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				Toshiba Semiconductor NEC[NEC] NEC Corp. NEC, Corp.
Part No.	2SC2885 2SC29461 2SC2946 2SC2946M 2SC29461M 2SC2885L 2SC2885K
OCR Text	... 25C) Tj Tstg Ratings 330 200 7.0 2.0 4.0 1.0 15 600 150 -55 to +150 Unit V V V A A A W mW C C * PW 300 s, duty cycle 10% The information in this document is subject to change without notice. Before using this document, please confi...
Description	Silicon transistor SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits TRANSISTOR \| BJT \| NPN \| 200V V(BR)CEO \| 2A I(C) \| TO-251AA SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits 晶体管\|晶体管\| npn型\| 200伏五（巴西）总裁\|甲一（c）\|51AA NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING NPN硅外延晶体管高压高速开
File Size	125.41K / 6 Page	View it Online	Download Datasheet

				NEC
Part No.	2SC4331 2SC4331-Z
OCR Text	...r saturation voltage VCE(sat) = 0.3 V MAX. (@IC = 3 A) * Fast switching speed: tf 0.4 s MAX. (@IC = 3 A) * High DC current gain and excellent linearity ABSOLUTE MAXIMUM RATINGS (TA = 25C) Parameter Collector to base voltage Collector ...
Description	High-speed switching silicon power transistor
File Size	113.53K / 7 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SC454
OCR Text	... -- 1 Typ -- -- -- -- -- -- 0.63 -- 230 -- -- 35 Max -- -- -- 0.5 0.5 500 0.75 0.2 -- 3.5 25 -- Unit V V V A A Test conditions I C = 10 A, IE = 0 I C = 1 mA, RBE = I E = 10 A, IC = 0 VCB = 18 V, IE = 0 VEB = 2 V, IC = 0 VCE = ...
Description	Silicon NPN Epitaxial
File Size	34.63K / 8 Page	View it Online	Download Datasheet

				Rohm
Part No.	2SC5880
OCR Text	...ns (Unit : mm) ATV 6.8 2.5 0.65Max. 1.0 0.5 2.54 2.54 0.9 (1) (2) (3) (1) Emitter (2) Collector (3) Base 1.05 14.5 4.4 0.45 Taping specifications Symbol : C5880 Applications Low frequency amplifier High ...
Description	Power transistor (60V/ 2A) Power transistor (60V, 2A)
File Size	67.17K / 4 Page	View it Online	Download Datasheet

				Wing Shing Computer Components
Part No.	2SD1294
OCR Text	... Test Condition VCB= 60V , IE=0 VCB= 60V , IB=0 VCE= 5V , IC=0.5A IC=0.5A , IB=0.001A Min Typ Max 10 10 12000 1.5 Unit A A 2000 V Wing Shing Computer Components Co., (H.K.)Ltd. Homepage: http://www.wingshing.com T...
Description
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				TOSHIBA
Part No.	2SD1631
OCR Text	...OSHIBA 2-7D101A Weight: 0.2 g (typ.) Equivalent Circuit COLLECTOR BASE EMITTER 1 2003-02-04 2SD1631 Electrical Characteristics (Ta = 25C) Characteristics Collector cut-off current Emitter cut-off current Collector-...
Description	Transistor Silicon NPN Epitaxial Type (PCT process) (Darlington power transistor) Micro Motor Drive Hammer Drive Applications Switching Applicati
File Size	123.32K / 6 Page	View it Online	Download Datasheet

				Hitachi,Ltd. Hitachi Semiconductor
Part No.	2SD2423
OCR Text	... 3 2 1 2, 4 ID 2 k (Typ) 0.5 (Typ) 3 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SD2423 Absolute Maximum Ratings (Ta = 25C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage ...
Description	Silicon NPN Epitaxial, Darlington Silicon NPN Epitaxial/ Darlington
File Size	33.60K / 6 Page	View it Online	Download Datasheet

				Hitachi,Ltd. HITACHI[Hitachi Semiconductor]
Part No.	2SJ246 2SJ246L 2SJ246S
OCR Text	...t conditions ID = -10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = -25 V, VGS = 0 VDS = -10 V, ID = -1 mA -------------------------------------------------------------------------------------- -------------------------------...
Description	SILICON P-CHANNEL MOS FET
File Size	38.27K / 7 Page	View it Online	Download Datasheet

				Hitachi Semiconductor
Part No.	2SK1832 2SK1831
OCR Text	...10 250 V A A I G = 100 A, VDS = 0 VGS = 25 V, VDS = 0 VDS = 360 V, VGS = 0 VDS = 400 V, VGS = 0 VGS(off) RDS(on) 2.0 -- -- \|yfs\| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 4.0 -- -- -- -- -- -- -- -- -- -- 0.6 0.7 7.0 1050 280 40 15 60 ...
Description	Silicon N Channel MOS FET Silicon N-Channel MOS FET
File Size	32.75K / 6 Page	View it Online	Download Datasheet

				Hitachi Semiconductor
Part No.	2SK1835
OCR Text	...V(BR)DSS I GSS Min 1500 -- -- 2.0 -- 0.9 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- 4.6 1.4 1700 230 100 25 80 230 80 0.85 2500 Max -- 1 500 4.0 7.0 -- -- -- -- -- -- -- -- -- -- Unit V A A V S pF pF pF ns ns ns ns V ns I F = 4 A, VGS = 0 ...
Description	Silicon N Channel MOS FET Silicon N-Channel MOS FET
File Size	47.54K / 10 Page	View it Online	Download Datasheet

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