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    ON Semi
Part No. MTP1N60E_D ON2561
OCR Text designer'sTM Data Sheet TMOS E-FET.TM Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading ...
Description TMOS POWER FET 1.0 AMPERES 600 VOLTS
From old datasheet system

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    MTP33N10E_D MTP33N10 ON2594 MTP33N10E MTP33N10E-D

ON Semiconductor
MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
Motorola, Inc.
Part No. MTP33N10E_D MTP33N10 ON2594 MTP33N10E MTP33N10E-D
OCR Text designer'sTM Data Sheet TMOS E-FET.TM Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This advanced TMOS E-FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient ...
Description TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 33 AMPERES 100 VOLTS RDS(on) = 0.06 OHM

File Size 240.12K  /  8 Page

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    Vishay
Part No. ANT018
OCR Text ...on This report should give the designer a full understanding on how to use optocouplers which provide protection against electric shock for designs. Safety standards for optocouplers are intended to prevent injury or damage due to electric...
Description Optocouplers in Switching Power Supplies
From old datasheet system

File Size 53.16K  /  9 Page

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    AN392

STMicroelectronics
Part No. AN392
OCR Text ... market. with an analog ic, the designer is limited to a fixed function frozen inside the device. with a diac control, features like sensor feedback or enhanced motor drive cannot be easily implemented. with an mcu the designer can inclu...
Description Microcontrollers and TRIAC-based dimmers

File Size 120.53K  /  11 Page

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Part No. A54SX08AFBG144
OCR Text ...th ieee standard 1149.1 ? actel designer series design tools, supported by cadence, exemplar, ist, mentor graphics, model tech, synopsys, synplicity, and viewlogic design entry and simulation tools ? secure programming technology prevents r...
Description FPGA, 768 CLBS, 8000 GATES, PBGA144

File Size 205.69K  /  45 Page

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    ON Semi
Part No. MBRM120ET3_D ON0454
OCR Text designer'sTM Data Sheet Surface Mount Schottky Power Rectifier MBRM120ET3 SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES 20 VOLTS POWERMITE(R) Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with...
Description 1.0 AMPERES 20 VOLTS
From old datasheet system

File Size 131.74K  /  4 Page

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    MGY25N120D

MOTOROLA[Motorola, Inc]
Part No. MGY25N120D
OCR Text designer'sTM Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) is co-packaged with a soft recovery ultra-fast rectifier and uses ...
Description Insulated Gate Bipolar Transistor with Anti-Parallel Diode

File Size 256.06K  /  6 Page

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    MGY25N120D

ON Semiconductor
Part No. MGY25N120D
OCR Text designer'sTM Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) is co-packaged with a soft recovery ultra-fast rectifier and uses ...
Description Insulated Gate Bipolar Transistor with Anti-Parallel Diode

File Size 130.47K  /  6 Page

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