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ONSEMI[ON Semiconductor]
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| Part No. |
NIF5003NT1 NIF5003NT1G NIF5003NT3 NIF5003NT3G NIF5003N
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| OCR Text |
... Vdc 1 2 3
4
SOT-223 CASE 318E STYLE 3
Internally Limited W
MARKING DIAGRAM
1 GATE AYW 5003N G G 2 DRAIN 3 SOURCE 4 DRAIN
TJ...04 0.035 0.03 2 3
Figure 2. Transfer Characteristics
TJ = 25C VGS = 5 V
VGS = 10 V
4
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| Description |
Self−Protected FET with Temperature and Current Limit
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| File Size |
64.51K /
5 Page |
 View
it Online |
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ONSEMI[ON Semiconductor]
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| Part No. |
MAC08BT105 MAC08BT1G MAC08MT1G MAC08MT1 MAC08BT1
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| OCR Text |
...0 A A Value Unit V SOT-223 CASE 318E STYLE 11 1 A Y W AC08X = = = =
MARKING DIAGRAM
4 AYW AC08x G G 2 3
I2t PGM PG(AV) TJ Tstg
0.4...04 ISSUE L
D b1
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMEN... |
| Description |
Silicon Bidirectional Thyristor(0.8A锛?00V涓????????纭???哥?)
Sensitive Gate Triacs Silicon Bidirectional Thyristors
Silicon Bidirectional Thyristor(0.8A00V三端双向可控硅晶闸管) 200 V, 0.8 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-261AA
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| File Size |
90.96K /
7 Page |
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it Online |
Download Datasheet |
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ONSEMI
ON Semiconductor
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| Part No. |
NTF6P02T3 NTF6P02T3-D NTF6P02T3G NTF6P02T3/D
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| OCR Text |
...MARKING DIAGRAM
SOT-223 CASE 318E STYLE 3
AWW 6P02
C/W RJL RJA RJA TL 15 71.4 160 260 C
A WW 6P02
= Assembly Location = Work ...04 0.03 0.02 2 4 6 8 10 12 14 -ID, DRAIN CURRENT (AMPS)
0.15
ID = -6.0 A TJ = 25C
0.1
0.... |
| Description |
Receptacle With A Wire Wrap Tail NTF6P02T3
Power MOSFET -6.0 Amps, -20 Volts P?Channel SOT23(-6.0A,-20V，P通道，SOT-23封装的功率MOSFET) 10 A, 20 V, 0.05 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-261AA
Power MOSFET -6.0 Amps, -20 Volts P??annel SOT?23
Power MOSFET -6.0 Amps, -20 Volts P-Channel SOT-223
20V P-ch HD3e SOT223
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| File Size |
67.74K /
8 Page |
View
it Online |
Download Datasheet |
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