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Intersil
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Part No. |
HA-2850_883 FN3595
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OCR Text |
... 12kA 2kA Nitride Thickness: 3.5ka 1.5ka WORST CASE CURRENT DENSITY: 0.7 x 105 A/cm2 at 1.8mA SUBSTRATE POTENTIAL (Powered Up): VTRANSISTOR COUNT: 34 PROCESS: Bipolar Dielectric Isolation
Metallization Mask Layout
HA-2850/883
V+
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Description |
Low Power, High Slew Rate, Wideband Operational Amplifier From old datasheet system
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File Size |
171.16K /
12 Page |
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INTERSIL[Intersil Corporation]
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Part No. |
HA-2548_883 FN2472 HA-2548883
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OCR Text |
... 12kA 2kA Nitride Thickness: 3.5ka 1.5ka
NOTE: The Substrate may be left floating (Insulating Die Mount) or it may be mounted on a conductor at a V- potential.
WORST CASE CURRENT DENSITY: 3.6 x 104 A/cm2 SUBSTRATE POTENTIAL (Powered U... |
Description |
From old datasheet system Precision, High Slew Rate, Wideband Operational Amplifier
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File Size |
55.46K /
7 Page |
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it Online |
Download Datasheet |
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INTERSIL[Intersil Corporation]
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Part No. |
HFA1115MJ_ HFA1115_883 HFA1115883 HFA1115MJ_883
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OCR Text |
...Type: Nitride Thickness: 4kA 0.5ka WORST CASE CURRENT DENSITY: TBD TRANSISTOR COUNT: 89 SUBSTRATE POTENTIAL (Powered Up): Floating (Recommend Connection to V-) Type: Metal 2: AICu(2%) Thickness: Metal 2: 16kA 0.8kA
Metallization Mask L... |
Description |
High Speed, Low Power, Output Limiting Closed Loop Buffer Amplifier
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File Size |
486.17K /
5 Page |
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it Online |
Download Datasheet |
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Intersil
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Part No. |
HFA1100_883 FN3615
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OCR Text |
...Type: Nitride Thickness: 4kA 0.5ka WORST CASE CURRENT DENSITY: 2.0 x 105 A/cm2 at 47.5mA TRANSISTOR COUNT: 52 SUBSTRATE POTENTIAL (Powered Up): Floating (Recommend Connection to V-) Type: Metal 2: AICu(2%) Thickness: Metal 2: 16kA 0.8kA
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Description |
850MHz Current Feedback Amplifier From old datasheet system
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File Size |
114.29K /
16 Page |
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it Online |
Download Datasheet |
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Price and Availability
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