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Powerex, Inc. POWEREX[Powerex Power Semiconductors]
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Part No. |
ME601615 ME601215
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Description |
Three-Phase Diode Bridge Modules (150 amperes/1200-1600 volts) 3 PHaSE, 150 a, 1200 v, SILICON, BRIDGE RECTIFIER DIODE
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File Size |
71.55K /
4 Page |
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it Online |
Download Datasheet |
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Microsemi, Corp. advanced Power Technology Ltd. aDPOW[advanced Power Technology]
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Part No. |
1214-300M
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Description |
L-Band 1200-1400 MHz, Class C, Common Base-Pulsed; P(out) (W): 300; P(in) (W): 40; Gain (dB): 8.75; vcc (v): 40; Pulse Width (µsec): 150; Duty Cycle (%): 10; Case Style: 55ST-1 L BaND, Si, NPN, RF POWER TRaNSISTOR 300 Watts - 40 volts, 150ms, 10% Radar 1200 - 1400 MHz
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File Size |
117.23K /
4 Page |
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it Online |
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Central Semiconductor Corp. Central Semiconductor, Corp.
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Part No. |
CS218-35D CS218-35PB CS218-35B CS218-35N CS218-35M
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Description |
SILICON CONTROLLED RECTIFIER 35 aMP, 200 THRU 1200 vOLTS 35 a, 400 v, scr, TO-218 SILICON CONTROLLED RECTIFIER 35 aMP, 200 THRU 1200 vOLTS 35 a, 200 v, scr, TO-218 SILICON CONTROLLED RECTIFIER 35 aMP, 200 THRU 1200 vOLTS 35 a, 600 v, scr, TO-218 SILICON CONTROLLED RECTIFIER 35 aMP, 200 THRU 1200 vOLTS 35 a, 800 v, scr, TO-218 SILICON CONTROLLED RECTIFIER 35 aMP, 200 THRU 1200 vOLTS 35 a, 1000 v, scr, TO-218 SILICON CONTROLLED RECTIFIER 35 aMP, 200 THRU 1200 vOLTS 35 a, 1200 v, scr, TO-218
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File Size |
107.37K /
2 Page |
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it Online |
Download Datasheet |
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POWEREX[Powerex Power Semiconductors]
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Part No. |
CM100TJ-24F
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Description |
128 x 64 pixel format, LED or EL Backlight available Trench Gate Design Six IGBTMOD 100 amperes/1200 volts Trench Gate Design Six IGBTMOD⑩ 100 amperes/1200 volts Trench Gate Design Six IGBTMOD?/a> 100 amperes/1200 volts
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File Size |
97.70K /
4 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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