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  stm-4 1 Datasheet PDF File

For stm-4 1 Found Datasheets File :: 3442    Search Time::1.594ms    
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    MTP12N06EZL MTP12N06EZL_D ON2543 MTP12N06 MTP12N06EZL-D

ON Semiconductor
MOTOROLA[Motorola, Inc]
http://
Part No. MTP12N06EZL MTP12N06EZL_D ON2543 MTP12N06 MTP12N06EZL-D
OCR Text sTM Data Sheet TMOS E-FET.TM High Energy Power FET N-Channel Enhancement-Mode Silicon Gate This advanced TMOS power FET is designed to ...4 kV ESD protection (human body model). * * * * * ESD Protected 4 kV Human Body Model 400 V Machine ...
Description TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.180 OHM

File Size 221.74K  /  8 Page

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    MTP12N10E MTP12N10E_D ON2545 MTP12N10E-D

ON Semiconductor
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
Part No. MTP12N10E MTP12N10E_D ON2545 MTP12N10E-D
OCR Text sTM Data Sheet TMOS E-FET.TM Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This advanced TMOS E-FET is designed...4.03 mH, RG = 25 , Peak IL = 12 A) (See Figures 15, 16 and 17) EAS 290 mJ THERMAL CHARACTERISTICS...
Description TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 12 AMPERES 100 VOLTS RDS(on) = 0.16 OHM
TMOS POWER FET 12 AMPERES 60 VOLTS
From old datasheet system

File Size 239.56K  /  6 Page

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    MTP12P10 MTP12P10_D ON2547

MOTOROLA[Motorola, Inc]
ON Semi
Part No. MTP12P10 MTP12P10_D ON2547
OCR Text sTM Data Sheet Power Field Effect Transistor This TMOS Power FET is designed for medium voltage, high speed power switching applications...4.2 3.8 -- mhos 2.0 1.5 -- 4.5 4.0 0.3 Vdc Ohm Vdc V(BR)DSS IDSS -- -- IGSSF IGSSR -- -- 10 100 100 ...
Description From old datasheet system
TMOS POWER FET 12 AMPERES 60 VOLTS
TMOS POWER FET 12 AMPERES 100 VOLTS RDS(on) = 0.3 OHM

File Size 190.83K  /  6 Page

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    MTP15N06VL MTP15N06VL_D ON2553

Motorola, Inc.
ON Semi
MOTOROLA[Motorola, Inc]
Part No. MTP15N06VL MTP15N06VL_D ON2553
OCR Text sTM Data Sheet TMOS VTM Power Field Effect Transistor TMOS V is a new technology designed to achieve an on-resistance area product about...4.5 -- -- nH nH ta tb QRR -- -- -- -- 0.96 0.85 63 42 21 0.140 1.6 -- -- -- -- -- C ns Vdc -- -- -- ...
Description TMOS POWER FET 15 AMPERES 60 VOLTS RDS(on) = 0.085 OHM
From old datasheet system

File Size 215.91K  /  8 Page

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    MTP15N06V ON2554

Motorola, Inc.
ON Semi
MOTOROLA[Motorola, Inc]
Part No. MTP15N06V ON2554
OCR Text sTM Data Sheet TMOS V Power Field Effect Transistor TMOS V is a new technology designed to achieve an on-resistance area product about o...4.5 7.5 -- -- nH nH ta tb QRR -- -- -- -- 1.05 1.5 59.3 46 13.3 0.165 1.6 -- -- -- -- -- C ns Vdc --...
Description TMOS POWER FET 15 AMPERES 60 VOLTS RDS(on) = 0.12 OHM
From old datasheet system

File Size 163.67K  /  8 Page

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    MTP16N25E MTP16N25E_D ON2556 MTP16N25E-D

ON Semiconductor
MOTOROLA[Motorola, Inc]
Part No. MTP16N25E MTP16N25E_D ON2556 MTP16N25E-D
OCR Text sTM Data Sheet TMOS E-FET.TM Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This advanced TMOS E-FET is designed...4.5 -- -- nH nH ta tb QRR -- -- -- -- 0.915 1.39 234 170 64 2.165 1.5 -- -- -- -- -- C ns Vdc -- -- ...
Description TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 16 AMPERES 250 VOLTS RDS(on) = 0.25 OHM
From old datasheet system

File Size 222.23K  /  8 Page

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    MTP23P06V ON2569

Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
Part No. MTP23P06V ON2569
OCR Text sTM Data Sheet TMOS VTM Power Field Effect Transistor TMOS V is a new technology designed to achieve an on-resistance area product about...4.5 7.5 -- -- nH nH ta tb QRR -- -- -- -- 2.2 1.8 142.2 100.5 41.7 0.804 3.5 -- -- -- -- -- C ns Vdc...
Description TMOS POWER FET 23 AMPERES 60 VOLTS RDS(on) = 0.120 OHM 23 A, 60 V, 0.12 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
From old datasheet system

File Size 192.44K  /  8 Page

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    MTP2P50 MTP2P50E ON2583

MOTOROLA[Motorola, Inc]
Part No. MTP2P50 MTP2P50E ON2583
OCR Text sTM Data Sheet TMOS E-FET.TM Power Field Effect Transistor P-Channel Enhancement-Mode Silicon Gate This high voltage MOSFET uses an adv...4.0 Apk, L = 10 mH, RG = 25 ) Thermal Resistance -- Junction to Case Thermal Resistance -- Junction ...
Description From old datasheet system
TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 6.0 OHM

File Size 230.76K  /  8 Page

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    MTP3055VL MTP3055VL_D ON2587

Motorola, Inc.
ON Semi
MOTOROLA[Motorola, Inc]
Part No. MTP3055VL MTP3055VL_D ON2587
OCR Text sTM Data Sheet TMOS VTM Power Field Effect Transistor TMOS V is a new technology designed to achieve an on-resistance area product about...4.5 7.5 -- -- nH nH ta tb QRR -- -- -- -- 0.97 0.86 55.7 37 18.7 0.116 1.3 -- -- -- -- -- C ns Vdc -...
Description TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.18 OHM
From old datasheet system

File Size 161.53K  /  8 Page

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    MTP3055 MTP3055V MTP3055V_D ON2588

Motorola Mobility Holdings, Inc.
ON Semi
MOTOROLA[Motorola, Inc]
Part No. MTP3055 MTP3055V MTP3055V_D ON2588
OCR Text sTM Data Sheet TMOS VTM Power Field Effect Transistor TMOS V is a new technology designed to achieve an on-resistance area product about...4.5 7.5 -- -- nH nH ta tb QRR -- -- -- -- 1.0 0.91 56 40 16 0.128 1.6 -- -- -- -- -- C ns Vdc -- -- ...
Description TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.15 OHM TMOS是功率场效应晶体02安培的RDSon)\u003d 0.15欧姆
From old datasheet system

File Size 160.18K  /  8 Page

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For stm-4 1 Found Datasheets File :: 3442    Search Time::1.594ms    
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