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0.0062 Datasheet PDF File

For 0.0062 Found Datasheets File :: 2723 Search Time::1.984ms
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				NEC
Part No.	2SC4552
OCR Text	...(VCE = 2 V, IC = 3 A) VCE(sat) 0.3 V (IC = 8 A, IB = 0.4 A) * Mold package that does not require an insulating board or insulation bushing ABSOLUTE MAXIMUM RATINGS (Ta = 25C) Parameter Collector to base voltage Collector to emitter vo...
Description	Silicon transistor
File Size	165.53K / 7 Page	View it Online	Download Datasheet

				PANASONIC[Panasonic Semiconductor]
Part No.	2SC4562
OCR Text	...nit: mm s Features q q q 0.425 1.250.1 0.425 High transition frequency fT. Small collector output capacitance Cob. S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing an...
Description	Silicon NPN epitaxial planer type(For high-frequency amplification)
File Size	34.43K / 2 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	2SC4568
OCR Text	...CKAGE DIMENSIONS (Units: mm) 0.4 -0.05 +0.1 FEATURES * High gain bandwidth product fT = 5.5 GHz TYP. Cob = 0.7 pF TYP. * Surface mount package EIAJ: SC-59 2.90.2 1.5 0.65 -0.15 +0.1 0.95 0.95 * Low output capacitan...
Description	NPN SILICON EPITAXIAL TRANSISTOR UHF TV TUNER OSC/MIXER
File Size	49.89K / 8 Page	View it Online	Download Datasheet

				NEC
Part No.	2SC4568
OCR Text	...CKAGE DIMENSIONS (Units: mm) 0.4 -0.05 +0.1 FEATURES * High gain bandwidth product fT = 5.5 GHz TYP. Cob = 0.7 pF TYP. * Surface mount package EIAJ: SC-59 2.90.2 1.5 0.65 -0.15 +0.1 0.95 0.95 * Low output capacitan...
Description	NPN SILICON EPITAXIAL TRANSISTOR UHF TV TUNER OSC/MIXER
File Size	60.92K / 9 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	2SC4569
OCR Text	...CKAGE DIMENSIONS (Units: mm) 0.4 -0.05 +0.1 FEATURES * High gain bandwidty product fT = 5.0 GHz TYP. Cob = 0.9 pF TYP. * Surface mount package EIAJ: SC-59 2.90.2 1.5 0.65 -0.15 +0.1 0.95 0.95 * Low output capacitan...
Description	UHF TV TUNER OSC/MIXER NPN SILICON EPITAXIAL TRANSISTOR
File Size	50.03K / 8 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SC4897
OCR Text	...s * High speed switching time: 0.5 s max * High breakdown voltage, high current: VCBO = 1500 V, IC = 20 A * Suitable for large size CRT Display 1. Base 2. Collector 3. Emitter 3 1 2 Absolute Maximum Ratings (Ta = 25C) Item Colle...
Description	From old datasheet system Silicon NPN Triple Diffused
File Size	20.69K / 4 Page	View it Online	Download Datasheet

				NEC
Part No.	2SC5179-T1 2SC5179-T2 2SC5179
OCR Text	... mm) 2.10.1 1.250.1 2.00.2 +0.1 0.3 -0 0.65 ORDERING INFORMATION PART NUMBER 2SC5179-T1 QUANTITY ARRANGEMENT Embossed tape, 8 mm wide, pin No. 3 (Collector) facing the perforations Embossed tape, 8 mm wide, pins No. 1 (Emitter) a...
Description	NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
File Size	67.97K / 13 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	2SC5179 2SC5179-T2 2SC5179-T1
OCR Text	... mm) 2.10.1 1.250.1 2.00.2 +0.1 0.3 -0 0.65 ORDERING INFORMATION PART NUMBER 2SC5179-T1 QUANTITY ARRANGEMENT Embossed tape, 8 mm wide, pin No. 3 (Collector) facing the perforations Embossed tape, 8 mm wide, pins No. 1 (Emitter) a...
Description	NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
File Size	55.86K / 12 Page	View it Online	Download Datasheet

				NEC[NEC] NEC Corp.
Part No.	2SC5434 2SC5434-T1
OCR Text	...flat package (1.4 mm x 1.8 mm x 0.59 mm: TYP.) * Contains same chip as 2SC5008 PACKAGE DIMENSIONS (in mm) 1.4 0.05 0.8 0.1 1.4 0.1 (0.9) 0.45 0.45 0.2 +0.1 -0 ABSOLUTE MAXIMUM RATINGS (TA = 25 C) PARAMETER Collector to Base...
Description	Reduced noise high frequency amplification transistor NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION High-Frequecy Low-Noise Amplifier NPN Transistor(高频低噪声放大器NPN晶体
File Size	59.68K / 8 Page	View it Online	Download Datasheet

				SANYO
Part No.	2SC5777
OCR Text	... unit : mm 2174A [2SC5777] 16.0 5.0 3.4 5.6 3.1 8.0 22.0 High speed. High breakdown voltage (VCBO=1600V). High reliability (Adoption of HVP process). Adoption of MBIT process. On-chip damper diode. 21.0 4.0 2.8 2.0 20.4 0.7 1 2 5...
Description	Horizontal Deflection Switching Transistors
File Size	38.35K / 5 Page	View it Online	Download Datasheet

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