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SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
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| Part No. |
Q62702G62 CGY184
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| OCR Text |
34dbm) output power at 3.5 V Overall power added efficiency 43 % Fully integrated 4 stage amplifier Power ramp control Input matched to 50 ohms, simple output match
ESD: Electrostatic discharge sensitive device, observe handling precauti... |
| Description |
From old datasheet system
GaAs MMIC (Power amplifier for PCN applications 2.5 W 34dbm output power at 3.5 V)
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| File Size |
139.23K /
14 Page |
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RF Micro Devices, Inc.
RFMD[RF Micro Devices]
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| Part No. |
RF2333PCBA RF2333
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| OCR Text |
...put * 10dB Small Signal Gain * +34dbm Output IP3 * +18.5dBm Output Power * Good Gain Flatness
GND 1 GND 2 RF IN 3
5 RF OUT
4 GND
Ordering Information
RF2333 RF2333 PCBA General Purpose Amplifier Fully Assembled Evaluation Board... |
| Description |
GENERAL PURPOSE AMPLIFIER
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| File Size |
83.89K /
6 Page |
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it Online |
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EUDYNA[Eudyna Devices Inc]
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| Part No. |
ESN35A090IV EGN35A090IV
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| OCR Text |
... Dissipasion [W]
im l e
Pin=34dbm
a in
ry
Input Power [dBm]
40 30 20 10 0
23 25 27 29 31 33 35 37 39 41 43
Power Derating Curve
160 140 120 100 80 60 40 20 0 0 50 100 150 200
o
250
300
Case Temperature [ C]
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| Description |
High Voltage - High Power GaN-HEMT
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| File Size |
104.70K /
4 Page |
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it Online |
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SAMSUNG[Samsung semiconductor]
Samsung Electronic
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| Part No. |
S1A0426C01-S0B0 S1A0426C01 S1A0426C01-A0B0
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| OCR Text |
...dB, fc = 1660kHz, m=0% Vo(3) = -34dbm, fi = 455kHz VI(3) = 85dB, fi = 455kHz VI(2) = 95dB, fc= 1660kHz, Vcc = 7.8V VI(3) = 85dB, fi = 455kHz Vo(4) = 0dBm, f = 1kHz Po = 50mW, f = 1kHz RL = 8, THD = 10%, f = 1kHz Test Condition Min. Typ. Max... |
| Description |
AM/FM 1 CHIP RADIO
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| File Size |
69.83K /
4 Page |
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Sony Corporation
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| Part No. |
CXG1189AXR
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| OCR Text |
... 1. Power incident on Tx, Pin = 34dbm, 824 to 915MHz, Vctl (H) = 2.8V, Vctl (L) = 0V 2. Power incident on Tx, Pin = 32dBm, 1710 to 1910MHz, Vctl (H) = 2.8V, Vctl (L) = 0V 3. Power incident on Tx, Pin = 29dBm, 1920 to 1980MHz, Vctl (H) = 2.8... |
| Description |
High Power SPDT Switch
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| File Size |
163.69K /
5 Page |
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TOSHIBA[Toshiba Semiconductor]
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| Part No. |
TMD1925-3
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| OCR Text |
...n Distortion
High Power P1dB=34dbm(min) @1.9 to 2.5GHz High Gain G1dB=27dB(min)@1.9 to 2.5GHz
ABSOLUTE MAXIMUM RATINGS
CHARACTERISTICS DRAIN SUPPLY VOLTAGE GATE SUPPLY VOLTAGE INPUT POWER STORAGE TEMPERATURE
( Ta= 25C )
SYMBOL V... |
| Description |
Microwave Power MMIC Amplifier
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| File Size |
78.44K /
5 Page |
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it Online |
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Price and Availability
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