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  175c Datasheet PDF File

For 175c Found Datasheets File :: 15912    Search Time::1.891ms    
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    AOT462

Alpha & Omega Semiconductors
Part No. AOT462
OCR Text ...pation P D is based on T J(MAX)=175c, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction...
Description N-Channel Enhancement Mode Field Effect Transistor

File Size 64.88K  /  5 Page

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    FST603510

Microsemi Corporation
Part No. FST603510
OCR Text ...m = 60a: j = 25c* fm = 60a: j = 175c* 8.3ms, half sine, j = 175c c = 135c, square wave, 0jc = 1.0c/w rrm, j = 125c* -55c to 175c 1.0c/w -55c to 175c 0.6c/w v v t t i v i t t t t t junction to case junction to case r t r common cathode a=co...
Description Schottky Powermod

File Size 111.96K  /  2 Page

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    IRF2804S-7PPBF

International Rectifier
Part No. IRF2804S-7PPBF
OCR Text ...hnology Ultra Low On-Resistance 175c Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free VDSS = 40V G S Description Specifically designed for Automotive applications, this HEXFET(R) Power MOSFET u...
Description HEXFET? Power MOSFET
HEXFET㈢ Power MOSFET

File Size 661.76K  /  11 Page

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    IRF2907ZS-7PPBF06

International Rectifier
Part No. IRF2907ZS-7PPBF06
OCR Text 175c Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax HEXFET(R) Power MOSFET D VDSS = 75V RDS(on) = 3.8m G S Description Specifically designed for high current, high reliability applications, this ...
Description HEXFET? Power MOSFET
HEXFET㈢ Power MOSFET

File Size 666.80K  /  11 Page

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    IRF5210PBF

International Rectifier
Part No. IRF5210PBF
OCR Text 175c Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Lead-Free HEXFET(R) Power MOSFET D IRF5210PbF VDSS = -100V RDS(on) = 0.06 G S ID = -40A Description Fifth Generation HEXFETs from International Rect...
Description HEXFET Power MOSFET

File Size 188.15K  /  9 Page

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    IRFP4004PBF IRFP4004PBF-15

International Rectifier
Part No. IRFP4004PBF IRFP4004PBF-15
OCR Text .../dt 690A/s, VDD V(BR)DSS, TJ 175c. Pulse width 400s; duty cycle 2%. Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Coss eff. (ER) is a fixed capacitance th...
Description High Efficiency Synchronous Rectification in SMPS
IRFP4004PBF

File Size 292.81K  /  8 Page

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    APT30DC60HJ

Microsemi Corporation
Part No. APT30DC60HJ
OCR Text ...ard voltage i f = 30a t j = 175c 2 2.4 v t j = 25c 150 600 i rm maximum reverse leakage current v r = 600v t j = 175c 300 3000 a q c total capacitive charge i f = 30a, v r = 300v di/dt =1000a/s 42 nc f...
Description ISOTOP SiC Diode Full Bridge Power Module

File Size 66.82K  /  3 Page

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    IRFP4368PBF

International Rectifier
Part No. IRFP4368PBF
OCR Text ...dt 1740A/s, VDD V(BR)DSS, TJ 175c. Pulse width 400s; duty cycle 2%. Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Coss eff. (ER) is a fixed capacitance th...
Description HEXFET Power MOSFET

File Size 275.42K  /  8 Page

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    IRFP4468PBF

International Rectifier
Part No. IRFP4468PBF
OCR Text .../dt 600A/s, VDD V(BR)DSS, TJ 175c. Pulse width 400s; duty cycle 2%. Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Coss eff. (ER) is a fixed capacitance th...
Description HEXFET Power MOSFET

File Size 293.82K  /  8 Page

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    TY Semiconductor Co., Ltd
Part No. AOK20B135D1
OCR Text ....57 1.8 t j =125c - 1.86 - t j =175c - 2 - t j =25c - 1.46 1.8 t j =125c - 1.51 t j =175c - 1.52 - v ge(th) gate-emitter threshold voltage 4.7 5.3 5.9 v t j =25c - - 10 t j =125c - - 800 t j =175c - - 8000 i ges gate-emitter leakage current...
Description Latest AlphaIGBT (a IGBT) technology

File Size 911.74K  /  8 Page

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For 175c Found Datasheets File :: 15912    Search Time::1.891ms    
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