BUL654 9368
OCR Text	...manufactured using high voltage Multi Epitaxial Planar technology for cost-effective high performance. It uses a Hollow Emitter structure to enhance switching speeds. The BUL series is designed for use in lighting applications and low cost ...
Description	HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR From old datasheet system HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
File Size	53.25K / 4 Page	View it Online	Download Datasheet

				STMicroelectronics N.V.
Part No.	BULT116D 9369
OCR Text	...he device is manufactured using Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the w...
Description	MEDIUM VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR 中压快速开关NPN电源晶体 From old datasheet system
File Size	208.00K / 6 Page	View it Online	Download Datasheet

				STANFORD[Stanford Microdevices]
Part No.	SPA-2318
OCR Text	...ty makes it an ideal choice for multi-carrier and digital applications. SPA-2318 2150 MHz 1 Watt Power Amplifier with Active Bias Product Features * High Linearity Performance: +47 dBm Typ. OIP3 at 2140 MHz +21.7 dBm W-CDMA Channel ...
Description	2150 MHz 1 Watt Power Amplifier with Active Bias
File Size	265.73K / 6 Page	View it Online	Download Datasheet

				STMicroelectronics
Part No.	STBV32-AP 6506
OCR Text	...manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining a wide ...
Description	HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR From old datasheet system
File Size	275.30K / 8 Page	View it Online	Download Datasheet

For multi-epitaxial Found Datasheets File :: 478 Search Time::1.406ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | <7> | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |