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Kersemi Electronic Co., Ltd.
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Part No. |
FQPF7N60
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OCR Text |
... 1/8 from case for 5 seconds 300 c symbol parameter typ max units r jc thermal resistance, junction-to-case -- 2.60 c w r ja thermal ...gd gate-drain charge -- 14.5 -- nc drain-source diode characteristics and maximum ratings i s maximu... |
Description |
600V N-Channel MOSFET
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File Size |
771.77K /
7 Page |
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it Online |
Download Datasheet |
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FAIRCHILD SEMICONDUCTOR CORP
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Part No. |
SSP2N60BJ69Z
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OCR Text |
... 1/8 " from case for 5 seconds 300 c symbol parameter ssp2n60b sss2n60b units r jc thermal resistance, junction-to-case max. 2.32 5.5 c / ...gd gate-drain charge -- 5.4 -- nc drain-source diode characteristics and maximum ratings i s maximum... |
Description |
2 A, 600 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET
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File Size |
855.14K /
10 Page |
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it Online |
Download Datasheet |
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SIEMENS[Siemens Semiconductor Group] SIEMENS AG
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Part No. |
C67076-A2510-A67 BSM15GD60DN2 SIEMENSAG-BSM15GD60DN2
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OCR Text |
...
td(on)
35 70
ns
VCC = 300 V, VGE = 15 V, IC = 15 A RGon = 68
Rise time
tr
50 100
VCC = 300 V, VGE = 15 V, IC = 15 A RGon ...GD 60 DN2
Power dissipation Ptot = (TC) parameter: Tj 150 C
55 W
Safe operating area IC = (V... |
Description |
IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes) 15 A, 600 V, N-CHANNEL IGBT
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File Size |
122.21K /
9 Page |
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it Online |
Download Datasheet |
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IRF[International Rectifier]
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Part No. |
IRFZ48ZSPBF IRFZ48ZLPBF IRFZ48ZPBF
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OCR Text |
...ing torque, 6-32 or M3 screw
300 (1.6mm from case ) 10 lbf*in (1.1N*m)
Thermal Resistance
Parameter
RJC RCS RJA RJA Junction-to-Case...gd, C ds SHORTED C rss = C gd C oss = C ds + C gd
12.0 ID= 37A
VGS, Gate-to-Source Voltage (V)
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Description |
AUTOMOTIVE MOSFET
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File Size |
277.01K /
12 Page |
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it Online |
Download Datasheet |
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Price and Availability
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