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  t hs h a d Datasheet PDF File

For t hs h a d Found Datasheets File :: 2261    Search Time::1.75ms    
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    BU2523 BU2523AF

NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
Part No. BU2523 BU2523aF
OCR Text ...dIOdE ICsat ICsat 90 % t IC IB I B end t 5 us 6.5 us 16 us ts IB IBend tf 10 % t VCE t - IBM t Fig.1. Swi...hs = f(t); parameter d = tp/t Fig.14. ICsat during normal running vs. frequency of operation for ...
Description Inductor; Series:IhLP-2525CZ; Inductance:1.5uh; Inductance tolerance: /- 20 %; terminal type:PCB Surface Mount; Current Rating:9a; Leaded Process Compatible:Yes; Mounting type:Surface Mount; Packaging:tape and Reel 扩散硅功率晶体管
Silicon diffused Power transistor

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    BU2525AF

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BU2525aF
OCR Text ... 10 % Oscilloscope IB t ts IBend Vertical 100R 6V 30-60 hz 1R t - IBM Fig.1. test circuit for VCEOsust. Fig.4. S...hs = f(t); parameter d = tp/t Fig.15. Forward bias safe operating area. ths = 25 C ICdC &amp; ICM = f...
Description Silicon diffused Power transistor

File Size 70.77K  /  7 Page

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    BU2525AX

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BU2525aX
OCR Text ... 10 % Oscilloscope IB t ts IBend Vertical 100R 6V 30-60 hz 1R t - IBM Fig.1. test circuit for VCEOsust. Fig.4. S...hs = f(t); parameter d = tp/t Fig.15. Forward bias safe operating area. ths = 25 C ICdC &amp; ICM = f...
Description Silicon diffused Power transistor

File Size 72.99K  /  7 Page

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    BU2525DF BU2508DF

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BU2525dF BU2508dF
OCR Text ...150 v nominal adjust for ICsat t Lc IB IBend t 10us 13us d.U.t. IBend LB Cfb Rbe 32us VCE -VBB t Fig.1. Switching times w...hs = f(t); parameter d = tp/t Ptot 1 1 ms 0.1 10 ms dC 0.01 1 10 100 1000 VCE / V Fig...
Description Silicon diffused Power transistor

File Size 71.42K  /  7 Page

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    BU2525DX

NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
Part No. BU2525dX
OCR Text ...150 v nominal adjust for ICsat t Lc IB IBend t 10us 13us d.U.t. IBend LB Cfb Rbe 32us VCE -VBB t Fig.1. Switching times w...hs = f(t); parameter d = tp/t Ptot 1 1 ms 0.1 10 ms dC 0.01 1 10 100 1000 VCE / V Fig...
Description Silicon diffused Power transistor 12 a, 800 V, NPN, Si, POWER tRaNSIStOR

File Size 73.42K  /  7 Page

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    BU2527AF

NXP Semiconductors
Philips Semiconductors
Part No. BU2527aF
OCR Text ... 10 % Oscilloscope IB t ts IBend Vertical 100R 6V 30-60 hz 1R t - IBM Fig.1. test circuit for VCEOsust. Fig.4. S...hs = f(t); parameter d = tp/t Fig.15. Forward bias safe operating area. ths = 25 C ICdC &amp; ICM = f...
Description Silicon diffused Power transistor

File Size 70.76K  /  7 Page

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    BU2527AX

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BU2527aX
OCR Text ... 10 % Oscilloscope IB t ts IBend Vertical 100R 6V 30-60 hz 1R t - IBM Fig.1. test circuit for VCEOsust. Fig.4. S...hs = f(t); parameter d = tp/t Fig.15. Forward bias safe operating area. ths = 25 C ICdC &amp; ICM = f...
Description Silicon diffused Power transistor

File Size 72.94K  /  7 Page

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    BU2527DF

NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
Part No. BU2527dF
OCR Text ...150 v nominal adjust for ICsat t Lc IB I B end t 5 us 6.5 us 16 us VCE t d.U.t. IBend LB Cfb Rbe -VBB Fig.1. Switching times ...hs = f(t); parameter d = tp/t Ptot 1 1 ms 0.1 10 ms dC 0.01 1 10 100 1000 VCE / V Fig...
Description Silicon diffused Power transistor 12 a, 800 V, NPN, Si, POWER tRaNSIStOR

File Size 80.99K  /  7 Page

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    BU2527DX

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BU2527dX
OCR Text ...150 v nominal adjust for ICsat t Lc IB I B end t 5 us 6.5 us 16 us VCE t d.U.t. IBend LB Cfb Rbe -VBB Fig.1. Switching times ...hs = f(t); parameter d = tp/t Ptot 1 1 ms 0.1 10 ms dC 0.01 1 10 100 1000 VCE / V Fig...
Description Silicon diffused Power transistor

File Size 83.04K  /  7 Page

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    BU4506AX BU4506

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BU4506aX BU4506
OCR Text ... hFE ths = 25 C ths = 85 C t VCE = 1 V IB IB1 t 20us 26us 64us IB2 10 VCE 1 0.01 t 0.1 1 IC / a 10 Fig.3. Switching times waveforms (16 khz). Fig.6. high and low dC current gain. ICsat 90 % IC 100 ...
Description Silicon diffused Power transistor

File Size 44.79K  /  6 Page

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For t hs h a d Found Datasheets File :: 2261    Search Time::1.75ms    
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