...gs
(Ta=25C)
2.540.15
0.7-0.2
+0.3
High collector to emitter voltage VCEO. Optimum for the driver stage of a low-frequency and 25 to 30W output amplifier.
0.70.1
8.60.2
s Features
0.45-0.1
+0.2
s Electrical C...
...xample, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf lif...8) This material may be not reprinted or reproduced whether wholly or partially, without the prior w...
...t IC (mA)
dB 10 dB 9 dB 8 dB 7
f = 10 Hz
2 1 -1
-2 -5 -10 -20 -50 Collector to Base Voltage VCB (V)
Contours of Constant Noise Figure (2) 100 k Signal source resistance Rg () 50 k 20 k 10 k 5k 2k 1k 500 200 -0.01-0.02 -0.05 -...
...A, f = 10.7MHz 150 70 - 0.1 - 0.7 300 2.8 22 1.2 4.0 50 2.0 min typ max - 0.1 -100 -10 220 V V MHz dB pF Unit A A
*h
FE
Rank classification
B 70 ~ 140 C 110 ~ 220 hFE
Rank
1
Transistor
PC -- Ta
500 -30 Ta=25C 450 -25
...
Description
Silicon PNP epitaxial planer type(For high-frequency amplification Complementary to 2SC1359)
....01 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 Base to Emitter Voltage VBE (V) DC Current Transfer Ratio hFE 1,000
DC Current Transfer Ratio vs. Collector Current VCE = -12 V 800 600 400 200 0 -0.01 -0.03 Ta = 100C 75 50 25 0 -25
-0.1
-0.3...
...5-0.1 1.27 1.27
13.50.5
0.7-0.2
0.70.1
8.60.2
s Features
0.45-0.1
+0.2
C C
s Electrical Characteristics
Parameter Collector cutoff current Collector to emitter voltage Emitter to base voltage Forward current tran...
...xample, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf lif...8) This material may be not reprinted or reproduced whether wholly or partially, without the prior w...
Description
Power Device - Power Transistors - Others Silicon PNP epitaxial planar type (For low-frequency power amplification Complementary)